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Patent Agency Ranking
1.发明申请SYSTEM AND METHOD FOR MATCHING SILICON OXIDE THICKNESS BETWEEN SIMILAR PROCESS TOOLS 有权用于匹配类似工艺工具之间的氧化硅厚度的系统和方法公开(公告)号：US20090125140A1
公开(公告)日：2009-05-14
申请号：US11937027
申请日：2007-11-08
Applicant: Miles Dudman , Andrew Le
Inventor： Miles Dudman , Andrew Le
IPC: G06F19/00
CPC classification number: H01L21/67253 , H01L21/67276 , H01L22/12 , H01L22/14 , H01L22/20
Abstract: The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.
Abstract translation: 本发明的一个或多个实施方式是制造用于改善氧化物厚度控制的半导体的方法，限定工艺工具，确定和评估性能变量，确定性能影响因子，然后修改制造工艺中的工艺工具的控制， 与本发明的确定结果直接相关。 本发明在减少工程时间，改进过程控制和改进循环时间方面阐述了明确的优点。
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2.发明申请SYSTEM AND METHOD OF IMPROVED PRESSURE CONTROL IN HORIZONTAL DIFFUSION FURNACE SCAVENGER SYSTEM FOR CONTROLLING SILICON OXIDE GROWTH 有权用于控制氧化硅生长的水平扩散炉加热器系统中改进压力控制的系统和方法公开(公告)号：US20090176181A1
公开(公告)日：2009-07-09
申请号：US11938438
申请日：2007-11-12
Applicant: Miles DUDMAN
Inventor： Miles DUDMAN
IPC: C30B31/10 , C30B31/18 , F27B5/04 , F27B5/18 , F27B9/04 , H01L21/677 , H01L21/316
CPC classification number: H01L21/67754 , C30B31/18 , F27B17/0025 , F27D19/00 , H01L21/3143 , H01L21/67126 , H01L21/67178 , H01L21/67253
Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
Abstract translation: 本发明一般涉及半导体晶片制造，更具体地但非排他地涉及用于使用压力控制氧化物形成的先进工艺控制方法。 在一个或多个实施方案中，本发明包括压力稳定系统，用于相对于压力形成范围，值或晶片制造过程中的一个或多个压力指示器在晶片制造期间动态地调节炉中的清除剂压力。
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3.发明授权System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth 有权用于改善水平扩散炉清除系统中控制氧化物生长的压力控制系统公开(公告)号：US08662886B2
公开(公告)日：2014-03-04
申请号：US11938438
申请日：2007-11-12
Applicant: Miles Dudman
Inventor： Miles Dudman
IPC: A01H5/02
CPC classification number: H01L21/67754 , C30B31/18 , F27B17/0025 , F27D19/00 , H01L21/3143 , H01L21/67126 , H01L21/67178 , H01L21/67253
Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
Abstract translation: 本发明一般涉及半导体晶片制造，更具体地但非排他地涉及用于使用压力控制氧化物形成的先进工艺控制方法。 在一个或多个实施方案中，本发明包括压力稳定系统，用于相对于压力形成范围，值或晶片制造过程中的一个或多个压力指示器在晶片制造期间动态地调节炉中的清除剂压力。
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4.发明申请SYSTEM AND METHOD FOR DETERMINING IN-LINE INTERFACIAL OXIDE CONTACT RESISTANCE 审中-公开用于确定在线界面氧化物接触电阻的系统和方法公开(公告)号：US20100007363A1
公开(公告)日：2010-01-14
申请号：US11949245
申请日：2007-12-03
Applicant: Miles DUDMAN , Andrew LE , Daniel ANDERSON
Inventor： Miles DUDMAN , Andrew LE , Daniel ANDERSON
IPC: G01R27/08
Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for measuring in-line contact resistance in relation to oxide formations. The present invention, in one or more implementations, include an in-line method of determining contact resistance across a semiconductor wafer and determining the contact resistance value and the number of monolayers of the wafer.
Abstract translation: 本发明一般涉及半导体晶片制造，更具体地但非排他地涉及用于测量相对于氧化物形成的在线接触电阻的先进的工艺控制方法。 在一个或多个实施方式中，本发明包括确定跨越半导体晶片的接触电阻并确定接触电阻值和晶片的单层数量的在线方法。
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5.发明授权System and method for matching silicon oxide thickness between similar process tools 有权在相似的工艺工具之间匹配氧化硅厚度的系统和方法公开(公告)号：US07983776B2
公开(公告)日：2011-07-19
申请号：US11937027
申请日：2007-11-08
Applicant: Miles Dudman , Andrew Le
Inventor： Miles Dudman , Andrew Le
IPC: G06F19/00
CPC classification number: H01L21/67253 , H01L21/67276 , H01L22/12 , H01L22/14 , H01L22/20
Abstract: The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.
Abstract translation: 本发明的一个或多个实施方式是制造用于改善氧化物厚度控制的半导体的方法，限定工艺工具，确定和评估性能变量，确定性能影响因子，然后修改制造工艺中的工艺工具的控制， 与本发明的确定结果直接相关。 本发明在减少工程时间，改进过程控制和改进循环时间方面阐述了明确的优点。
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