公开(公告)号：US07821082B1

公开(公告)日：2010-10-26

申请号：US12431571

申请日：2009-04-28

Applicant: Kwang-Ming Lin ,  Shih-Chieh Pu ,  Shih-Chan Chen

Inventor： Kwang-Ming Lin ,  Shih-Chieh Pu ,  Shih-Chan Chen

IPC: H01L29/66

CPC classification number: H01L29/7835 ,  H01L21/76224 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368

Abstract: A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.

Abstract translation: 公开了横向扩散的金属氧化物半导体晶体管。 p型块体设置在基板上。 n型阱区设置在p型体中。 在p型体和n型阱区上设置多个场氧化物层。 栅极结构设置在p型体的一部分和多个场氧化物层中的一个上。 至少一个深沟槽隔离结构设置在p型体中并与n型阱区相邻。

公开(公告)号：US20100270615A1

公开(公告)日：2010-10-28

申请号：US12431571

申请日：2009-04-28

Applicant: Kwang-Ming Lin ,  Shih-Chieh Pu ,  Shih-Chan Chen

Inventor： Kwang-Ming Lin ,  Shih-Chieh Pu ,  Shih-Chan Chen

IPC: H01L29/78 ,  H01L21/762

CPC classification number: H01L29/7835 ,  H01L21/76224 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368

Abstract: A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.

Abstract translation: 公开了横向扩散的金属氧化物半导体晶体管。 p型块体设置在基板上。 n型阱区设置在p型体中。 在p型体和n型阱区上设置多个场氧化物层。 栅极结构设置在p型体的一部分和多个场氧化物层中的一个上。 至少一个深沟槽隔离结构设置在p型体中并与n型阱区相邻。