公开(公告)号：US5091641A

公开(公告)日：1992-02-25

申请号：US619634

申请日：1990-11-27

申请人： Pieter W. G. Duijves

发明人： Pieter W. G. Duijves

IPC分类号： H01L31/10 ,  H01L31/02 ,  H03F3/08 ,  H04B10/158

CPC分类号： H04B10/6973 ,  H01L31/02019 ,  H03F3/08 ,  H04B10/6911

摘要： Optoelectric front-end comprising a photodiode which is not grounded and which drives a bipolar transistor acting as a feedback amplifier between the base and the emitter thereof, so that the d.c. arrangement of the transistor will cause no further noise to develop.

公开(公告)号：US4912431A

公开(公告)日：1990-03-27

申请号：US335011

申请日：1989-04-07

申请人： Pieter W. G. Duijves

发明人： Pieter W. G. Duijves

IPC分类号： H03G3/10 ,  H03G1/04 ,  H03G3/30

CPC分类号： H03G3/30 ,  H03G1/04

摘要： A control amplifier enabling large bandwidths (.apprxeq.2 GHz) and a large dynamic control range (.apprxeq.25 dB). The amplifying element is a MESFET. This MESFET is automatically biased. Thus, FET's whose pinch-off voltage is subject to a large variation can be used without further adjustments.