发明授权
- 专利标题： Field effect transistor with T-shaped gate electrode and manufacturing method therefor
- 专利标题（中）： 具有T形栅电极的场效应晶体管及其制造方法
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申请号： US741693申请日： 1991-08-07
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公开(公告)号： US5272100A公开(公告)日： 1993-12-21
- 发明人: Shinichi Satoh , Hiroji Ozaki , Takahisa Eimori
- 申请人： Shinichi Satoh , Hiroji Ozaki , Takahisa Eimori
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/423 ; H01L21/335
摘要：
A field effect transistor comprises n type impurity regions formed spaced apart on a P type semiconductor substrate to be the source.multidot.drain regions and a T-shaped gate electrode formed on the region sandwiched by the n type impurity regions with an insulating film interposed therebetween, the gate electrode being formed of upper and lower two layers with the upper layer wider than the lower layer, wherein a n type channel region is formed between the source and the drain when the prescribed voltage is applied to the T-shaped gate electrode.
公开/授权文献
- US4083640A Builders scaffolding 公开/授权日：1978-04-11
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