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1.发明授权
公开(公告)号：US5495414A
公开(公告)日：1996-02-27
申请号：US43680
申请日：1993-04-07
IPC分类号： B60R21/16 , B60R21/01 , G01P15/00 , G01P15/125 , B60R21/32
CPC分类号： B60R21/0133 , B60R21/0132 , G01P15/125 , G01P2015/0831
摘要： A single-point impact sensor has a fully differential capacitive sense element for providing a capacitive difference which is proportional to the acceleration of the vehicle. The capacitive difference is converted into a digital pulse train signal which is pulse density modulated with variations in the capacitance. The pulse density of the pulse train is evaluated according to a hierarchy of counters and timers to determine if it is indicative of an activation worthy event. In one embodiment, a non-volatile programmable memory is provided to control the operation of the impact sensor.
摘要翻译： 单点冲击传感器具有全差分电容感测元件，用于提供与车辆加速度成比例的电容差。 电容差被转换为数字脉冲串信号，其脉冲密度随电容变化而被调制。 根据计数器和计时器的层次来评估脉冲串的脉冲密度，以确定它是否表示激活值事件。 在一个实施例中，提供非易失性可编程存储器以控制冲击传感器的操作。
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2.发明授权Fully integrated single-crystal silicon-on-insulator process, sensors and circuits 失效完全集成的单晶硅绝缘体工艺，传感器和电路
公开(公告)号：US5343064A
公开(公告)日：1994-08-30
申请号：US169788
申请日：1988-03-18
CPC分类号： B81C1/00246 , G01P15/0802 , G01P15/125 , H01L27/20 , G01P2015/0828
摘要： Integrated semiconductor-on-insulator (SOI) sensors and circuits which are electrostatically bonded to a support substrate, such as glass or an oxidized silicon wafer, are disclosed. The SOI sensors and SOI circuits are both formed using a novel fabrication process which allows multiple preformed and pretested integrated circuits on a silicon wafer to be electrostatically bonded to the support substrate without exposing the sensitive active regions of the electronic devices therein to a damaging electric field. The process includes forming a composite bonding structure on top of the integrated circuits prior to the bonding step. This composite structure includes a conductive layer dielectrically isolated from the circuit devices and electrically connected to the silicon wafer, which is spaced form but laterally overlaps at least the active semiconductive regions of the circuit devices. The SOI sensors each include a transducer and at least one active electronic device, which are both made at least in part from a common layer of lightly-doped single-crystal semiconductor material grown on the silicon wafer. After the bonding step, the bulk of the single-crystal wafer is removed, leaving the epitaxial layer containing the circuits and transducers. The epitaxial layer is then patterned into isolated mesas to dielectrically isolate the electronic devices. This patterning step also exposes bond pads, allowing external connections to be readily made to the sensors and circuits. Exemplary solid-state sensors disclosed herein include a capacitive accelerometer and pressure sensor.
摘要翻译： 公开了集成绝缘体上绝缘体（SOI）传感器和静电结合到诸如玻璃或氧化硅晶片之类的支撑衬底的电路。 SOI传感器和SOI电路都使用新颖的制造工艺来形成，其允许在硅晶片上的多个预成型和预测试的集成电路静电结合到支撑衬底，而不将其中的电子器件的敏感有源区域暴露于有害电场 。 该方法包括在结合步骤之前在集成电路的顶部上形成复合结合结构。 该复合结构包括与电路器件介电隔离并与硅晶片电连接的导电层，该硅晶片与电路器件的至少有源半导体区域间隔开形式但横向重叠。 SOI传感器各自包括换能器和至少一个有源电子器件，其至少部分地由在硅晶片上生长的共同的轻掺杂单晶半导体材料层制成。 在接合步骤之后，去除大部分单晶晶片，留下包含电路和换能器的外延层。 然后将外延层图案化成隔离的台面以介电地隔离电子器件。 该图案化步骤还暴露了接合焊盘，允许容易地对传感器和电路进行外部连接。 本文公开的示例性固体传感器包括电容加速度计和压力传感器。
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3.发明授权Method and apparatus for self-testing a single-point automotive impact sensing system 失效用于自检单点汽车碰撞感应系统的方法和装置
公开(公告)号：US5433101A
公开(公告)日：1995-07-18
申请号：US89198
申请日：1993-07-12
CPC分类号： B60R21/0132 , B60R21/0173 , G01P21/00
摘要： A method and apparatus for detecting faults in a single-point impact sensing system having electrically conductive self-test plates within the sensor to electrostatically deflect the sense element during self-test sequence. The deflection of the sense element is identical to deflection which would occur during an actual activation worthy impact event. The response time from the deflection of the sense element to the change in state of an activation flag is recorded and compared with an expected response time stored in non-volatile memory. Differences between the test time and the expected time is indicative of either a hard fault such as malfunction or reduced function of sensing system components or soft faults such as loss of calibration. Diagnostic self-test in this manner not only checks the electrical continuity of the impact sensing system, but also the mechanical integrity and the calibration of the sensing system.
摘要翻译： 一种在单点冲击感测系统中检测故障的方法和装置，其具有传感器内的导电自测试板，以在自测试顺序期间静电偏转感测元件。 感测元件的偏转与在实际激活的有价值的冲击事件期间将发生的偏转相同。 记录从感测元件偏转到激活标志状态变化的响应时间，并与存储在非易失性存储器中的预期响应时间进行比较。 测试时间和预期时间之间的差异表示硬故障，例如故障或感测系统组件的功能减少或诸如校准丢失的软故障。 以这种方式进行诊断自检不仅可以检查冲击传感系统的电气连续性，还可以检查传感系统的机械完整性和校准。
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公开(公告)号：US5404749A
公开(公告)日：1995-04-11
申请号：US43671
申请日：1993-04-07
申请人： Leland J. Spangler
发明人： Leland J. Spangler
CPC分类号： G01P15/125 , G01P1/003 , G01P15/0802 , G01P2015/0831
摘要： A sense element is provided which has a boron doped silicon body positioned above and parallel to a substrate with a plurality of openings extending through the semiconductive body, the plurality of openings producing a damping such that the natural frequency and the measurement bandwidth of the sense element are modified. Also provided is a capacitive sense element for an accelerometer having a dielectric substrate with at least two fixed conductive plates thereon, a boron doped silicon body positioned above and parallel to the substrate, the body having a pedestal attached to the substrate and surrounded by an internal opening in the body, a first upper plate and a second upper plate corresponding to the fixed conductive plates to form a first and a second capacitor, and a pair of oppositely directed torsion arms connecting the body to the pedestal and forming a flexure axis around which the first and second upper plates deflect in response to an acceleration normal to the sense element to produce a difference between the capacitances of the first and second capacitors.
摘要翻译： 提供了一种感测元件，其具有位于衬底上方并平行于具有延伸穿过半导体本体的多个开口的硼掺杂硅体，所述多个开口产生阻尼，使得感测元件的固有频率和测量带宽 被修改。 还提供了一种用于加速度计的电容感测元件，其具有在其上具有至少两个固定导电板的电介质基底，位于衬底上方并平行于衬底的硼掺杂硅体，该主体具有附接到衬底并被内部 在主体中开口，第一上板和对应于固定导电板的第二上板，以形成第一和第二电容器，以及一对相对定向的扭转臂，将扭转臂连接到基座并形成弯曲轴线 第一和第二上板响应于垂直于感测元件的加速度而偏转，以产生第一和第二电容器的电容之间的差。
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公开(公告)号：US5587518A
公开(公告)日：1996-12-24
申请号：US363767
申请日：1994-12-23
IPC分类号： G01P15/125 , G01P21/00
CPC分类号： G01P21/00 , G01P15/125 , G01P2015/0831
摘要： A micro-machined accelerometer includes a moveable metal plate, mounted upon a semiconductor substrate. The moveable metal plate includes an aperture which contains a pedestal and at least one torsion bar for connecting the pedestal to the moveable metal plate. Measurement electrodes formed on the semiconductor substrate combine with the metal plate to form measurement capacitors. A combined self-test/common electrode provides a dual function of a common electrode during operation of the accelerometer and a testing electrode during a self-test procedure.
摘要翻译： 微加工的加速度计包括安装在半导体衬底上的可移动金属板。 可移动金属板包括一个孔，该孔包含基座和至少一个用于将基座连接到可移动金属板的扭杆。 形成在半导体衬底上的测量电极与金属板组合以形成测量电容器。 组合的自检/公共电极在自检过程期间在加速度计和测试电极的操作期间提供公共电极的双重功能。
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公开(公告)号：US5337260A
公开(公告)日：1994-08-09
申请号：US89179
申请日：1993-07-12
申请人： Leland J. Spangler
发明人： Leland J. Spangler
CPC分类号： B60R21/0132
摘要： A method for calibrating an impact sensor enables calibration to take place after sensor manufacture is completed. During calibration, the sensor undergoes an acceleration while vehicle specific calibration values are programmed into sensor memory for different incremental rates of acceleration. Calibration verification checks to verify that the relationship between acceleration and sensor output is linear. The calibration also includes a hysteresis test by comparing output values when incrementally increasing the acceleration to corresponding acceleration values while incrementally decreasing acceleration. The calibration method may also include calculating a response time for a self-test circuit that can be stored in memory and later used during self-tests of the sensor.
摘要翻译： 用于校准冲击传感器的方法使传感器制造完成后能进行校准。 在校准期间，传感器经历加速，而车辆特定的校准值被编程到传感器存储器中，用于不同的增量加速度。 校准验证检查以验证加速度和传感器输出之间的关系是线性的。 校准还包括通过在逐渐增加加速度到相应加速度值同时逐渐减小加速度时比较输出值的滞后测试。 校准方法还可以包括计算可以存储在存储器中并随后在传感器的自检期间使用的自检电路的响应时间。
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