摘要:
A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
摘要:
An exemplary embodiment of the present invention relates to a manufacturing method of a flow passage network and a flow passage network for minimizing energy loss occurring during fluid flow, and there are effects in which flow loss is reduced during fluid transport and the energy efficiency of flow passages increases by optimizing geometric factors of flow passages on the basis of biomimetic techniques and theoretical formulae of fluid mechanics. Further, it is effective in manufacturing microfluidics in which laminar flow with a low Reynolds number is dominant.
摘要:
Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes.
摘要:
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
摘要:
Provided is a substrate structure for a color filter and a color filter having the same. The substrate structure for color filter includes: a transparent substrate on which a plurality of pixels are defined by a black matrix; and an ink-philic pattern which is formed in a predetermined pattern on a surface of the substrate.
摘要:
This invention relates to tacrolimus injection comprising tacrolimus as an active ingredient, macrogol 15 hydroxystearate as a surfactant and a non-aqueous solvent.
摘要:
A simple, inexpensive and highly efficient fuel cell has boundary structures made of a photo-sensitive material in combination with selective patterning. Printed circuit board (PCB) fabrication techniques combine boundary structures with two and three dimensional electrical flow path. Photo-sensitive material and PCB fabrication techniques are alternately or combined utilized for making micro-channel structures or micro stitch structures for substantially reducing dead zones of the diffusion layer while keeping fluid flow resistance to a minimum. The fuel cell assembly is free of mechanical clamping elements. Adhesives that may be conductively contaminated and/or fiber-reinforced provide mechanical and eventual electrical connections, and sealing within the assembly. Mechanically supporting backing layers are pre-fabricated with a natural bend defined in combination with the backing layers' elasticity to eliminate massive support plates and assist the adhesive bonding. Proton insulation between adjacent and electrically linked in-plane cell elements is provided by structural insulation within the central membrane.
摘要:
Provided is an electro-osmosis dehydrator, which includes a sludge supplying part disposed in a central upper portion thereof, and including a rotating part and two rollers disposed under the rotating part, a drum disposed under the sludge supplying part to receive sludge, and having a cylindrical shape rotating about an axis thereof, wherein an inner circumference of the drum is charged negatively or positively by direct current power, a caterpillar part spaced a certain distance from the drum, and moving along an endless track, wherein the caterpillar part includes a power applying part charged with polarity opposite to that of the drum by direct current power, a filtering fabric disposed under the power applying part, a caterpillar disposed under the filtering fabric, and including a plurality of holes, a vinyl part disposed between the filtering fabric and the caterpillar to prevent the sludge from passing through the caterpillar, and a chain disposed under the caterpillar, and a plurality of idle sprocket parts disposed on the inside of the caterpillar part, and engaging with the chain to drive the caterpillar part. A filtering fabric is removed from the space between positive and negative electrodes so as to decrease the gap therebetween, thereby reducing electricity consumption.
摘要:
A solar cell includes a substrate, a doped pattern, a contact layer, and an electrode. The substrate includes a first surface onto which sunlight is incident and a second surface facing the first surface. The doped pattern is formed on the second surface of the substrate and the contact layer is formed on the doped pattern. The electrode is formed on the contact layer and is electrically connected to the doped pattern. Accordingly, a contact resistance between the substrate and the electrode may be decreased, so that the doped pattern and the electrode may be uniformly formed and a power efficiency of the solar cell may be improved.
摘要:
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.