公开(公告)号：US4268538A

公开(公告)日：1981-05-19

申请号：US24989

申请日：1979-03-29

申请人： Monte M. Toole ,  Raphael Klein

发明人： Monte M. Toole ,  Raphael Klein

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： C30B29/06 ,  C30B33/005 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.

摘要翻译： 在用于半导体工业的硅晶片或硅涂覆的晶片或其它半导体上生长氧化物的装置和方法，其中氧化物生长在反应室内的高压和高温条件下通过将保持在连续流动状态的气体氧化成 并通过房间。

公开(公告)号：US4247862A

公开(公告)日：1981-01-27

申请号：US922225

申请日：1978-07-05

申请人： Raphael Klein

发明人： Raphael Klein

IPC分类号： H01L21/265 ,  H01L23/556 ,  H01L27/108 ,  H01L27/04

CPC分类号： H01L21/26513 ,  H01L23/556 ,  H01L27/108 ,  H01L2924/0002 ,  Y10S257/921 ,  Y10S438/953

摘要： A structure and method for preventing minority carriers caused by an alpha particle, or the like, from drifting into storage regions and causing a false data bit. In a high density MOS circuit, a single alpha particle including one originating within the substrate or circuit package can generate enough carriers to give a false data bit. A minority carrier reflective barrier is employed to prevent substantial numbers of minority carriers from drifting into the active layer. In the presently preferred embodiment, this barrier is formed by ion implanting the upper surface of the substrate.

摘要翻译： 用于防止由α粒子等引起的少数载体的结构和方法漂移到存储区域并导致伪数据位。 在高密度MOS电路中，包括源于衬底或电路封装的单个α粒子可以产生足够的载流子以给出假数据位。 采用少数载流子反射屏障来防止大量少数载流子漂移到活性层中。 在目前优选的实施例中，通过离子注入衬底的上表面形成该阻挡层。

公开(公告)号：US4167915A

公开(公告)日：1979-09-18

申请号：US775963

申请日：1977-03-09

申请人： Monte M. Toole ,  Raphael Klein

发明人： Monte M. Toole ,  Raphael Klein

IPC分类号： H01L21/31 ,  C30B33/00 ,  H01L21/316 ,  C23C13/12

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.

摘要翻译： 在用于半导体工业的硅晶片或硅涂覆的晶片或其它半导体上生长氧化物的装置和方法，其中氧化物生长在反应室内的高压和高温条件下通过将保持在连续流动状态的气体氧化成 并通过房间。

公开(公告)号：US06673014B2

公开(公告)日：2004-01-06

申请号：US09972819

申请日：2001-10-05

申请人： Avner Pierre Badehi ,  Raphael Klein ,  Arieh Glazer

发明人： Avner Pierre Badehi ,  Raphael Klein ,  Arieh Glazer

IPC分类号： A61B316

CPC分类号： A61B8/10 ,  A61B3/165

摘要： Noninvasive methods and apparatuses measuring the intraocular pressure (IOP) of the eye using vibratory excitation are disclosed. Prior art methods teaches that the natural frequencies of the eye vary as a function of the IOP, with each natural frequency being zero at zero IOP. The present invention recognizes that the eye has different and separate classes of natural frequencies that vary as function of the IOP, which have non-zero values for a zero value of IOP, and which have curves that extrapolate to negative IOPs to obtain zero values of frequency. Preferred methods and apparatuses of the present invention measure a first natural frequency of this class at an unknown IOP value, and thereafter compare it to one or more known values of the first natural frequency measured at corresponding known IOPs to estimate value of the unknown IOP. Preferred embodiments include measuring one or more additional natural frequencies.

摘要翻译： 公开了使用振动激励测量眼睛的眼内压（IOP）的无创方法和装置。 现有技术的方法教导了眼睛的固有频率作为IOP的函数而变化，每个固有频率在零IOP时为零。 本发明认识到，眼睛具有不同且分离的固有频率的类别，其随着IOP的功能而变化，IOP的零值具有非零值，并且具有外推到负IOP的曲线，以获得零值 频率。 本发明的优选方法和装置以未知IOP值测量该类的第一固有频率，然后将其与在对应的已知IOP测量的第一固有频率的一个或多个已知值进行比较以估计未知IOP的值。 优选实施例包括测量一个或多个另外的固有频率。