公开(公告)号：US06791130B2

公开(公告)日：2004-09-14

申请号：US10229954

申请日：2002-08-27

申请人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

发明人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

IPC分类号： H01L2748

CPC分类号： H01L27/14683 ,  H01L27/14636 ,  H01L27/14643

摘要： An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes. An array measurement circuit measures the charge collected and outputs pixel data defining an image.

公开(公告)号：US07411233B2

公开(公告)日：2008-08-12

申请号：US10229955

申请日：2002-08-27

申请人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

发明人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

IPC分类号： H01L31/036 ,  H01L31/113 ,  H01L31/00 ,  H01L31/075

CPC分类号： H04N5/37452 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14667 ,  H04N5/3575 ,  H04N5/359 ,  H04N5/363

摘要： An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes. An array measurement circuit measures the charge collected and outputs pixel data defining an image.

摘要翻译： 用于从电子空穴产生辐射产生图像的有源像素传感器包括具有导电扩散区阵列的晶体半导体衬底，形成在晶体半导体衬底上并包括接触电极阵列的层间电介质（ILD）层，以及 所述互连结构形成在所述ILD层上，其中所述互连结构包括包括导电通孔阵列的至少一个层。 图案化的金属焊盘的阵列形成在互连结构上并且电连接到电荷收集像素电极的阵列。 辐射吸收结构包括在互连结构上形成的光导N-I-B-P光电二极管层，并且表面电极层在辐射吸收结构之间以及表面电极层和电荷收集像素电极阵列中的每一个之间建立电场。 阵列测量电路测量所收集的电荷并输出定义图像的像素数据。

公开(公告)号：US07436038B2

公开(公告)日：2008-10-14

申请号：US10785833

申请日：2004-02-23

申请人： Michael G. Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

发明人： Michael G. Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

IPC分类号： H01L31/00

CPC分类号： G01J5/02 ,  G01J5/024 ,  G01J5/026 ,  G01J5/04 ,  G01J5/046 ,  G01J5/22 ,  G01J5/52 ,  G01J2005/0077 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/113 ,  H04N5/2351 ,  H04N5/2353 ,  H04N5/33 ,  H04N5/332 ,  H04N5/365 ,  H04N5/3651 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/378 ,  Y02E10/545 ,  Y02E10/548

摘要： A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

摘要翻译： 一种用于在宽光谱范围内进行高性能成像的MOS或CMOS传感器，包括红外光谱带的部分。 这些宽光谱范围还可以包括可见光谱的部分或全部，因此传感器具有日光和夜视能力。 该传感器包括在多个像素MOS或CMOS读出阵列上的连续多层光电二极管结构，其中光电二极管结构被选择为包括在近红外光谱范围内的响应。 优选实施例在CMOS读出阵列上结合微晶铜铟二硒化物/硫化镉光电二极管结构。 替代的优选实施例在CMOS读出阵列上结合了微晶硅锗光电二极管结构。 这些实施例中的每一个为增强的灵敏度，像素尺寸和像素数量提供了大大超过GEN III夜视技术的图像性能的夜视。 本发明的另外的优点包括低偏置电压，低功耗，紧凑的封装和辐射硬度。 在特别优选实施例中，CMOS拼接技术用于提供数百万像素焦平面阵列传感器。 没有拼接的本发明的一个实施例是200万像素传感器。 使用缝合技术可获得的其它优选实施例包括在单个晶片上制造的具有2.5亿（或更多）像素的传感器。 这些非常高的像素数传感器的特定应用是用于在低地球轨道卫星中的快速波束转向望远镜的焦平面阵列，其用于在分辨率为0.3米的1500米宽的轨道上进行跟踪。

公开(公告)号：US20050104089A1

公开(公告)日：2005-05-19

申请号：US10785833

申请日：2004-02-23

申请人： Michael Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

发明人： Michael Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

IPC分类号： H01L27/00 ,  H01L27/10 ,  H01L27/146 ,  H01L29/76 ,  H01L31/00 ,  H01L31/062 ,  H01L31/105 ,  H01L31/113

CPC分类号： G01J5/02 ,  G01J5/024 ,  G01J5/026 ,  G01J5/04 ,  G01J5/046 ,  G01J5/22 ,  G01J5/52 ,  G01J2005/0077 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/113 ,  H04N5/2351 ,  H04N5/2353 ,  H04N5/33 ,  H04N5/332 ,  H04N5/365 ,  H04N5/3651 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/378 ,  Y02E10/545 ,  Y02E10/548

摘要： A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

摘要翻译： 一种用于在宽光谱范围内进行高性能成像的MOS或CMOS传感器，包括红外光谱带的部分。 这些宽光谱范围还可以包括可见光谱的部分或全部，因此传感器具有日光和夜视能力。 该传感器包括在多个像素MOS或CMOS读出阵列上的连续多层光电二极管结构，其中光电二极管结构被选择为包括在近红外光谱范围内的响应。 优选实施例在CMOS读出阵列上结合微晶铜铟二硒化物/硫化镉光电二极管结构。 替代的优选实施例在CMOS读出阵列上结合了微晶硅锗光电二极管结构。 这些实施例中的每一个为增强的灵敏度，像素尺寸和像素数量提供了大大超过GEN III夜视技术的图像性能的夜视。 本发明的另外的优点包括低偏置电压，低功耗，紧凑的封装和辐射硬度。 在特别优选实施例中，CMOS拼接技术用于提供数百万像素焦平面阵列传感器。 没有拼接的本发明的一个实施例是200万像素传感器。 使用缝合技术可获得的其它优选实施例包括在单个晶片上制造的具有2.5亿（或更多）像素的传感器。 这些非常高的像素数传感器的特定应用是用于在低地球轨道卫星中的快速波束转向望远镜的焦平面阵列，其用于在分辨率为0.3米的1500米宽的轨道上进行跟踪。

公开(公告)号：US06798033B2

公开(公告)日：2004-09-28

申请号：US10229956

申请日：2002-08-27

申请人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

发明人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

IPC分类号： H01L3100

CPC分类号： H01L27/14632 ,  H01L27/14643

摘要： An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes. An array measurement circuit measures the charge collected and outputs pixel data defining an image.

摘要翻译： 用于从电子空穴产生辐射产生图像的有源像素传感器包括具有导电扩散区阵列的晶体半导体衬底，形成在晶体半导体衬底上并包括接触电极阵列的层间电介质（ILD）层，以及 所述互连结构形成在所述ILD层上，其中所述互连结构包括包括导电通孔阵列的至少一个层。 图案化的金属焊盘的阵列形成在互连结构上并且电连接到电荷收集像素电极的阵列。 辐射吸收结构包括在互连结构上形成的光导N-I-B-P光电二极管层，并且表面电极层在辐射吸收结构之间以及表面电极层和电荷收集像素电极阵列中的每一个之间建立电场。 阵列测量电路测量所收集的电荷并输出定义图像的像素数据。