公开(公告)号：US07305852B2

公开(公告)日：2007-12-11

申请号：US09863750

申请日：2001-05-23

申请人： Yoshihiko Gotoh ,  Shinichi Satoh ,  Masakazu Kudoh

发明人： Yoshihiko Gotoh ,  Shinichi Satoh ,  Masakazu Kudoh

IPC分类号： C03B19/09 ,  C03B15/18

CPC分类号： F23D14/32 ,  C03B17/04 ,  C03B17/06 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1407 ,  C03B19/1423 ,  C03B2207/06 ,  C03B2207/12 ,  C03B2207/14 ,  C03B2207/42 ,  C03B2207/54 ,  F23C2900/9901 ,  F23D14/22

摘要： The invention provides a method for manufacturing a large scale quartz glass slab ingot in a flame hydrolysis reaction in a furnace, including the steps of rotating the furnace, depositing a fused silica on a furnace bed, and extending the deposit outwardly by heating and rotation of the furnace, thereby a quartz glass slab ingot is obtained. A quartz glass burner is installed at the ceiling of the furnace, hydrogen gas supplied to the burner flows down along the tapered wall of the oxygen chamber and is ejected into the outer casing. Part of the hydrogen gas is deflected to the center of the burner and mixed with the oxygen just after the ejection from the oxygen gas nozzles. Thereby, the flame is formed smoothly and the thermal efficiency is improved. The flame becomes wide enough and the silica powder transported by the hydrogen gas is uniformly fused by the flame and heat capacity of the fused silica.

摘要翻译： 本发明提供了一种用于在炉中进行火焰水解反应的大型石英玻璃板坯的制造方法，包括以下步骤：使炉子旋转，将熔融二氧化硅沉积在炉床上，并通过加热和旋转来向外延伸沉积物 从而得到石英玻璃板坯锭。 石英玻璃燃烧器安装在炉顶上，供给燃烧器的氢气沿着氧气室的锥形壁向下流动，并被排出到外壳中。 氢气的一部分被偏转到燃烧器的中心并且刚刚从氧气喷嘴喷出之后与氧气混合。 由此，能够平稳地形成火焰，提高热效率。 火焰变得足够宽，由氢气输送的二氧化硅粉末通过熔融二氧化硅的火焰和热容均匀地熔合。

公开(公告)号：US06619548B1

公开(公告)日：2003-09-16

申请号：US09598702

申请日：2000-06-21

申请人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

发明人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

IPC分类号： G06K710

CPC分类号： G06K7/10851 ,  G06K7/10574 ,  G06K7/14 ,  G06K7/1486

摘要： A method of the invention reads a bar code based on bar-code data obtained by scanning the bar code with light. The method includes the steps of a) obtaining bar-code data, b) obtaining a sum of bar-data widths with respect to a predetermined number of bar data provided in at least one of a preceding portion and a following portion of the bar-code data, c) repeating the steps a) and b) once to obtain another sum, and d) making a comparison of the sum with another sum. The methods further includes a step of accepting the bar-code data as valid data when a result of the comparison satisfies a predetermined condition.

摘要翻译： 本发明的方法基于通过用光扫描条形码而获得的条形码数据来读取条形码。 该方法包括以下步骤：a）获得条形码数据，b）相对于在条形码数据的前一部分和后续部分中的至少一个中提供的预定数量的条形数据获得条形数据宽度之和， 代码数据，c）重复步骤a）和b）一次以获得另一个总和，以及d）对所述和与另一个和进行比较。 所述方法还包括当比较结果满足预定条件时接受条形码数据作为有效数据的步骤。

公开(公告)号：US06222178B1

公开(公告)日：2001-04-24

申请号：US09231841

申请日：1999-01-15

申请人： Hiroaki Kawai ,  Shinichi Satoh ,  Motohiko Itoh ,  Mitsuo Watanabe ,  Isao Iwaguchi ,  Ichiro Shinoda

发明人： Hiroaki Kawai ,  Shinichi Satoh ,  Motohiko Itoh ,  Mitsuo Watanabe ,  Isao Iwaguchi ,  Ichiro Shinoda

IPC分类号： H01J4014

CPC分类号： G06K7/10584

摘要： A proximity sensor receives light beams reflected from a goods. A proximity sensor control unit determines that the goods exists when a light quantity of the reflected light received by the proximity sensor exceeds a determination threshold value. The determination threshold value increases as elapsed time since the bar code was read last time becomes longer, and, as a result, a detection sensitivity decreases. A CPU restores a duty of irradiation of the laser beam back to 100% and resumes rotations of a motor for driving an operation optical system when the proximity sensor control unit determines that the goods exists.

摘要翻译： 接近传感器接收从商品反射的光束。 当接近传感器接收的反射光的光量超过确定阈值时，接近传感器控制单元确定商品存在。 判定阈值随着从上次读取条形码的时间变长而增加，结果检测灵敏度降低。 当接近传感器控制单元确定存在商品时，CPU将激光束照射的占空比恢复到100％，并恢复用于驱动操作光学系统的电动机的旋转。

公开(公告)号：US06189796B1

公开(公告)日：2001-02-20

申请号：US09356024

申请日：1999-07-16

申请人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

发明人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

IPC分类号： G06K710

CPC分类号： G06K7/10851 ,  G06K7/10574 ,  G06K7/14 ,  G06K7/1486

摘要： A method and apparatus for selectively reading a bar code in accordance with first and second scan patterns emitted by a scan unit. A button is manually operable by an operator for switching from the first scan pattern to a second scan pattern. A controller controls the scanning unit to switch from the first scan pattern to the second scan pattern, responsive to operation of the button by the operator and, a predetermined time after relative of the button, to switch from the second scan pattern to the first scan pattern.

摘要翻译： 一种用于根据由扫描单元发射的第一和第二扫描图案选择性地读取条形码的方法和装置。 按钮可由操作者手动操作，用于从第一扫描图案切换到第二扫描图案。 控制器控制扫描单元从第一扫描图案切换到第二扫描图案，响应于操作者按钮的操作，以及相对于按钮之后的预定时间，从第二扫描图案切换到第一扫描 模式。

公开(公告)号：US6145744A

公开(公告)日：2000-11-14

申请号：US356025

申请日：1999-07-16

申请人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

发明人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

IPC分类号： G06K7/00 ,  G06K7/10 ,  G06K7/14

CPC分类号： G06K7/10851 ,  G06K7/10574 ,  G06K7/14 ,  G06K7/1486

摘要： A method of the invention reads a bar code based on bar-code data obtained by scanning the bar code with light. The method includes the steps of a) obtaining bar-code data, b) obtaining a sum of bar-data widths with respect to a predetermined number of bar data provided in at least one of a preceding portion and a following portion of the bar-code data, c) repeating the steps a) and b) once to obtain another sum, and d) making a comparison of the sum with another sum. The methods further includes a step of accepting the bar-code data as valid data when a result of the comparison satisfies a predetermined condition.

公开(公告)号：US5930614A

公开(公告)日：1999-07-27

申请号：US765771

申请日：1991-09-26

申请人： Takahisa Eimori ,  Shinichi Satoh ,  Wataru Wakamiya ,  Hiroji Ozaki ,  Yoshinori Tanaka

发明人： Takahisa Eimori ,  Shinichi Satoh ,  Wataru Wakamiya ,  Hiroji Ozaki ,  Yoshinori Tanaka

IPC分类号： H01L21/76 ,  H01L21/765 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/765

摘要： A first conductor for a field shield and a first insulating film are sequentially formed in a predetermined shape on a major surface of a P-type semiconductor substrate through an insulating film. A third insulating film is formed over the semiconductor substrate so as to cover the first conductor and a second insulating film thereon. The third insulating film is anisotropically etched, so that a sidewall insulating film is formed on sidewalls of the first conductor. Second and third conductors respectively serving as gate electrodes of field effect transistors are formed through a fourth insulating film. n-type impurities are implanted into the major surface of the semiconductor substrate utilizing as masks the first insulating film, the sidewall oxide film, the second conductor and the third conductor and are diffused, to form impurity regions. Since the sidewall oxide film is thick, the impurity regions are not overlapped even by diffusion with a portion where the first conductor is projected on the semiconductor substrate. Thus, a threshold voltage of a field shield transistor comprising the first conductor and the impurity regions on both sides thereof is raised, so that isolation characteristics of the field shield is improved.

摘要翻译： 用于场屏蔽和第一绝缘膜的第一导体通过绝缘膜在P型半导体衬底的主表面上依次形成为预定形状。 在半导体衬底上形成第三绝缘膜，以覆盖第一导体和第二绝缘膜。 第三绝缘膜被各向异性地蚀刻，从而在第一导体的侧壁上形成侧壁绝缘膜。 分别用作场效晶体管的栅极的第二和第三导体通过第四绝缘膜形成。 利用第一绝缘膜，侧壁氧化物膜，第二导体和第三导体作为掩模将n型杂质注入到半导体衬底的主表面中，并扩散，形成杂质区。 由于侧壁氧化物膜厚，因此即使通过第一导体投射在半导体基板上的部分的扩散也不会使杂质区域重叠。 因此，包括第一导体和其两侧的杂质区域的场屏蔽晶体管的阈值电压升高，从而提高了场屏蔽的隔离特性。

公开(公告)号：US5650342A

公开(公告)日：1997-07-22

申请号：US968941

申请日：1992-10-30

申请人： Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori

发明人： Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/8234

CPC分类号： H01L29/66598 ,  H01L21/28061 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/6659

摘要： A field effect transistor comprises a semiconductor substrate having a main surface and a predetermined impurity concentration of a first conductivity type, impurity layers of a second conductivity type formed spaced apart at the main surface of the semiconductor substrate, and a shaped conductive layer serving as a gate electrode. The impurity layers constitute source.drain regions, and a region between the impurity layers defines a channel region in the main surface. The shaped conductive layer is formed on the channel region with an insulating film therebetween. The shaped conductive layer has an upper portion and a lower portion wherein the upper portion is longer than the lower portion and the length of the lower portion adjacent the insulating film is substantially equal to or shorter than the length of the channel region at the main surface. Additionally, the upper and lower portions of the shaped conductive layer are formed of the same base composition.

摘要翻译： 场效应晶体管包括具有第一导电类型的主表面和预定杂质浓度的半导体衬底，在半导体衬底的主表面上间隔开形成的第二导电类型的杂质层和用作 栅电极。 杂质层构成源极区域，并且杂质层之间的区域限定主表面中的沟道区域。 成形导电层在沟道区域之间形成有绝缘膜。 成形导电层具有上部和下部，其中上部比下部长，并且与绝缘膜相邻的下部的长度基本上等于或短于主表面处的沟道区的长度 。 此外，成形导电层的上部和下部由相同的基底组成形成。

公开(公告)号：US5521419A

公开(公告)日：1996-05-28

申请号：US327341

申请日：1994-10-21

申请人： Wataru Wakamiya ,  Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori ,  Yoshinori Tanaka

发明人： Wataru Wakamiya ,  Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori ,  Yoshinori Tanaka

IPC分类号： H01L21/76 ,  H01L21/8242 ,  H01L23/528 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L27/10852 ,  H01L23/5283 ,  H01L27/10808 ,  H01L2924/0002

摘要： A field shield isolating structure forms a structure for isolating elements of a semiconductor device. The field shield isolating structure includes a field shield gate insulating film and field shield electrode formed on the semiconductor substrate in separate processes to constitute a quasi-MOS transistor using impurity regions of adjacent MOS transistors. The film thickness of the field shield gate insulating film is set arbitrarily, the threshold voltage of the quasi-MOS transistor is set high, and then elements are insulated and isolated, so that the transistor is operated in the off state. The upper surface of the field shield electrode is also covered with the upper insulating film. The thicknesses of the upper insulating film and of the field shield gate insulating film is adjusted to have such values that prevent turning ON of the MOS transistor by the capacitance divided voltage. The voltage may be applied from upper conductive layers such as word lines formed above the upper insulating film.

摘要翻译： 场屏蔽隔离结构形成用于隔离半导体器件的元件的结构。 场屏蔽隔离结构包括在单独的工艺中形成在半导体衬底上的场屏蔽栅极绝缘膜和场屏蔽电极，以使用相邻MOS晶体管的杂质区构成准MOS晶体管。 场屏蔽栅极绝缘膜的膜厚度是任意设定的，准MOS晶体管的阈值电压被设定为高，然后元件被绝缘和隔离，使晶体管工作在关闭状态。 场屏蔽电极的上表面也被上绝缘膜覆盖。 将上绝缘膜和场屏蔽栅极绝缘膜的厚度调整为具有防止MOS晶体管导通的电容分压的值。 可以从形成在上绝缘膜上方的字线​​等上导电层施加电压。

公开(公告)号：US5358558A

公开(公告)日：1994-10-25

申请号：US87066

申请日：1993-07-07

申请人： Tomoya Yamamoto ,  Shoji Koike ,  Koromo Shirota ,  Shinichi Satoh

发明人： Tomoya Yamamoto ,  Shoji Koike ,  Koromo Shirota ,  Shinichi Satoh

IPC分类号： B41J2/01 ,  D06P5/30 ,  C09D11/02

CPC分类号： D06P5/30 ,  B41J2/01 ,  Y10T442/277

摘要： An ink-jet textile printing ink, comprising from 5% to 30% by weight of a reactive dye having at least one of a monochlorotriazine group and a vinyl sulfone group, and a water-based liquid medium, wherein said liquid medium comprises from 1% to 50% by weight of thiodiglycol and from 2% to 45% by weight of at least one organic solvent selected from a di-, tri-, or tetramer of oxyethylene, a di-, tri-, or tetramer of oxypropylene, and a mono- or di-C.sub.1 -C.sub.4 -alkyl ether of any of these di-, tri- or tetramers.

摘要翻译： 一种喷墨织物印刷油墨，其包含5重量％至30重量％的具有一氯三嗪基和乙烯基砜基团中的至少一种的活性染料和水基液体介质，其中所述液体介质包含1 至少50重量％的硫二甘醇和2重量％至45重量％的至少一种有机溶剂，其选自氧乙烯的二，三或四聚物，氧丙烯的二，三或四聚物，和 这些二，三或四聚体中的任一个的单或二C1-C4-烷基醚。

公开(公告)号：US5272100A

公开(公告)日：1993-12-21

申请号：US741693

申请日：1991-08-07

申请人： Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori

发明人： Shinichi Satoh ,  Hiroji Ozaki ,  Takahisa Eimori

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/335

CPC分类号： H01L29/66598 ,  H01L21/28061 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/6659

摘要： A field effect transistor comprises n type impurity regions formed spaced apart on a P type semiconductor substrate to be the source.multidot.drain regions and a T-shaped gate electrode formed on the region sandwiched by the n type impurity regions with an insulating film interposed therebetween, the gate electrode being formed of upper and lower two layers with the upper layer wider than the lower layer, wherein a n type channel region is formed between the source and the drain when the prescribed voltage is applied to the T-shaped gate electrode.

摘要翻译： 场效应晶体管包括在P型半导体衬底上间隔开形成为源极区的n型杂质区和形成在由n型杂质区夹在其间的绝缘膜的区域上形成的T形栅电极，栅极 电极由上层和下层两层形成，上层宽于下层，其中当规定的电压施加到T形栅电极时，在源极和漏极之间形成类型沟道区。