Ion implanting apparatus
    1.
    发明授权
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号:US07078714B2

    公开(公告)日:2006-07-18

    申请号:US10845209

    申请日:2004-05-14

    Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

    Abstract translation: 根据本发明的离子注入装置包括:用于产生包括所需离子种类的离子束20的离子源,并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36,用于选择性地导出 通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类,通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

    Ion implanting apparatus
    2.
    发明申请
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号:US20050253089A1

    公开(公告)日:2005-11-17

    申请号:US10845209

    申请日:2004-05-14

    Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

    Abstract translation: 根据本发明的离子注入装置包括:用于产生包括所需离子种类的离子束20的离子源,并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36,用于选择性地导出 通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类,通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

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