公开(公告)号：US20070257009A1

公开(公告)日：2007-11-08

申请号：US11416801

申请日：2006-05-03

Applicant: Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

Inventor： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC: C23F1/00

CPC classification number: H01J37/321 ,  H01L21/67069

Abstract: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

Abstract translation: 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

公开(公告)号：US20060166108A1

公开(公告)日：2006-07-27

申请号：US11044358

申请日：2005-01-27

Applicant: Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

Inventor： Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F1/32 ,  G03F1/54 ,  G03F1/80

Abstract: Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.

Abstract translation: 本文公开了制造光掩模的方法。 在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一 抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

公开(公告)号：US20060000802A1

公开(公告)日：2006-01-05

申请号：US10882084

申请日：2004-06-30

Applicant: Ajay Kumar ,  Madhavi Chandrachood ,  Scott Anderson ,  Peter Satitpunwaycha ,  Wai Yau

Inventor： Ajay Kumar ,  Madhavi Chandrachood ,  Scott Anderson ,  Peter Satitpunwaycha ,  Wai Yau

IPC: B44C1/22

CPC classification number: H01J37/32651 ,  G03F1/80 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32871 ,  H01J2237/0225

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

Abstract translation: 本文提供了蚀刻光掩模的方法和设备。 在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。 离子基屏蔽设置在基座上方。 将衬底放置在离子基屏蔽下方的基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 基底主要用通过屏蔽的自由基进行蚀刻。

公开(公告)号：US06371836B1

公开(公告)日：2002-04-16

申请号：US09666511

申请日：2000-09-20

Applicant: Brian J. Brown ,  Robert Tolles ,  James C. Nystrom ,  Doyle Bennett ,  Madhavi Chandrachood

Inventor： Brian J. Brown ,  Robert Tolles ,  James C. Nystrom ,  Doyle Bennett ,  Madhavi Chandrachood

IPC: B24B100

CPC classification number: B24B53/017 ,  B24B37/26

Abstract: An improved chemical-mechanical polishing method and apparatus is provided. A brush is employed to continually brush slurry particles from surface features, e.g., grooves, on a polishing pad. In this manner slurry is prevented from becoming compacted within the grooves as the slurry passes beneath and is subjected to compressive forces of a wafer polishing head. The invention may be practiced by use of a stationary brush operatively coupled to the polishing pad surface, or by an improved conditioning assembly having both a diamond surface for conditioning the polishing pad and a brush for cleaning the pad's surface features. The brush portion of the conditioning assembly may or may not rotate as it is scanned across the surface of the polishing pad.

Abstract translation: 提供了改进的化学机械抛光方法和装置。 使用刷子来持续地从抛光垫上的表面特征（例如凹槽）刷洗浆料颗粒。 以这种方式，当浆料通过下方并且经受晶片抛光头的压缩力时，防止浆料在凹槽内变得压实。 本发明可以通过使用可操作地耦合到抛光垫表面的固定刷或者通过改进的调节组件来实现，该调节组件具有用于调节抛光垫的金刚石表面和用于清洁垫的表面特征的刷子。 当调整组件的刷部分扫过抛光垫的表面时，调节组件的刷部分可以或可以不旋转。

公开(公告)号：US6106634A

公开(公告)日：2000-08-22

申请号：US249538

申请日：1999-02-11

Applicant: Steve G. Ghanayem ,  Madhavi Chandrachood

Inventor： Steve G. Ghanayem ,  Madhavi Chandrachood

IPC: B08B17/02 ,  C23C16/44 ,  H01L21/00 ,  B08B7/04

CPC classification number: H01L21/67167 ,  B08B17/02 ,  C23C16/4401 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/67248

Abstract: The present invention provides methods and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the method includes the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.

Abstract translation: 本发明提供了在衬底加工期间减少微粒污染的方法和装置。 在一个实施例中，该方法包括将预热器中的衬底预热到所需温度的步骤。 预热的基底从预热器转移到其中压力在约二（2）乇和约七百六十六毫乇之间的缓冲区。 预热的基底从缓冲区转移到反应室。 在底物转移过程中，热ic力有助于将颗粒从衬底表面排除。

公开(公告)号：US08293430B2

公开(公告)日：2012-10-23

申请号：US11044358

申请日：2005-01-27

Applicant: Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

Inventor： Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

IPC: G03F1/00

CPC classification number: G03F1/32 ,  G03F1/54 ,  G03F1/80

Abstract: Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.

Abstract translation: 本文公开了制造光掩模的方法。 在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一 抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

公开(公告)号：US20070257008A1

公开(公告)日：2007-11-08

申请号：US11416744

申请日：2006-05-03

Applicant: Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

Inventor： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC: C23F1/00

CPC classification number: H01J37/32568 ,  H01J37/321

Abstract: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicators, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

Abstract translation: 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括将（a）工件，（b）外源功率施加器，围绕径向倾斜轴线旋转至等离子体工艺参数的空间分布具有至少几乎最小的非 - 相对于共同的对称轴线对称，并且将内源功率施加器相对于外源功率施加器沿对称轴平移到空间分布具有至少几乎最小的非均匀性的位置 工件。

公开(公告)号：US06192601B1

公开(公告)日：2001-02-27

申请号：US09583322

申请日：2000-05-30

Applicant: Steve G. Ghanayem ,  Madhavi Chandrachood

Inventor： Steve G. Ghanayem ,  Madhavi Chandrachood

IPC: F26B504

CPC classification number: H01L21/67167 ,  B08B17/02 ,  C23C16/4401 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/67248

Abstract: The present invention provides method and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.

Abstract translation: 本发明提供了在衬底加工过程中减少微粒污染的方法和装置。 在一个实施例中，将预热器中的衬底预热到所需温度的步骤。 预热的基底从预热器转移到其中压力在约二（2）乇和约七百六十六毫乇之间的缓冲区。 预热的基底从缓冲区转移到反应室。 在底物转移过程中，热ic力有助于将颗粒从衬底表面排除。

公开(公告)号：US08778574B2

公开(公告)日：2014-07-15

申请号：US13750888

申请日：2013-01-25

Applicant: Keven Yu ,  Madhavi Chandrachood ,  Amitabh Sabharwal ,  Ajay Kumar

Inventor： Keven Yu ,  Madhavi Chandrachood ,  Amitabh Sabharwal ,  Ajay Kumar

IPC: G03F7/00 ,  G03F1/80

CPC classification number: G03F1/00 ,  G03F1/22 ,  G03F1/80

Abstract: A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.

Abstract translation: 本文提供了蚀刻光掩模的方法和设备。 在一个实施例中，蚀刻设置在光掩模上的ARC层或吸收层的方法包括将膜堆叠转移到蚀刻室中，该膜堆具有通过图案化层局部暴露的ARC层或吸收层，提供气体 将包含至少一种含氟气体的混合物加入到处理室中，施加源RF功率以从气体混合物形成等离子体，将第一类型的RF偏置功率施加到衬底上第一时间段，施加第二类型 的RF偏置功率远离衬底持续第二段时间，并且在存在等离子体的情况下通过图案化层蚀刻ARC层或吸收层。

公开(公告)号：US20130040231A1

公开(公告)日：2013-02-14

申请号：US13652822

申请日：2012-10-16

Applicant: Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

Inventor： Madhavi Chandrachood ,  Ajay Kumar ,  Wai-Fan Yau

IPC: G03F1/76

CPC classification number: G03F1/32 ,  G03F1/54 ,  G03F1/80

Abstract: Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.

Abstract translation: 本文公开了制造光掩模的方法。 在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一 抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。