Abstract:
A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.
Abstract:
A heterostructure laser diode is provided with an active region that includes a ternary or quaternary semiconductor compound. The composition of the semiconductor compound forming the active region is modulated resulting in an active region with a modulated strain profile (.increment.a/a), e.g., a triangular sawtooth-like strain profile, perpendicular to the laser diodes epitaxial layers, i.e., parallel to the z-axis. This permits the present invention to increase strain and avoid formation of misfit dislocations by compensation, i.e., by inserting strained layers having opposing strains.
Abstract translation:异质结激光二极管设置有包括三元或四元半导体化合物的有源区。 调制形成有源区的半导体化合物的组成,产生具有调制的应变分布(INCREMENT a / a)的有源区,例如垂直于激光二极管外延层的三角形锯齿状应变分布,即平行 到z轴。 这允许本发明增加应变并避免通过补偿形成失配位错,即通过插入具有相反应变的应变层。
Abstract:
A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2 overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2 overcoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiO2 overcoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.
Abstract:
This disclosure provides systems, methods and apparatus relating to implementations of a switchable substrate that can be used in an imaging device. In one aspect, the switchable substrate includes a plurality of pixels, with each pixel having at least one switchable element. The switchable element can be switched between a first optical state and a second optical state. In the first optical state, a first spectral band of broadband light is reflected from the switchable element while a second spectral band is transmitted through the switchable element. In the second optical state, the first spectral band of the broadband light is transmitted through the switchable element while the second spectral band is reflected from the switchable element.
Abstract:
A slider assembly is provided comprising a plurality of sliders bonded by a debondable solid encapsulant. The solid encapsulant is comprised of a polymer prepared by polymerizing a mixture of first and second monomers in a nonstoichiometric ratio effective to render the encapsulant debondable. Each slider has a surface that is free from the encapsulant. The encapsulant-free surfaces are coplanar to each other. Also provided are methods for forming the assembly and methods for patterning a slider surface using the encapsulant.