Abstract:
A light emitting element driver composed of two transistors, one ground resistor, one inductance and one capacitor is disclosed, and it can drive a LED with a supplied voltage as low as about 0.92 V.
Abstract:
The present invention provides a method for measuring both magnetic and electric fields of a DUT via an electro-optic probing technique at the same time. Also, the present invention provides a method for measuring both electric and magnetic fields via a magneto-optic probing technique simultaneously. The method utilizes the modulation of the position of a probe to measure the electric and magnetic field signals. The DC and AC components of the modulated electric (or magnetic) field signals can be obtained by means of a low pass filter and a lock-in amplifier, respectively. Through a simple calculation, the electric and magnetic field can be obtained simultaneously.
Abstract:
A sensitivity adjusting equipment applied to a photoelectric smoke detector is provided. The photoelectric smoke detector includes a luminous component for providing an input light and a detecting component for receiving an even output light. The sensitivity adjusting equipment includes a light-scattering device having a scattering component and an adjustable hole for scattering the input light evenly and adjusting an intensity of the input light so as to output the even output light to the detecting component. The sensitivity adjusting equipment also includes a movable platform having a first brace connected to the photoelectric smoke detector and a supporting base having a second brace connected to the light-scattering device. The movable platform is moved to make the photoelectric smoke detector and the light-scattering device combined to adjust the sensitivity of the photoelectric smoke detector.
Abstract:
A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate null(Ba,Sr)TiO3null film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.