公开(公告)号：US07799684B1

公开(公告)日：2010-09-21

申请号：US11682175

申请日：2007-03-05

申请人： Jonathan Reid ,  Seyang Park ,  Seshasayee Varadarajan ,  Natalia Doubina

发明人： Jonathan Reid ,  Seyang Park ,  Seshasayee Varadarajan ,  Natalia Doubina

IPC分类号： H01L21/44

CPC分类号： H01L21/76873 ,  C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76864 ,  H01L21/76877

摘要： A two-step semiconductor electroplating process deposits copper onto wafers coated with a semi-noble metal in manner that is uniform across the wafer and free of voids. A plating bath nucleates copper uniformly and conformably at a high density in a very thin film. A second bath fills the features. A unique pulsed waveform enhances the nucleation density and reduces resistivity of the very thin film deposited in the nucleation operation. The process produces a thinner and conformal copper seed film than traditional PVD copper seed processes.

摘要翻译： 两步半导体电镀工艺将铜沉积在半贵金属涂层的晶片上，在晶片上均匀且无空隙。 电镀槽在非常薄的膜中以高密度均匀且顺应地使铜成核。 第二个浴缸充满了功能。 独特的脉冲波形增强了成核密度并降低了在成核操作中沉积的非常薄的薄膜的电阻率。 该方法产生比传统的PVD铜种子工艺更薄和保形的铜籽膜。

公开(公告)号：US07405157B1

公开(公告)日：2008-07-29

申请号：US11071135

申请日：2005-03-02

申请人： Jon Reid ,  Seyang Park

发明人： Jon Reid ,  Seyang Park

IPC分类号： H01L21/44

CPC分类号： C25D7/12 ,  C25D5/18 ,  C25D5/34 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

摘要： Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.

摘要翻译： 提供了用于在工件上电化学沉积铜的方法。 一种方法包括沉积覆盖工件的具有表面的阻挡层并使阻挡层表面经受适于促进铜在阻挡层上沉积的表面处理的步骤。 然后将铜电化学沉积在覆盖阻挡层上。

公开(公告)号：US08308931B2

公开(公告)日：2012-11-13

申请号：US12291356

申请日：2008-11-07

申请人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breling ,  Glenn Ibarreta ,  Steven Mayer

发明人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breling ,  Glenn Ibarreta ,  Steven Mayer

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D3/38

CPC分类号： C25D17/008 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US20100032310A1

公开(公告)日：2010-02-11

申请号：US12291356

申请日：2008-11-07

申请人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breiling ,  Glenn Ibarreta ,  Steven Mayer

发明人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breiling ,  Glenn Ibarreta ,  Steven Mayer

IPC分类号： C25D3/00 ,  C25D17/00

CPC分类号： C25D17/008 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US07442267B1

公开(公告)日：2008-10-28

申请号：US10999838

申请日：2004-11-29

申请人： Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

发明人： Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

IPC分类号： C22F1/14

CPC分类号： C22F1/14 ,  C23C16/18 ,  C23C16/56 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874

摘要： A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.

摘要翻译： 形成含钌的薄膜。 通常，含钌薄膜的厚度在约1nm至20nm的范围内。 含钌的薄膜在无氧气氛中，例如在N 2 O 2形成气体中，在约100℃至500℃的温度范围内退火，以便 总时间约10秒至1000秒。 此后，通过电镀或化学镀将铜或其它金属沉积到退火的含钌薄膜上。 在一些实施方案中，含钌的薄膜也通过UV辐射处理。