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1.发明授权Resist underlayer film forming composition and method for forming resist pattern using the same 有权抗蚀剂下层膜形成组合物和使用其形成抗蚀剂图案的方法公开(公告)号：US08962234B2
公开(公告)日：2015-02-24
申请号：US14003480
申请日：2012-03-08
申请人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
发明人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
CPC分类号： G03F7/09 , C08G59/1455 , C08G59/4223 , G03F7/11 , G03F7/38
摘要： A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：在聚合物链的末端包含下式（1）结构的聚合物; 交联剂; 促进交联反应的化合物; 和有机溶剂：（其中，R 1，R 2和R 3各自独立地为氢原子，碳原子数为1〜13的直链或支链烃基或羟基; R1，R2和 R3是烃基; m和n各自独立地为0或1;当n为1时，聚合物的主链与亚甲基结合，当n为0时，与-O - 表示的基团键合。
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2.发明授权Method and apparatus for detecting disparity of cyclic length of printed patterns 失效用于检测印刷图案循环长度差异的方法和装置
公开(公告)号：US5060281A
公开(公告)日：1991-10-22
申请号：US658450
申请日：1991-02-22
申请人： Ryuji Ohnishi
发明人： Ryuji Ohnishi
IPC分类号： G01B11/02 , B41F33/00 , G01N21/956 , G06T1/00 , G06T7/00
CPC分类号： G06T7/0006 , B41F33/0036 , G01N21/956 , G06K9/036 , G01N2021/8896 , G06T2207/10016 , G06T2207/30144
摘要： A method of detecting a disparity in a cyclic length of a printed pattern includes the steps of scanning a to-be-checked sheet on which predetermined patterns are cyclically printed in the longitudinal direction by an electronic camera to obtain image data corresponding to a pattern, extracting outline data representing an outline of the pattern from the image data, writing the outline data extracted in the extraction step into a memory with a predetermined cycle in accordance with travel position data of the to-be-checked sheet, reading out the outline data, and comparing first outline data for one cycle read out from the memory and second outline data which is read out after the first outline data is read out. Disparity of a cyclic length of the pattern is detected based on a correlation between the first and second outline data, e.g., a coincidence or noncoincidence therebetween, in accordance with the comparison result in the comparison step.
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3.发明申请RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权抗静电膜形成组合物，以及使用其形成电阻图案的方法公开(公告)号：US20130230809A1
公开(公告)日：2013-09-05
申请号：US13884132
申请日：2011-11-11
摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.
摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。
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4.发明授权Resist underlayer film-forming composition for EUV lithography containing condensation polymer 有权用于含有缩聚物的EUV光刻的抗蚀下层成膜组合物公开(公告)号：US09240327B2
公开(公告)日：2016-01-19
申请号：US14236719
申请日：2012-07-31
IPC分类号： G03F7/11 , H01L21/308 , H01L21/027 , C08G73/06 , G03F7/09
CPC分类号： H01L21/3081 , C08G73/06 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0274 , H01L21/3086
摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。
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5.发明申请RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 有权抗静电膜形成组合物和使用其形成电阻图案的方法公开(公告)号：US20140004465A1
公开(公告)日：2014-01-02
申请号：US14003480
申请日：2012-03-08
申请人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
发明人： Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
CPC分类号： G03F7/09 , C08G59/1455 , C08G59/4223 , G03F7/11 , G03F7/38
摘要： A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：在聚合物链的末端包含下式（1）结构的聚合物; 交联剂; 促进交联反应的化合物; 和有机溶剂：（其中，R 1，R 2和R 3各自独立地为氢原子，碳原子数为1〜13的直链或支链烃基或羟基; R1，R2和 R3是烃基; m和n各自独立地为0或1;当n为1时，聚合物的主链与亚甲基结合，当n为0时，与-O - 表示的基团键合。
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6.发明申请RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER 有权用于含有凝聚聚合物的EUV光刻胶的膜下膜成膜组合物公开(公告)号：US20140170567A1
公开(公告)日：2014-06-19
申请号：US14236719
申请日：2012-07-31
IPC分类号： H01L21/308
CPC分类号： H01L21/3081 , C08G73/06 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0274 , H01L21/3086
摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。
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7.发明授权Resist underlayer film forming composition, and method for forming resist pattern using the same 有权抗蚀剂下层膜形成组合物，以及使用其形成抗蚀剂图案的方法公开(公告)号：US08722840B2
公开(公告)日：2014-05-13
申请号：US13884132
申请日：2011-11-11
摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.
摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。
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8.发明授权
公开(公告)号：US4975971A
公开(公告)日：1990-12-04
申请号：US208097
申请日：1988-06-17
申请人： Ryuji Ohnishi
发明人： Ryuji Ohnishi
IPC分类号： G01N21/88 , B41F33/00 , G01N21/89 , G01N21/892 , G01N21/956 , G06T7/00
CPC分类号： G06T7/0004 , B41F33/0036 , G01N21/956 , G01N2021/8896 , G06T2207/30124
摘要： A method of detecting a significant difference of a to-be-checked sheet includes the steps of: scanning a traveling to-be-checked sheet by a camera in the widthwise direction to obtain image data, extracting an outline of an image and an outline of a defect on the to-be-checked sheet from the image data, sequentially writing the outline data extracted in the outline extraction step in a memory with a predetermined cycle in accordance with travel position data and simultaneously reading out the outline data, comparing outline pattern data for an immediately preceding cycle as outline mask data with the latest outline pattern data obtained in a cycle following the immediately preceding cycle, and detecting a significant difference between the outline mask data and the latest outline pattern data in accordance with the comparison result obtained in the comparison step.
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