公开(公告)号：US20180202186A1

公开(公告)日：2018-07-19

申请号：US15792549

申请日：2017-10-24

Applicant: Shih-Hui Chang

Inventor： Shih-Hui Chang

IPC: E04H15/32

CPC classification number: E04H15/322 ,  F16G11/14

Abstract: A tent wind rope adjusting structure includes: an adjusting plate, having a plate body, with a front section and a rear section of the plate body provided each with a through hole, a side of the adjusting plate is provided with at least a hook, the hook is formed by cutting a notch at a side of the plate body, and having a hook opening and an indent portion; a wind rope, passing through the two through holes of the adjusting plate, with a tail end of the wind rope provided with a rope loop; and an elastic clip buckle, having a press-able rope clipping hole for the wind rope to pass through, to allow the elastic clip buckle to move between a rear section of the wind rope and the adjusting plate.

公开(公告)号：US06489193B1

公开(公告)日：2002-12-03

申请号：US10040442

申请日：2002-01-09

Applicant: Lung Chen ,  Teng-Feng Wang ,  Zen-Long Yang ,  Shih-Hui Chang ,  Yung-Shin Wang

Inventor： Lung Chen ,  Teng-Feng Wang ,  Zen-Long Yang ,  Shih-Hui Chang ,  Yung-Shin Wang

IPC: H01L218238

CPC classification number: H01L21/823481 ,  H01L21/762

Abstract: A novel process for isolating devices on a semiconductor substrate is disclosed. An isolation layer is first formed over the semiconductor substrate and patterned into at least two isolation mesas on the substrate. Next, a blanket semiconductor layer is formed over the substrate with a thickness sufficient to cover the isolation mesas. The semiconductor layer is subjected to planarization until the isolation mesas are exposed, thus resulting in a semiconductor region between the two isolation mesas to serve as an active region for semiconductor devices.

Abstract translation: 公开了一种在半导体衬底上隔离器件的新颖方法。 首先在半导体衬底上形成隔离层并将其图案化成衬底上的至少两个隔离台面。 接下来，在衬底上形成厚度足以覆盖隔离台面的覆盖半导体层。 对半导体层进行平坦化直到隔离台面露出，从而在两个隔离台面之间形成半导体区域，作为半导体器件的有源区。

公开(公告)号：US09145516B2

公开(公告)日：2015-09-29

申请号：US13188963

申请日：2011-07-22

Applicant: Yen Hsun Su ,  Shen-Lung Tu ,  Shih-Hui Chang ,  Wei-Min Zhang ,  Shih-Wen Tseng ,  Yun-Chorng Chang

Inventor： Yen Hsun Su ,  Shen-Lung Tu ,  Shih-Hui Chang ,  Wei-Min Zhang ,  Shih-Wen Tseng ,  Yun-Chorng Chang

IPC: C09K11/58 ,  C09K11/87 ,  A41G1/00

CPC classification number: C09K11/58 ,  A41G1/005 ,  C09K11/87

Abstract: A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.

Abstract translation: 提供了制备无机纳米材料的方法。 该方法包括提供包括多个金属离子的第一溶液的步骤; 将第一溶液与表面活性剂混合并加入还原剂以产生第二溶液，其中第二溶液产生从多个金属离子还原的多个金属原子; 并向第二溶液中加入氧化剂以氧化多个金属原子，从而产生多种金属氧化物并形成无机纳米材料。

公开(公告)号：US20120246761A1

公开(公告)日：2012-09-27

申请号：US13188963

申请日：2011-07-22

Applicant: Yen-Hsun Su ,  Shen-Long Tu ,  Shih-Hui Chang ,  Wei-Min Zhang

Inventor： Yen-Hsun Su ,  Shen-Long Tu ,  Shih-Hui Chang ,  Wei-Min Zhang

IPC: A01H5/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/58 ,  C09K11/60 ,  C09K11/54 ,  C09K11/57

CPC classification number: C09K11/58 ,  A41G1/005 ,  C09K11/87

Abstract: A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.

Abstract translation: 提供了制备无机纳米材料的方法。 该方法包括提供包括多个金属离子的第一溶液的步骤; 将第一溶液与表面活性剂混合并加入还原剂以产生第二溶液，其中第二溶液产生从多个金属离子还原的多个金属原子; 并向第二溶液中加入氧化剂以氧化多个金属原子，从而产生多种金属氧化物并形成无机纳米材料。

公开(公告)号：US06577926B1

公开(公告)日：2003-06-10

申请号：US09280508

申请日：1999-03-30

Applicant: Shih Hui Chang ,  Kuo-Hsien Cheng ,  Cheng Kun Lin ,  Wen Zen Chiu

Inventor： Shih Hui Chang ,  Kuo-Hsien Cheng ,  Cheng Kun Lin ,  Wen Zen Chiu

IPC: G05B2100

CPC classification number: G05B9/02

Abstract: Faults occurring in the operation of a rapid thermal process system are detected and dynamically controlled in-situ. A data set is generated which represents the power applied to heating elements which are spatially arranged in a plurality of zones. The data is converted to a sequence of fractions respectively representing the power applied to each zone relative to the total applied power. The fractions are sequentially arranged and a least squares straight line fit for the fractions is calculated. The slope of the calculated straight line fit is used in a statistical process control system to determine whether a fault has occurred, and to make appropriate corrections in process control parameters, such as the length of time the process is carried out.

Abstract translation: 在快速热处理系统的运行中发生的故障被现场检测和动态控制。 产生表示施加到空间上布置在多个区域中的加热元件的功率的数据组。 数据被转换成分数序列，分数表示施加到每个区域相对于总施加功率的功率。 计算分数，计算分数的最小二乘法直线拟合。 在统计过程控制系统中使用计算的直线拟合的斜率来确定是否发生故障，并对过程控制参数进行适当的校正，例如过程执行的时间长度。