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1.发明授权Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector 有权包括掩埋异质结构半导体光放大器和光电检测器的单片集成结构公开(公告)号：US08995804B2
公开(公告)日：2015-03-31
申请号：US13824726
申请日：2011-09-27
Applicant: Mohand Achouche , Christophe Caillaud , Genevieve Glastre Lemaitre , François Lelarge , Romain Brenot
Inventor： Mohand Achouche , Christophe Caillaud , Genevieve Glastre Lemaitre , François Lelarge , Romain Brenot
CPC classification number: G02B6/26 , G02B6/12002 , G02B6/12004 , G02B2006/12121 , G02B2006/12147 , G02B2006/12195 , H01S5/026 , H01S5/0262 , H01S5/1014 , H01S5/1032 , H01S5/2275 , H01S5/50
Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.
Abstract translation: 公开了一种包括掩埋异质结构半导体光放大器和包括这种结构的深脊光接收器的单片集成结构。
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公开(公告)号：US09214582B2
公开(公告)日：2015-12-15
申请号：US13991963
申请日：2011-12-07
Applicant: Mohand Achouche , Mourad Chtioui
Inventor： Mohand Achouche , Mourad Chtioui
IPC: H01L31/0352 , H01L31/101
CPC classification number: H01L31/035272 , H01L31/101
Abstract: A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.
Abstract translation: 单行载体光电二极管包括p型掺杂材料的吸收区域。 光电二极管还包括第一集电极层和第二集电极层，其中吸收区域位于第一集电极层和第二集电极层之间。
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3.发明授权Integrated optoelectronic device including a semiconductor optical amplifier and a photodiode 有权集成的光电器件包括半导体光放大器和光电二极管公开(公告)号：US07505645B2
公开(公告)日：2009-03-17
申请号：US11498254
申请日：2006-08-03
Applicant: Mohand Achouche , Romain Brenot
Inventor： Mohand Achouche , Romain Brenot
IPC: G02B6/12
CPC classification number: G02B6/12002 , G02B6/12004 , G02B6/4203 , G02B2006/12123 , H01S5/0262 , H01S5/50
Abstract: The field of the invention is that of optoelectronic devices for receiving high bit rate digital optical signals for telecommunications applications, comprising an optical amplifier and a photoreceiver diode.Generally, the two optical amplification and optical-electrical conversion functions are integrated in a common component, resulting in lower production costs, smaller footprint and improved reliability.To optimize the conversion device as a whole, it is demonstrated that there must be an active area of small thickness in the amplifier part and greater thickness in the conversion part.The invention proposes to implement this function by means of a structure comprising a diluted multimode waveguide common to the two amplification and reception sections, the first active area and the second area being disposed so as to ensure a coupling by evanescent waves with said diluted multimode waveguide.
Abstract translation: 本发明的领域是用于接收用于电信应用的高比特率数字光信号的光电子器件的领域，包括光放大器和光接收二极管。 通常，两个光放大和光电转换功能集成在一个共同的部件中，从而降低生产成本，减小占地面积和提高可靠性。 为了整体优化转换器件，证明放大器部分中必须存在厚度小的有源区域，并且转换部件中的厚度必须更大。 本发明提出通过包括两个放大和接收部分共同的稀释多模波导的结构来实现该功能，第一有源区和第二区被设置为确保通过ev逝波与所述稀释多模波导耦合 。
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公开(公告)号：US08676009B2
公开(公告)日：2014-03-18
申请号：US13112653
申请日：2011-05-20
Applicant: Nils Weimann , Vincent Houtsma , Mohand Achouche
Inventor： Nils Weimann , Vincent Houtsma , Mohand Achouche
IPC: G02B6/24
Abstract: An optical device includes a waveguide slab, first and second input port couplers, and first and second output port couplers located over a planar optical substrate. The waveguide slab has a plane of symmetry. The first and second input port couplers extend from the waveguide slab and have an input coupler pair axis located about midway between the first and second input port couplers. The input coupler pair axis is offset at a nonzero first distance from the plane of symmetry. The first and second output port couplers extend from the waveguide slab and have an output coupler pair axis located about midway between the first and second output port couplers. The output coupler pair axis is offset at a different nonzero second distance from the plane of symmetry.
Abstract translation: 光学装置包括波导板，第一和第二输入端口耦合器，以及位于平面光学基板上方的第一和第二输出端口耦合器。 波导板具有对称平面。 第一和第二输入端口耦合器从波导板延伸并且具有位于第一和第二输入端口耦合器之间的中间的输入耦合器对轴。 输入耦合器对轴线偏离对称平面的非零第一距离。 第一和第二输出端口耦合器从波导板延伸并且具有位于第一和第二输出端口耦合器之间的中间的输出耦合器对轴。 输出耦合器对轴线偏离与对称平面不同的非零第二距离。
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公开(公告)号：US20110284927A1
公开(公告)日：2011-11-24
申请号：US13139815
申请日：2009-12-18
Applicant: Mohand Achouche
Inventor： Mohand Achouche
IPC: H01L31/107 , H01L31/18
CPC classification number: H01L31/1075 , H01L31/03046
Abstract: A single carrier avalanche photodiode (200) comprising a p-doped absorption layer (213), an unintentionally doped avalanche multiplication layer (203) and an n-doped collector layer (211) and a method of manufacturing said avalanche photodiode. The absorption layer is doped at a level that allows the photodiode to operate as a single carrier device. Therefore total delay time of the device is mainly dependent on electrons. The collector layer is in charge of reducing capacitance in the device. A built-in field layer (212) of n+δ doped material may be provided between the two layers in order to improve the injection of electrons in the collector layer.
Abstract translation: 包括p掺杂吸收层（213），无意掺杂的雪崩倍增层（203）和n掺杂集电极层（211）的单载波雪崩光电二极管（200）和制造所述雪崩光电二极管的方法。 吸收层以允许光电二极管作为单载波器件工作的水平被掺杂。 因此，器件的总延迟时间主要取决于电子。 集电极层负责降低器件中的电容。 可以在两层之间提供n +δ掺杂材料的内置场层（212），以改善电子在集电层中的注入。
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Patent Agency Ranking
公开(公告)号：US20140042584A1
公开(公告)日：2014-02-13
申请号：US13991963
申请日：2011-12-07
Applicant: Mohand Achouche , Mourad Chtioui
Inventor： Mohand Achouche , Mourad Chtioui
IPC: H01L31/0352
CPC classification number: H01L31/035272 , H01L31/101
Abstract: A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.
Abstract translation: 单行载体光电二极管包括p型掺杂材料的吸收区域。 光电二极管还包括第一集电极层和第二集电极层，其中吸收区域位于第一集电极层和第二集电极层之间。
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7.发明申请Integrated optoelectronic device including a semiconductor optical amplifier and a photodiode 有权集成的光电器件包括半导体光放大器和光电二极管公开(公告)号：US20070092192A1
公开(公告)日：2007-04-26
申请号：US11498254
申请日：2006-08-03
Applicant: Mohand Achouche , Romain Brenot
Inventor： Mohand Achouche , Romain Brenot
IPC: G02B6/10
CPC classification number: G02B6/12002 , G02B6/12004 , G02B6/4203 , G02B2006/12123 , H01S5/0262 , H01S5/50
Abstract: The field of the invention is that of optoelectronic devices for receiving high bit rate digital optical signals for telecommunications applications, comprising an optical amplifier and a photoreceiver diode. Generally, the two optical amplification and optical-electrical conversion functions are integrated in a common component, resulting in lower production costs, smaller footprint and improved reliability. To optimize the conversion device as a whole, it is demonstrated that there must be an active area of small thickness in the amplifier part and greater thickness in the conversion part. The invention proposes to implement this function by means of a structure comprising a diluted multimode waveguide common to the two amplification and reception sections, the first active area and the second area being disposed so as to ensure a coupling by evanescent waves with said diluted multimode waveguide.
Abstract translation: 本发明的领域是用于接收用于电信应用的高比特率数字光信号的光电子器件的领域，包括光放大器和光接收二极管。 通常，两个光放大和光电转换功能集成在一个共同的部件中，从而降低生产成本，减小占地面积和提高可靠性。 为了整体优化转换器件，证明放大器部分中必须存在厚度小的有源区域，并且转换部件中的厚度必须更大。 本发明提出通过包括两个放大和接收部分共同的稀释多模波导的结构来实现该功能，第一有源区和第二区被设置为确保通过ev逝波与所述稀释多模波导耦合 。
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8.发明申请MONOLITHIC INTEGRATED STRUCTURE COMPRISING A BURIED HETEROSTRUCTURE SEMICONDUCTOR OPTICAL AMPLIFIER AND A PHOTODETECTOR 有权包含结构化双结构半导体光学放大器和光电转换器的单片整体结构公开(公告)号：US20130301985A1
公开(公告)日：2013-11-14
申请号：US13824726
申请日：2011-09-27
Applicant: Mohand Achouche , Christophe Caillaud , Genevieve Glastre Lemaitre , François Lelarge , Romain Brenot
Inventor： Mohand Achouche , Christophe Caillaud , Genevieve Glastre Lemaitre , François Lelarge , Romain Brenot
IPC: G02B6/26
CPC classification number: G02B6/26 , G02B6/12002 , G02B6/12004 , G02B2006/12121 , G02B2006/12147 , G02B2006/12195 , H01S5/026 , H01S5/0262 , H01S5/1014 , H01S5/1032 , H01S5/2275 , H01S5/50
Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.
Abstract translation: 公开了一种包括掩埋异质结构半导体光放大器和包括这种结构的深脊光接收器的单片集成结构。
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公开(公告)号：US07298943B2
公开(公告)日：2007-11-20
申请号：US10527621
申请日：2003-09-10
Applicant: Stephane Demiguel , Louis Giraudet , Mohand Achouche
Inventor： Stephane Demiguel , Louis Giraudet , Mohand Achouche
IPC: G02B6/32
CPC classification number: G02B6/4206 , G02B6/42 , H01L31/02327
Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.
Abstract translation: 本发明涉及一种包括光吸收层和波导结构（2）的单片光学元件（400）。 本发明更具体地适用于包括与波导（2）集成的ev逝耦合光电二极管（6）的单片组件（400）。 单片光学部件（400）包括光吸收层和与光吸收层ev逝耦合的波导（2），波导（2）的一端耦合到部件的输入面（12），以接收 输入波，10分量（400）的特征在于输入面是凸的。
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公开(公告)号：US20060165349A1
公开(公告)日：2006-07-27
申请号：US10527621
申请日：2003-09-10
Applicant: Stephane Demiguel , Louis Giraudet , Mohand Achouche
Inventor： Stephane Demiguel , Louis Giraudet , Mohand Achouche
IPC: G02B6/26
CPC classification number: G02B6/4206 , G02B6/42 , H01L31/02327
Abstract: The present invention relates to a monolithic optical component (400) comprising a light-absorbing layer and a waveguide structure (2). The invention is more particularly adapted to a monolithic component (400) comprising an evanescent coupling photodiode (6) integrated with the waveguide (2). The monolithic optical component (400) comprises a light-absorbing layer and a waveguide (2) evanescently coupled with the light-absorbing layer, the waveguide (2) having one end coupled to an input face (12) of the component to receive an input wave, the 10 component (400) being characterized in that the input face is convex.
Abstract translation: 本发明涉及一种包括光吸收层和波导结构（2）的单片光学元件（400）。 本发明更具体地适用于包括与波导（2）集成的ev逝耦合光电二极管（6）的单片组件（400）。 单片光学部件（400）包括光吸收层和与光吸收层ev逝耦合的波导（2），波导（2）的一端耦合到部件的输入面（12），以接收 输入波，10分量（400）的特征在于输入面是凸的。
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