公开(公告)号：US08436406B2

公开(公告)日：2013-05-07

申请号：US12727469

申请日：2010-03-19

申请人： Mahito Shinohara ,  Shunsuke Inoue

发明人： Mahito Shinohara ,  Shunsuke Inoue

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656

摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

摘要翻译： 固态图像感测装置包括多个像素。 每个像素具有光电二极管，第一晶体管和第二晶体管。 光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。 第一和第二导电类型彼此相反。 第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。 第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。 在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

公开(公告)号：US08159010B2

公开(公告)日：2012-04-17

申请号：US12792943

申请日：2010-06-03

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14601 ,  H01L21/28525 ,  H01L23/53271 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.

摘要翻译： 本发明提供了一种固态图像拾取装置，其在黑暗状态下没有阴影，并且能够使动态范围和S / N高。 附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508a表示形成浮动扩散的N型高浓度区域，其也是漏极 转移MOS晶体管的区域。 附图标记508b表示与N型高浓度区域直接接触的多晶硅导出电极。 从表面入射的光通过没有金属第三层525的孔径进入光电二极管。 在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，以便在进入浮置之前反复多次以充分衰减 扩散部分，从而使得混叠非常小。

公开(公告)号：US07705381B2

公开(公告)日：2010-04-27

申请号：US12143941

申请日：2008-06-23

申请人： Mahito Shinohara ,  Shunsuke Inoue

发明人： Mahito Shinohara ,  Shunsuke Inoue

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656

摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

公开(公告)号：US07642581B2

公开(公告)日：2010-01-05

申请号：US12259350

申请日：2008-10-28

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H01L31/062

CPC分类号： H01L27/14612 ,  H01L27/14623

摘要： A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.

摘要翻译： 固态摄像装置具有像素，该像素包括根据入射光量产生电荷的光电二极管，浮动扩散部分，电荷转移晶体管，其将电荷从光电转换传递到浮动扩散部分 基于保持在所述浮动扩散部分中的所述电荷输出信号的读取电路和设置成在光电转换上覆盖电荷转移晶体管的栅电极的侧壁的遮光部件 部分侧。

公开(公告)号：US20080258190A1

公开(公告)日：2008-10-23

申请号：US12143941

申请日：2008-06-23

申请人： Mahito Shinohara ,  Shunsuke Inoue

发明人： Mahito Shinohara ,  Shunsuke Inoue

IPC分类号： H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656

摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

摘要翻译： 固态图像感测装置包括多个像素。 每个像素具有光电二极管，第一晶体管和第二晶体管。 光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。 第一和第二导电类型彼此相反。 第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。 第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。 在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

公开(公告)号：US20080230685A1

公开(公告)日：2008-09-25

申请号：US12111342

申请日：2008-04-29

申请人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

发明人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462

摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.

摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。

公开(公告)号：US07307300B2

公开(公告)日：2007-12-11

申请号：US11054316

申请日：2005-02-10

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14601 ,  H01L21/28525 ,  H01L23/53271 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficienly before entering into the floating diffusion section, thereby making the aliasing extremely small.

摘要翻译： 本发明提供了一种固态图像拾取装置，其在黑暗状态下没有阴影，并且能够使动态范围和S / N高。 附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508表示形成浮动扩散的N型高浓度区域，也表示为 漏极区域。 附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。 从表面入射的光通过没有金属第三层525的孔径进入光电二极管。 在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮置之前多次重复反射以充分衰减 扩散部分，从而使得混叠非常小。

公开(公告)号：US07215368B2

公开(公告)日：2007-05-08

申请号：US10406950

申请日：2003-04-03

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14647 ,  H01L27/14609

摘要： In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read out a photoelectric conversion signal of each diode to a floating diffusion.

摘要翻译： 在具有多个像素电路的光电转换装置中，在每个像素电路中与主电极连接到光电转换单元的电荷累积节点的读取晶体管在五极管区域中被操作，以便读出一个 每个二极管的光电转换信号到浮动扩散。

公开(公告)号：US20050259167A1

公开(公告)日：2005-11-24

申请号：US11130160

申请日：2005-05-17

申请人： Shunsuke Inoue ,  Shin Kikuchi

发明人： Shunsuke Inoue ,  Shin Kikuchi

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/347 ,  H04N5/357 ,  H04N5/374 ,  H04N5/217

CPC分类号： H04N5/378 ,  H04N5/343 ,  H04N5/347

摘要： In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.

摘要翻译： 在具有从多个像素添加信号的装置的固体摄像装置中，本发明实现了高S / N，并且实现了适用于静态图像拾取和运动图像拾取两者的固态图像拾取装置 。 固体摄像装置是固体摄像装置，其具有像素单元，具有二维排列的多个像素，并输出通过光电转换得到的像素信号，并具有第一读取模式 每个像素的像素信号，以及添加和读取多个像素信号的第二模式，具有用于在第一模式和第二模式中以不同增益执行读出的可变增益列放大器。 固态摄像装置具有分别输出来自一行排列的多个像素的输出信号的多条输出线，并且可变增益放大器中的至少一方与多条输出线连接。 使得在第二模式中的读出时的增益高于在第一模式下的读出时的增益。

公开(公告)号：US20050184322A1

公开(公告)日：2005-08-25

申请号：US11054316

申请日：2005-02-10

申请人： Shunsuke Inoue

发明人： Shunsuke Inoue

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L31/062

CPC分类号： H01L27/14601 ,  H01L21/28525 ,  H01L23/53271 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficienly before entering into the floating diffusion section, thereby making the aliasing extremely small.

摘要翻译： 本发明提供一种固态图像拾取装置，其在黑暗状态下不会阴影，并且能够使动态范围和S / N高。 附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508表示形成浮动扩散的N型高浓度区域，也表示为 漏极区域。 附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。 从表面入射的光通过没有金属第三层525的孔径进入光电二极管。 在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮动之前多次重复反射以充分衰减 扩散部分，从而使得混叠非常小。