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公开(公告)号:US20060061330A1
公开(公告)日:2006-03-23
申请号:US10518326
申请日:2003-08-11
申请人: Takaya Sato , Yoshiki Kobayashi , Ryutaro Nozu , Tatsuya Maruo , Kimiyo Banno , Masaaki Isobe
发明人: Takaya Sato , Yoshiki Kobayashi , Ryutaro Nozu , Tatsuya Maruo , Kimiyo Banno , Masaaki Isobe
IPC分类号: H02J7/00
CPC分类号: H02J7/0021 , H01M10/44 , H02J7/0027
摘要: A charging system for a rechargeable battery with a rapid charge capacity. This invention relates to the charging system for the rechargeable battery with a rapid charge capacity which can be recharged at a public place. The charging system comprises a charging equipment for the rapid charge battery, a measurement display unit which measures and displays a charging condition and deterioration of the rapid charge battery, and a fee collection device which collects a charging fee.
摘要翻译: 具有快速充电能力的充电电池的充电系统。 本发明涉及一种具有快速充电能力的可再充电电池的充电系统,其可在公共场所进行再充电。 充电系统包括用于快速充电电池的充电设备,测量并显示充电状况和快速充电电池劣化的测量显示单元,以及收取费用的收费设备。
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公开(公告)号:US5580383A
公开(公告)日:1996-12-03
申请号:US299518
申请日:1994-09-01
申请人: Hirohiko Ikegaya , Masaaki Isobe , Seishi Watanabe
发明人: Hirohiko Ikegaya , Masaaki Isobe , Seishi Watanabe
摘要: An improved surface treatment system, assembly, workstation, method, and liquid for plating and the like. The assembly includes a member defining a fluid passage within the interior surface of a workpiece which is connected to a treating liquid feed channel and a treating liquid discharge channel. Desirably, the assembly includes a sealing mechanism at least partially insertable into the opening of the sealing mechanism to avoid leakage.
摘要翻译: 改进的表面处理系统,组装,工作站,方法和用于电镀的液体等。 组件包括在工件的内表面内限定流体通道的构件,其连接到处理液体进料通道和处理液体排出通道。 理想地,组件包括至少部分地可插入到密封机构的开口中的密封机构,以避免泄漏。
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公开(公告)号:US5647967A
公开(公告)日:1997-07-15
申请号:US299838
申请日:1994-09-01
申请人: Yasuyuki Murase , Masaaki Isobe
发明人: Yasuyuki Murase , Masaaki Isobe
CPC分类号: F02F1/00 , C25D15/02 , C25D5/08 , F02B77/02 , F05C2203/04
摘要: A plating liquid for forming a nickel plating layer containing a dispersed substance and phosphorus having 1.0 g/l or more of sodium is desirably utilized in the high speed plating process. Other important aspects of the invention include a plating method using the aforementioned plating liquid, characterized in that a voltage is impressed while permitting the plating liquid to flow between a surface to be plated of a workpiece at a plating liquid flow rate of 1.0-3.0 m/sec and an electric current density of 20-200 A/dm.sup.2, and an engine cylinder having a plated interior surface characterized in that the plating layer of the cylinder is formed by a high speed plating treatment using the aforementioned plating liquid.
摘要翻译: 用于形成含有分散物质的镍镀层和含有1.0g / l以上的钠的磷的电镀液优选用于高速电镀工艺。 本发明的其他重要方面包括使用上述电镀液的电镀方法,其特征在于,使电镀液以允许电镀液体以1.0-3.0μm的电镀液流速在待镀表面之间流动, /秒,电流密度为20〜200A / dm 2,以及具有电镀内表面的发动机气缸,其特征在于,通过使用上述电镀液的高速电镀处理来形成气缸的镀层。
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公开(公告)号:US5552026A
公开(公告)日:1996-09-03
申请号:US299834
申请日:1994-09-01
摘要: An improved surface treatment system, assembly, workstation and method for plating and the like. The assembly includes a suction pump along the treating liquid discharge end to circulate treatment fluid and avoid leakage. The assembly includes a member defining a fluid passage within the interior surface of a workpiece which is connected to a treating liquid feed channel and a treating liquid discharge channel. Advantageously, a washing fluid inlet is provided to permit a workpiece to be both treated and washed at the same workstation. The assembly may be used with a cover as an additional means to avoid leakage.
摘要翻译: 改进的表面处理系统,组装,工作站和电镀方法等。 组件包括沿着处理液排出端的抽吸泵,以循环处理流体并避免泄漏。 组件包括在工件的内表面内限定流体通道的构件,其连接到处理液体进料通道和处理液体排出通道。 有利地,提供洗涤流体入口以允许工件在相同的工作站处理和洗涤。 该组件可以与盖一起用作附加装置以避免泄漏。
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公开(公告)号:US5014132A
公开(公告)日:1991-05-07
申请号:US383179
申请日:1989-07-21
IPC分类号: H01L27/146 , H01L27/148 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/3728
CPC分类号: H01L27/14831
摘要: A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.
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