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公开(公告)号：US5273910A
公开(公告)日：1993-12-28
申请号：US880309
申请日：1992-05-05
IPC分类号： H01L27/146 , H01L21/283 , H01L21/335
CPC分类号： H01L27/146
摘要： The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
摘要翻译： 本发明提供具有实时和非破坏性读出的大面积，高像素密度的固态辐射检测器。 固态检测器包括沉积在衬底上以形成阵列的多个场效应晶体管。 平坦化层沉积在晶体管阵列上。 能量敏感层沉积在平坦化层上。 提供了用于将能量敏感层与阵列的每个晶体管电连接的装置。 顶部电极层沉积在能量敏感层上。 固态检测器还包括用于从阵列的每个FET提供电子读出的电路装置。
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公开(公告)号：US5235195A
公开(公告)日：1993-08-10
申请号：US963063
申请日：1992-10-19
CPC分类号： H01L27/146 , H01L27/14643
摘要： The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
摘要翻译： 本发明提供具有实时和非破坏性读出的大面积，高像素密度的固态辐射检测器。 固态检测器包括沉积在衬底上以形成阵列的多个场效应晶体管。 平坦化层沉积在晶体管阵列上。 能量敏感层沉积在平坦化层上。 提供了用于将能量敏感层与阵列的每个晶体管电连接的装置。 顶部电极层沉积在能量敏感层上。 固态检测器还包括用于从阵列的每个FET提供电子读出的电路装置。
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公开(公告)号：US5182624A
公开(公告)日：1993-01-26
申请号：US564632
申请日：1990-08-08
申请人： Nang T. Tran , Neil W. Loeding , David V. Nins
发明人： Nang T. Tran , Neil W. Loeding , David V. Nins
CPC分类号： H01L27/146 , H01L27/14643
摘要： The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
摘要翻译： 本发明提供具有实时和非破坏性读出的大面积，高像素密度的固态辐射检测器。 固态检测器包括沉积在衬底上以形成阵列的多个场效应晶体管。 平坦化层沉积在晶体管阵列上。 能量敏感层沉积在平坦化层上。 提供了用于将能量敏感层与阵列的每个晶体管电连接的装置。 顶部电极层沉积在能量敏感层上。 固态检测器还包括用于从阵列的每个FET提供电子读出的电路装置。
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公开(公告)号：US4820586A
公开(公告)日：1989-04-11
申请号：US112364
申请日：1987-10-26
CPC分类号： H01L41/193 , C08G69/48 , D06M13/192 , D06P5/22 , H01L37/025 , Y10T428/3154
摘要： A pyroelectric and isotropic piezoelectric polymeric film, the film being formed from a blend of polyvinylidene fluoride and at least one polymer miscible therewith, and prepared by forming the film, heating it to a temperature sufficient to render the film substantially amorphous, cooling at a rate and to a temperature sufficient to prevent crystallization, and polarizing the film to render same .beta.-crystalline and pyroelectric and isotropically piezoelectric.
摘要翻译： 一种热电和各向同性的压电聚合物膜，该膜由聚偏二氟乙烯和至少一种与其混合的聚合物的共混物形成，并通过形成膜制备，将其加热到足以使膜基本上无定形的温度，以一定速率冷却 并且达到足以防止结晶的温度，并且使膜偏振以形成相同的β-晶态和热电性和各向同性压电。
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5.发明授权
公开(公告)号：US4499515A
公开(公告)日：1985-02-12
申请号：US398419
申请日：1982-07-14
CPC分类号： G01R33/06 , G11B5/1278 , G11B5/332 , G11B5/58 , H01L41/125
摘要： A thin film magnetic recording playback head is disclosed wherein mechanically coupled films of a magnetostrictive material and of a piezoresistive material are utilized with a solid state amplifier electrically coupled to sense resistance changes in the piezoresistive film. In operation, localized magnetic patterns on a recording medium induce strain in the magnetostrictive film, which in turn induces in the piezoresistive film corresponding changes in electrical resistance.
摘要翻译： 公开了一种薄膜磁记录重放头，其中磁致伸缩材料和压阻材料的机械耦合薄膜与电耦合以感测压阻薄膜中的电阻变化的固态放大器一起使用。 在操作中，记录介质上的局部磁性图案在磁致伸缩膜中引起应变，这又导致压敏膜中相应的电阻变化。
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6.发明授权Method of making a film from pyroelectric and isotropic piezoelectric polymer blends 失效从热电和各向同性压电聚合物共混物制备薄膜的方法
公开(公告)号：US4606871A
公开(公告)日：1986-08-19
申请号：US605917
申请日：1984-05-01
IPC分类号： H01L37/02 , H01L41/193 , B29C35/10
CPC分类号： H01L41/193 , H01L37/025 , H01L41/317 , H01L41/45
摘要： A pyroelectric and isotropic piezoelectric polymeric film, the film being formed from a blend of polyvinylidene fluoride and at least one polymer miscible therewith at a temperature above the melting point of the polyvinylidene fluoride, and a process for preparing the film comprising forming the film, heating it to a temperature sufficient to render the film substantially amorphous, cooling at a rate and to a temperature sufficient to prevent crystallization, and polarizing the film to render same pyroelectric and isotropically piezoelectric.
摘要翻译： 一种热电性和各向同性的压电聚合物膜，该膜由聚偏二氟乙烯和至少一种与聚偏二氟乙烯的熔点以上的温度混合的聚合物的共混物形成，以及一种制备该膜的方法，包括形成该膜，加热 它达到足以使膜基本上无定形的温度，以足以防止结晶的速率和温度冷却，并且使膜偏振以形成相同的热电和各向同性地压电。
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7.发明授权Integrated magnetostrictive-piezoelectric-metal oxide semiconductor magnetic playback head 失效集成磁致伸缩压电金属氧化物半导体磁回放头
公开(公告)号：US4520413A
公开(公告)日：1985-05-28
申请号：US368025
申请日：1982-04-13
摘要： A thin-film magnetic recording playback head is disclosed wherein mechanically coupled films of a magnetostrictive material and of a piezoelectric material are deposited on a substrate together with a solid state amplifier which is coupled to the piezoelectric film. In operation, localized magnetic patterns on a recording medium induce stress in the magnetostrictive film, which in turn induces in the piezoelectric film a corresponding electrical polarization of non-equilibrium charge density, having a potential associated therewith which is applied to the solid state amplifier.
摘要翻译： 公开了一种薄膜磁记录重放头，其中磁致伸缩材料和压电材料的机械耦合膜与耦合到压电膜的固态放大器一起沉积在衬底上。 在操作中，记录介质上的局部磁性图案在磁致伸缩膜中引起应力，其又在压电膜中引起具有与其相关联的电位的非平衡电荷密度的相应电极化，其被施加到固态放大器。
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公开(公告)号：US4615848A
公开(公告)日：1986-10-07
申请号：US702023
申请日：1985-02-15
CPC分类号： H01L37/025 , H01L41/45
摘要： A pyroelectric and isotropic piezoelectric polymeric film, the film being formed from a blend of polyvinylidene fluoride and at least one polymer miscible therewith at a temperature above the melting point of the polyvinylidene fluoride, and a process for preparing the film comprising forming the film, heating it to a temperature sufficient to render the film substantially amorphous, cooling at a rate and to a temperature sufficient to prevent crystallization, and polarizing the film to render same pyroelectric and isotropically piezoelectric.
摘要翻译： 一种热电性和各向同性的压电聚合物膜，该膜由聚偏二氟乙烯和至少一种与聚偏二氟乙烯的熔点以上的温度混合的聚合物的共混物形成，以及一种制备该膜的方法，包括形成该膜，加热 它达到足以使膜基本上无定形的温度，以足以防止结晶的速率和温度冷却，并且使膜偏振以形成相同的热电和各向同性地压电。
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