公开(公告)号：US20010029053A1

公开(公告)日：2001-10-11

申请号：US09884028

申请日：2001-06-20

Applicant: Precision Instrument Development Center, National Science Council

Inventor： Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

IPC: H01L021/00 ,  H01L021/8242

CPC classification number: H01L28/56 ,  C23C14/088 ,  H01L28/60 ,  H01L28/75

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate null(Ba,Sr)TiO3null film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.