公开(公告)号：US20110014782A1

公开(公告)日：2011-01-20

申请号：US12390433

申请日：2009-02-21

Applicant: Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

Inventor： Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

IPC: H01L21/20

CPC classification number: H01L21/0262 ,  C23C16/24 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/3266 ,  H01L21/02532 ,  H01L21/02595

Abstract: Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.

Abstract translation: 公开了一种在基板上生长微晶硅膜的方法。 该方法包括将基板设置在室中的步骤，对室进行抽真空和加热基板的步骤，将反应气体引入室内作为前体并将室内的压力保持在预定值的步骤， 在室中使用RF能量以解离反应气体以形成用于在衬底上生长微晶硅膜的等离子体。 反应气体包括SiH 4 / Ar混合物和H 2。 SiH4 / Ar混合物比H2的比例为1:1至1:20。

公开(公告)号：US20110041766A1

公开(公告)日：2011-02-24

申请号：US12732753

申请日：2010-03-26

Applicant: Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

Inventor： Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

IPC: C23C16/513

CPC classification number: H01J37/3266 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32357

Abstract: A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

Abstract translation: 等离子体源包括真空室，多个放电管，多个永磁体，多个RF天线和RF功率分配电路。 RF功率分配电路电耦合到RF电源和多个RF天线中的每一个。 多个RF天线中的每一个和RF电源之间的传输路径的长度相同，使得RF电源可以为每个放电管提供相同的RF功率。