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    Plasma Systems with Magnetic Filter Devices to Alter Film Deposition/Etching Characteristics
    5.
    发明申请
    Plasma Systems with Magnetic Filter Devices to Alter Film Deposition/Etching Characteristics 审中-公开
    具有磁性过滤装置的等离子体系统以改变膜沉积/蚀刻特性

    公开(公告)号：US20080296143A1

    公开(公告)日：2008-12-04

    申请号：US12191505

    申请日：2008-08-14

    申请人： Joseph Paul Ellul ,  Melvin C. Schmidt ,  Viktor Zekeriya ,  Rajiv L. Patel ,  Jack Kelly

    发明人： Joseph Paul Ellul ,  Melvin C. Schmidt ,  Viktor Zekeriya ,  Rajiv L. Patel ,  Jack Kelly

    IPC分类号： C23C14/34 ,  H05H1/46

    CPC分类号： C23C14/35 ,  H01J37/32431 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/3408

    摘要： Plasma systems with magnetic filter devices to alter film deposition/etching characteristics by altering the effective magnetic field distribution. The magnetic filter devices are placed between the magnet or magnets and a target, typically a semiconductor wafer, and selected and configured to alter the magnetic field to obtain the desired processing results. For deposition, the magnetic filter may be chosen to provide more uniform deposition, to provide increased deposition rates at or adjacent the edges of a wafer to compensate for increased etching rates at the edges of a wafer in a subsequent etching or polishing process. For annealing and doping, the magnetic field may be altered to provide more uniform equivalent annealing or doping across the wafer. Various applications are disclosed.

    摘要翻译： 具有磁性过滤装置的等离子体系统，通过改变有效磁场分布来改变成膜/蚀刻特性。 磁性过滤器装置被放置在磁体或磁体与目标（通常为半导体晶片）之间，并被选择和配置成改变磁场以获得所需的处理结果。 为了沉积，可以选择磁性过滤器以提供更均匀的沉积，以在晶片的边缘处或附近提供增加的沉积速率，以补偿随后的蚀刻或抛光工艺中在晶片边缘处的增加的蚀刻速率。 对于退火和掺杂，可以改变磁场以提供跨晶片更均匀的等效退火或掺杂。 公开了各种应用。