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    Radiation-assisted selective deposition of metal-containing cap layers
    4.
    发明授权
    Radiation-assisted selective deposition of metal-containing cap layers 有权
    含金属盖层的辐射辅助选择性沉积

    公开(公告)号：US08716132B2

    公开(公告)日：2014-05-06

    申请号：US12371411

    申请日：2009-02-13

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/76886 ,  C23C16/047 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/02074 ,  H01L21/28562 ,  H01L21/3205 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883

    摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

    摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。 在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖 通过电磁辐射促进了Cu金属表面上的层形成。 在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化衬底。

    Diffusion barrier and adhesion layer for an interconnect structure
    5.
    发明授权
    Diffusion barrier and adhesion layer for an interconnect structure 有权
    用于互连结构的扩散阻挡层和粘合层

    公开(公告)号：US08058728B2

    公开(公告)日：2011-11-15

    申请号：US12242416

    申请日：2008-09-30

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76873

    摘要： An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.

    摘要翻译： 提供互连结构。 所述互连结构包括形成在电介质材料内的互连开口，介电材料上的扩散阻挡层，其中所述扩散阻挡层包含来自在钴金属层的至少一部分上形成的钴（Co）金属之间的热反应的化合物 电介质材料和介电反应物元件。 所述互连结构还包括所述互连开口中的氮化钴粘合层和所述互连开口中的Cu金属填充物，其中所述扩散阻挡层和所述钴酸钾粘附层围绕所述互连开口内的所述Cu金属填充物。

    Electrostatic chuck device
    6.
    发明授权
    Electrostatic chuck device 有权

    公开(公告)号：US07848077B2

    公开(公告)日：2010-12-07

    申请号：US12588809

    申请日：2009-10-28

    申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    IPC分类号： H01T23/00

    CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

    RADIATION-ASSISTED SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS
    7.
    发明申请
    RADIATION-ASSISTED SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS 有权
    含金属夹层的辐射辅助选择性沉积

    公开(公告)号：US20100210108A1

    公开(公告)日：2010-08-19

    申请号：US12371411

    申请日：2009-02-13

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/76886 ,  C23C16/047 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/02074 ,  H01L21/28562 ,  H01L21/3205 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883

    摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

    摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。 在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖 通过电磁辐射促进了Cu金属表面上的层形成。 在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化的衬底。

    METHOD OF FORMING A COBALT METAL NITRIDE BARRIER FILM
    9.
    发明申请
    METHOD OF FORMING A COBALT METAL NITRIDE BARRIER FILM 审中-公开
    形成钴金属氮化物膜的方法

    公开(公告)号：US20090246952A1

    公开(公告)日：2009-10-01

    申请号：US12058595

    申请日：2008-03-28

    申请人： Tadahiro ISHIZAKA ,  Shigeru Mizuno

    发明人： Tadahiro ISHIZAKA ,  Shigeru Mizuno

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76849 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method is provided for forming a cobalt metal nitride barrier film on a substrate for semiconductor devices. According to one embodiment of the invention, the method includes depositing a plurality of metal nitride layers on the substrate, and depositing a cobalt layer between each of the plurality of metal nitride layers. According to another embodiment of the invention, the method includes simultaneously exposing the substrate to a metal nitride precursor or a metal precursor, a cobalt precursor, and a reducing gas, nitriding gas, or a combination thereof. Embodiments for integrating a cobalt metal nitride barrier film into semiconductor devices are described.

    摘要翻译： 提供了一种在半导体器件用基板上形成钴金属氮化物阻挡膜的方法。 根据本发明的一个实施例，该方法包括在衬底上沉积多个金属氮化物层，以及在多个金属氮化物层之间沉积钴层。 根据本发明的另一个实施例，该方法包括同时将衬底暴露于金属氮化物前体或金属前体，钴前体和还原气体，氮化气体或其组合。 描述了将钴金属氮化物阻挡膜集成到半导体器件中的实施例。