公开(公告)号：US20070119544A1

公开(公告)日：2007-05-31

申请号：US11534599

申请日：2006-09-22

申请人： Eric Hansen ,  VICTOR MIMKEN ,  MARTIN BLECK ,  M. YALAMANCHILI ,  JOHN ROSATO

发明人： Eric Hansen ,  VICTOR MIMKEN ,  MARTIN BLECK ,  M. YALAMANCHILI ,  JOHN ROSATO

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/02052 ,  B08B3/048 ,  B08B3/12 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67751

摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

摘要翻译： 在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。 可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。 超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。 根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过 在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

公开(公告)号：US20080000495A1

公开(公告)日：2008-01-03

申请号：US11460172

申请日：2006-07-26

申请人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M. Yalamanchili ,  John Rosato ,  Wyland Atkins ,  Yongqiang Lu

发明人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M. Yalamanchili ,  John Rosato ,  Wyland Atkins ,  Yongqiang Lu

IPC分类号： B08B3/12

CPC分类号： B08B3/12 ,  B08B3/048 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67751 ,  H01L21/68707

摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

摘要翻译： 在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。 可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。 超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。 根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过 在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

公开(公告)号：US20060148267A1

公开(公告)日：2006-07-06

申请号：US10492726

申请日：2002-12-06

申请人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M Yalamanchili ,  John Rosato

发明人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M Yalamanchili ,  John Rosato

IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02052 ,  B08B3/048 ,  B08B3/12 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67751

摘要： In a method for treating semiconductor substrates, one or two substrates are positioned in a substrate process chamber and subjected to wet etching, cleaning, rinsing and/or drying steps. During cleaning or rinsing a band of megasonic energy is created within the process chamber to create an active rinse or cleaning zone, and the substrate(s) are translated through the active zone during a rinsing or cleaning process within the chamber.

摘要翻译： 在处理半导体衬底的方法中，将一个或两个衬底放置在衬底处理室中，并进行湿蚀刻，清洗，漂洗和/或干燥步骤。 在清洁或漂洗期间，在处理室内产生一系列兆声波能量，以产生主动冲洗或清洗区域，并且在室内的漂洗或清洁过程中将基底平移通过活性区。

公开(公告)号：US20070272657A1

公开(公告)日：2007-11-29

申请号：US11460171

申请日：2006-07-26

申请人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M. Yalamanchili ,  John Rosato ,  Yongqiang Lu

发明人： Eric Hansen ,  Victor Mimken ,  Martin Bleck ,  M. Yalamanchili ,  John Rosato ,  Yongqiang Lu

IPC分类号： B08B3/12

CPC分类号： B08B3/12 ,  B08B3/048 ,  H01L21/67028 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67751 ,  H01L21/68707

摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

摘要翻译： 在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。 可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。 超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。 根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过 在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。