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    Formation of a mask on an integrated electronic circuit
    1.
    发明申请
    Formation of a mask on an integrated electronic circuit 有权
    在集成电子电路上形成掩模

    公开(公告)号：US20060286491A1

    公开(公告)日：2006-12-21

    申请号：US11441814

    申请日：2006-05-26

    Applicant: Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    Inventor： Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    IPC: C23F1/00 ,  G03C5/04

    CPC classification number: H01L21/0277 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/743 ,  H01L23/367 ,  H01L29/66484 ,  H01L29/66742 ,  H01L29/7831 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated electronic circuit includes a cavity buried in a substrate. A surface of the substrate has a depression aligned above the buried cavity. The depression is filled with a material selected so that reflection of a lithography radiation on the substrate surface is attenuated. A resist layer is deposited on the circuit and then exposed to the radiation so that those resist portions which are located above the depression and those located away from the depression receive amounts of radiation that are below and above, respectively, the development threshold of the resist. An etching mask is therefore obtained on the circuit, which is aligned with respect to the cavity and its associated surface depression.

    Abstract translation: 集成电子电路包括埋在衬底中的腔体。 衬底的表面具有在掩埋腔上方对准的凹陷。 凹陷填充有选择的材料，使得基板表面上的光刻辐射的反射减弱。 抗蚀剂层沉积在电路上，然后暴露于辐射，使得位于凹陷上方的那些抵抗部分和位于远离凹陷的那些抵抗部分分别接收低于和高于抗蚀剂的显影阈值的辐射量 。 因此，在电路上获得蚀刻掩模，其相对于腔体及其相关联的表面凹陷对准。

    Production of two superposed elements within an integrated electronic circuit
    3.
    发明授权
    Production of two superposed elements within an integrated electronic circuit 有权
    在集成电子电路内生产两个重叠元件

    公开(公告)号：US07736840B2

    公开(公告)日：2010-06-15

    申请号：US11442703

    申请日：2006-05-26

    Applicant: Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    Inventor： Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    IPC: H01L21/00 ,  G03F7/00

    CPC classification number: H01L21/76897 ,  H01L21/31144 ,  H01L21/76802 ,  H01L2924/30107

    Abstract: A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then exposed to a radiation flux level below a development threshold but high enough that a sum of the radiation flux level and a reflected secondary radiation flux level exceeds the development threshold. The lithography resist layer is developed so as to obtain a mask having an opening through which the first and second layers are removed to form a second aperture which is filled to form a second circuit element.

    Abstract translation: 形成反射的第一电路元件。 形成衰减的第一层。 高于第一电路元件。 透明的第二层形成在第一层上方以填充第一层中的孔。 然后将覆盖的光刻抗蚀剂层暴露于低于显影阈值但是足够高的辐射通量水平，使得辐射通量水平和反射的次级辐射通量水平之和超过显影阈值。 显影光刻抗蚀剂层以获得具有开口的掩模，通过该开口除去第一和第二层以形成填充以形成第二电路元件的第二孔。

    FLAT LIGHT CONCENTRATION DEVICE WITH REDUCED THICKNESS
    4.
    发明申请
    FLAT LIGHT CONCENTRATION DEVICE WITH REDUCED THICKNESS 有权
    具有减小厚度的平面光浓度器件

    公开(公告)号：US20100037954A1

    公开(公告)日：2010-02-18

    申请号：US12593696

    申请日：2008-03-31

    Applicant: Philippe Thony

    Inventor： Philippe Thony

    IPC: H01L31/00 ,  G02B27/44 ,  B29C35/08 ,  B29C59/04 ,  B29C59/00 ,  B44C1/22 ,  B29C65/00 ,  G03F7/00

    CPC classification number: H01L31/0547 ,  Y02E10/52 ,  Y10T156/10

    Abstract: A light concentration device includes: a plate including two principal faces and an edge between the two principal faces, a refractive index gradient existing between the two principal faces, and a diffraction grating functioning in reflection or semi-reflection that cooperates with one of the principal faces of the plate having the highest refractive index, the principal face having the lowest refractive index forming a front entry face for the light, at least one exit zone for the light being disposed on the edge.

    Abstract translation: 光浓度装置包括：板，包括两个主面和两个主面之间的边缘，存在于两个主面之间的折射率梯度，以及与反射或半反射相互作用的衍射光栅，其与主体之一 具有最高折射率的板的表面，具有最低折射率的主面形成用于光的前入口面，用于光的至少一个出射区设置在边缘上。

    Method for the formation of an integrated electronic circuit having a closed cavity
    7.
    发明授权
    Method for the formation of an integrated electronic circuit having a closed cavity 有权
    用于形成具有封闭空腔的集成电子电路的方法

    公开(公告)号：US07494932B2

    公开(公告)日：2009-02-24

    申请号：US11441814

    申请日：2006-05-26

    Applicant: Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    Inventor： Jessy Bustos ,  Philippe Thony ,  Philippe Coronel

    IPC: H01L21/311

    CPC classification number: H01L21/0277 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/743 ,  H01L23/367 ,  H01L29/66484 ,  H01L29/66742 ,  H01L29/7831 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated electronic circuit includes a cavity buried in a substrate. A surface of the substrate has a depression aligned above the buried cavity. The depression is filled with a material selected so that reflection of a lithography radiation on the substrate surface is attenuated. A resist layer is deposited on the circuit and then exposed to the radiation so that those resist portions which are located above the depression and those located away from the depression receive amounts of radiation that are below and above, respectively, the development threshold of the resist. An etching mask is therefore obtained on the circuit, which is aligned with respect to the cavity and its associated surface depression.

    Abstract translation: 集成电子电路包括埋在衬底中的腔体。 衬底的表面具有在掩埋腔上方对准的凹陷。 凹陷填充有选择的材料，使得基板表面上的光刻辐射的反射减弱。 抗蚀剂层沉积在电路上，然后暴露于辐射，使得位于凹陷上方的那些抵抗部分和位于远离凹陷的那些抵抗部分分别接收低于和高于抗蚀剂的显影阈值的辐射量 。 因此，在电路上获得蚀刻掩模，其相对于腔体及其相关联的表面凹陷对准。

    Active-switching laser and microchip laser
    9.
    发明授权
    Active-switching laser and microchip laser 失效
    主动切换激光和微芯片激光

    公开(公告)号：US5889798A

    公开(公告)日：1999-03-30

    申请号：US860756

    申请日：1997-08-11

    Applicant: Engin Molva ,  Philippe Thony

    Inventor： Engin Molva ,  Philippe Thony

    IPC: H01S3/06 ,  H01S3/08 ,  H01S3/105 ,  H01S3/108 ,  H01S3/11 ,  H01S3/10

    CPC classification number: H01S3/0627 ,  H01S3/08 ,  H01S3/107 ,  H01S3/0602 ,  H01S3/0615 ,  H01S3/108

    Abstract: The invention relates to a laser cavity having an active laser medium and two mirrors forming a Fabry-Perot cavity, characterized in that the cavity is at the optical stability limit and in that there are means for varying the optical length of the cavity, so as to pass from an optically unstable state into a stable state.

    Abstract translation: PCT No.PCT / FR96 / 00106 Sec。 371日期1997年8月11日 102（e）日期1997年8月11日PCT 1996年1月23日PCT PCT。 第WO96 / 23335号公报 日期：1996年8月1日本发明涉及一种具有活性激光介质和形成法布里 - 珀罗腔的两个反射镜的激光腔，其特征在于，所述空腔处于光学稳定极限，并且具有改变光学长度的装置 该腔体从光学不稳定状态转变为稳定状态。

    Flat light concentration device with reduced thickness
    10.
    发明授权
    Flat light concentration device with reduced thickness 有权
    扁平光浓缩装置，厚度减小

    公开(公告)号：US08497422B2

    公开(公告)日：2013-07-30

    申请号：US12593696

    申请日：2008-03-31

    Applicant: Philippe Thony

    Inventor： Philippe Thony

    IPC: H01L31/00 ,  F24J2/08 ,  F24J2/10 ,  G02B5/18

    CPC classification number: H01L31/0547 ,  Y02E10/52 ,  Y10T156/10

    Abstract: A light concentration device includes: a plate including two principal faces and an edge between the two principal faces, a refractive index gradient existing between the two principal faces, and a diffraction grating functioning in reflection or semi-reflection that cooperates with one of the principal faces of the plate having the highest refractive index, the principal face having the lowest refractive index forming a front entry face for the light, at least one exit zone for the light being disposed on the edge.

    Abstract translation: 光浓度装置包括：板，包括两个主面和两个主面之间的边缘，存在于两个主面之间的折射率梯度，以及与反射或半反射相互作用的衍射光栅，其与主体之一 具有最高折射率的板的表面，具有最低折射率的主面形成用于光的前入口面，用于光的至少一个出射区设置在边缘上。

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