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    Solid-state imaging device and electronic device
    2.
    发明授权
    Solid-state imaging device and electronic device 有权
    固态成像装置和电子装置

    公开(公告)号：US07795655B2

    公开(公告)日：2010-09-14

    申请号：US11862369

    申请日：2007-09-27

    Applicant: Maki Sato ,  Susumu Ooki

    Inventor： Maki Sato ,  Susumu Ooki

    IPC: H01L31/103

    CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    Abstract: There is provided a solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.

    Abstract translation: 提供了一种固态成像装置，其包括具有以二维矩阵排列的多个像素的成像区域和检测来自像素的输出信号的外围电路。 每个像素的晶体管中的杂质浓度低于外围电路晶体管中的杂质浓度。 此外，像素中的浮动扩散部分下的半导体阱区域的杂质浓度被设定为低于在浮动扩散部分的后续阶段的晶体管部分下的半导体阱区域的杂质浓度。

    Solid-state imaging device and electronic device
    5.
    发明授权
    Solid-state imaging device and electronic device 有权
    固态成像装置和电子装置

    公开(公告)号：US08211733B2

    公开(公告)日：2012-07-03

    申请号：US12854627

    申请日：2010-08-11

    Applicant: Maki Sato ,  Susumu Ooki

    Inventor： Maki Sato ,  Susumu Ooki

    IPC: H01L21/00

    CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.

    Abstract translation: 一种固态成像装置，包括具有以二维矩阵排列的多个像素的成像区域和检测来自像素的输出信号的外围电路。 每个像素的晶体管中的杂质浓度低于外围电路晶体管中的杂质浓度。 此外，像素中的浮动扩散部分下方的半导体阱区域的杂质浓度被设定为低于在浮动扩散部分的后续阶段的晶体管部分下面的半导体阱区域的杂质浓度。

    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 有权
    固态成像装置和成像装置

    公开(公告)号：US20100245648A1

    公开(公告)日：2010-09-30

    申请号：US12728549

    申请日：2010-03-22

    Applicant: Hiroshi Tayanaka ,  Susumu Ooki ,  Junichi Furukawa ,  Fumiaki Okazaki

    Inventor： Hiroshi Tayanaka ,  Susumu Ooki ,  Junichi Furukawa ,  Fumiaki Okazaki

    IPC: H04N5/335

    CPC classification number: H01L31/0232 ,  H04N5/2254 ,  H04N5/37457

    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.

    Abstract translation: 成像装置包括具有两个或更多个共享浮动扩散的像素的基本单元。 成像装置还包括由基本单元中的两个或更多像素共享的并且布置在两个或更多个像素的外侧上的晶体管。 成像装置还包括光接收单元，其通过传送门连接到基本单元中的像素共享的浮动扩散。 在成像装置中，片上透镜基本上以规则的间隔布置。 此外，形成光波导，使得其在固态成像装置的表面中的位置位于从光接收单元的中心偏移到晶体管和光接收单元的内部的位置，并且 片内镜头内。

    SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE 有权
    固态成像装置和电子装置

    公开(公告)号：US20080142856A1

    公开(公告)日：2008-06-19

    申请号：US11862369

    申请日：2007-09-27

    Applicant: Maki Sato ,  Susumu Ooki

    Inventor： Maki Sato ,  Susumu Ooki

    IPC: H01L27/146 ,  H01L31/18

    CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    Abstract: There is provided a solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.

    Abstract translation: 提供了一种固态成像装置，其包括具有以二维矩阵排列的多个像素的成像区域和检测来自像素的输出信号的外围电路。 每个像素的晶体管中的杂质浓度低于外围电路晶体管中的杂质浓度。 此外，像素中的浮动扩散部分下方的半导体阱区域的杂质浓度被设定为低于在浮动扩散部分的后续阶段的晶体管部分下面的半导体阱区域的杂质浓度。

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