知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

24 records (took 0.018 seconds)

    Systems For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw
    1.
    发明申请
    Systems For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw 审中-公开
    用于控制在线锯切片的表面轮廓的系统

    公开(公告)号：US20130144420A1

    公开(公告)日：2013-06-06

    申请号：US13309243

    申请日：2011-12-01

    Applicant: Carlo Zavattari ,  Ferdinando Severico ,  Sumeet S. Bhagavat ,  Gabriele Vercelloni ,  Roland R. Vandamme

    Inventor： Carlo Zavattari ,  Ferdinando Severico ,  Sumeet S. Bhagavat ,  Gabriele Vercelloni ,  Roland R. Vandamme

    IPC: G05D23/19 ,  G06F19/00 ,  G05D7/06 ,  B28D5/00

    CPC classification number: B28D5/0064 ,  B28D5/045 ,  G05D23/1917

    Abstract: Systems are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

    Abstract translation: 公开了用于控制在线锯机中切割的晶片的表面轮廓的系统。 本文所述的系统和方法通常可操作以通过控制晶片的形状来改变从晶锭切片的晶片的纳米拓扑学。 晶片的形状通过改变流体连通的温度控制流体的温度和/或流速来改变，所述温度控制流体与支撑导线器的导线器的轴承保持流体连通。 可以使用不同的反馈系统来确定产生具有期望形状和/或纳米拓扑的晶片所需的流体的温度。

    Semiconductor And Solar Wafers And Method For Processing Same
    2.
    发明申请
    Semiconductor And Solar Wafers And Method For Processing Same 审中-公开
    半导体和太阳能晶片及其加工方法相同

    公开(公告)号：US20120028439A1

    公开(公告)日：2012-02-02

    申请号：US12847007

    申请日：2010-07-30

    Applicant: Guoqiang David Zhang ,  Roland R. Vandamme

    Inventor： Guoqiang David Zhang ,  Roland R. Vandamme

    IPC: H01L21/762 ,  H01L21/304

    CPC classification number: H01L21/76256

    Abstract: A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer.

    Abstract translation: 一种在衬底晶片和活性晶片之间制造包括衬底晶片，活性晶片和氧化物层的绝缘体上硅结构的方法。 该方法包括对结构进行热处理，晶片的梯形研磨边缘以及研磨晶片的表面的步骤。

    Hydrostatic Pad Pressure Modulation in a Simultaneous Double Side Wafer Grinder
    3.
    发明申请
    Hydrostatic Pad Pressure Modulation in a Simultaneous Double Side Wafer Grinder 有权
    同时双面晶圆磨床中的静水压力调节

    公开(公告)号：US20110237160A1

    公开(公告)日：2011-09-29

    申请号：US13049536

    申请日：2011-03-16

    Applicant: Sumeet S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    Inventor： Sumeet S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    IPC: B24B51/00

    CPC classification number: B24B9/148 ,  B24B37/042 ,  B24B37/08 ,  B24B37/28 ,  B24B49/00 ,  H01L21/78

    Abstract: Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.

    Abstract translation: 公开了用于调节具有一对砂轮的双面晶圆研磨机中的静水压力的系统和方法。 系统和方法使用处理器来测量由砂轮吸取的电流量。 模式检测软件用于基于测量的电流来预测磨削阶段。 在每个阶段通过流量控制阀改变静水压力，以改变施加到晶片的夹紧压力，从而改善加工晶片中的纳米拓扑。

    Method For Assessing Workpiece Nanotopology Using A Double Side Wafer Grinder
    5.
    发明申请
    Method For Assessing Workpiece Nanotopology Using A Double Side Wafer Grinder 有权
    使用双面晶圆磨床评估工件纳米学的方法

    公开(公告)号：US20100087123A1

    公开(公告)日：2010-04-08

    申请号：US12631929

    申请日：2009-12-07

    Applicant: Roland R. Vandamme ,  Milind S. Bhagavat

    Inventor： Roland R. Vandamme ,  Milind S. Bhagavat

    IPC: B24B49/04 ,  B24B7/17

    CPC classification number: B24B37/28 ,  B24B7/228 ,  B24B49/02

    Abstract: A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.

    Abstract translation: 使用将晶片保持在具有一对砂轮的平面中的类型的双面研磨机和一对静压垫来处理半导体晶片的方法。 该方法包括测量晶片与至少一个传感器之间的距离并使用所测量的距离来确定晶片纳米拓扑。 确定包括使用处理器基于测量的距离来执行晶片的有限元结构分析。

    Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
    7.
    发明授权
    Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder 有权
    同时双面晶圆研磨机中的静压垫压力调制

    公开(公告)号：US08712575B2

    公开(公告)日：2014-04-29

    申请号：US13049536

    申请日：2011-03-16

    Applicant: Sumeet S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    Inventor： Sumeet S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    IPC: B24B1/00 ,  H01L21/00 ,  B24B9/14 ,  H01L21/78 ,  B24B37/04

    CPC classification number: B24B9/148 ,  B24B37/042 ,  B24B37/08 ,  B24B37/28 ,  B24B49/00 ,  H01L21/78

    Abstract: Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.

    Abstract translation: 公开了用于调节具有一对砂轮的双面晶圆研磨机中的静水压力的系统和方法。 系统和方法使用处理器来测量由砂轮吸取的电流量。 模式检测软件用于基于测量的电流来预测磨削阶段。 在每个阶段通过流量控制阀改变静水压力，以改变施加到晶片的夹紧压力，从而改善加工晶片中的纳米拓扑。

    Methods For Controlling Displacement Of Bearings In A Wire Saw
    8.
    发明申请
    Methods For Controlling Displacement Of Bearings In A Wire Saw 审中-公开
    控制线锯中轴承位移的方法

    公开(公告)号：US20130139801A1

    公开(公告)日：2013-06-06

    申请号：US13309270

    申请日：2011-12-01

    Applicant: Carlo Zavattari ,  Ferdinando Severico ,  Sumeet S. Bhagavat ,  Gabriele Vercelloni ,  Roland R. Vandamme

    Inventor： Carlo Zavattari ,  Ferdinando Severico ,  Sumeet S. Bhagavat ,  Gabriele Vercelloni ,  Roland R. Vandamme

    IPC: B28D5/00 ,  B28D1/10

    CPC classification number: B28D5/045 ,  B28D5/0064

    Abstract: Methods are disclosed for controlling the displacement of bearings in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling displacement of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

    Abstract translation: 公开了用于控制线锯机中的轴承的位移的方法。 本文所述的系统和方法通常可操作以通过控制晶片的形状来改变从晶锭切片的晶片的纳米拓扑学。 通过改变与支撑导线器的导轨的轴承流体连通的温度控制流体的温度和/或流速来控制线锯中的轴承的位移来改变晶片的形状。 可以使用不同的反馈系统来确定产生具有期望形状和/或纳米拓扑的晶片所需的流体的温度。

    Double side wafer grinder and methods for assessing workpiece nanotopology
    10.
    发明授权
    Double side wafer grinder and methods for assessing workpiece nanotopology 有权
    双面晶圆研磨机和评估工件纳米拓扑学的方法

    公开(公告)号：US07601049B2

    公开(公告)日：2009-10-13

    申请号：US11617433

    申请日：2006-12-28

    Applicant: Sumeet S. Bhagavat ,  Milind S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    Inventor： Sumeet S. Bhagavat ,  Milind S. Bhagavat ,  Roland R. Vandamme ,  Tomomi Komura

    IPC: B24B49/00

    CPC classification number: B24B37/28 ,  B24B7/228 ,  B24B49/02

    Abstract: A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.

    Abstract translation: 双面研磨机包括一对砂轮和一对静压垫，其可操作以保持平坦工件（例如，半导体晶片），使得工件的一部分位于砂轮之间并且部分工件位于静水压 垫 至少一个传感器测量工件和相应传感器之间的距离，用于评估工件的纳米拓扑学。 在本发明的方法中，在研磨期间测量与工件的距离，并用于评估工件的纳米拓扑学。 例如，可以使用传感器数据来执行工件的有限元结构分析以导出至少一个边界条件。 纳米技术评估可以在从研磨机上取出工件之前开始，提供快速的纳米拓扑反馈。 可以使用空间滤波器来进一步处理后预测工件的可能纳米拓扑。

Patent Agency Ranking