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    Low-error fixed-width modified booth multiplier
    2.
    发明授权
    Low-error fixed-width modified booth multiplier 失效
    低错误的固定宽度修改的展位乘数

    公开(公告)号：US06978426B2

    公开(公告)日：2005-12-20

    申请号：US10231179

    申请日：2002-08-30

    申请人： Keshab K. Parhi ,  Jin-Gyun Chung ,  Kwang-Cheol Lee ,  Kyung-Ju Cho

    发明人： Keshab K. Parhi ,  Jin-Gyun Chung ,  Kwang-Cheol Lee ,  Kyung-Ju Cho

    IPC分类号： G06F7/499 ,  G06F7/52 ,  G06F7/533 ,  G06F17/50

    CPC分类号： G06F7/49947 ,  G06F7/49942 ,  G06F7/5338

    摘要： A low-error fixed-width multiplier receives a W-bit input and produces a W-bit product. In an embodiment, a multiplier (Y) is encoded using modified Booth coding. The encoded multiplier (Y) and a multiplicand (X) are processed together to generate partial products. The partial products are accumulated to generate a product (P). To compensate for the quantization error, Booth encoder outputs are used for the generation of error compensation bias. The truncated bits are divided into two groups, a major least significant bit group and a minor least significant bit group, depending upon their effects on the quantization error. Different error compensation methods are applied to each group.

    摘要翻译： 低误差固定宽度乘法器接收W位输入并产生W位乘积。 在一个实施例中，使用修改的布斯编码对乘法器（Y）进行编码。 编码乘法器（Y）和被乘数（X）被一起处理以产生部分乘积。 部分产品积累以产生产品（P）。 为了补偿量化误差，布斯编码器输出用于产生误差补偿偏置。 取决于它们对量化误差的影响，截断的比特被分成两组，主要的最低有效位组和次要的最低有效位组。 对每个组应用不同的误差补偿方法。

    SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 审中-公开

    公开(公告)号：US20100283079A1

    公开(公告)日：2010-11-11

    申请号：US12837293

    申请日：2010-07-15

    申请人： Yong Seok CHOI ,  Kwang Cheol Lee

    发明人： Yong Seok CHOI ,  Kwang Cheol Lee

    IPC分类号： H01L33/58

    CPC分类号： H01L33/486 ,  H01L33/48 ,  H01L33/483 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device package including a main body including a supporting member and an outside member on the supporting member; at least one semiconductor light emitting device disposed on the supporting member in which the outside member at least partially surrounds the at least one semiconductor light emitting device; first and second electrodes, at least one electrode of the first and second electrodes at least partially extending under the at least one semiconductor light emitting device; a metallic member disposed under the at least one semiconductor light emitting device and extending beyond outside edges of the at least one semiconductor light emitting device; a first molding part surrounded by the outside member and covering the at least one semiconductor light emitting device; and a second molding part disposed on the first molding part, the second molding part formed in a domed shape. Further, the first and second electrodes also extend to a bottom surface of the supporting member.

    LIGHT EMITTING DEVICE
    5.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20090001392A1

    公开(公告)日：2009-01-01

    申请号：US12145252

    申请日：2008-06-24

    申请人： Kwang Cheol LEE

    发明人： Kwang Cheol LEE

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/50 ,  H01L2224/48091 ,  Y10S362/80 ,  H01L2924/00014

    摘要： A light emitting device is provided. The light emitting device comprises: a package body comprising a multilayer cavity; a first light emitting part comprising a first light emitting device in a first cavity of a first layer area of the multilayer cavity; and a second light emitting part comprising a second light emitting device in a second cavity of a second layer area higher than the first layer area.

    摘要翻译： 提供了一种发光器件。 发光器件包括：包括多层腔的封装体; 第一发光部分，其包括在所述多层腔的第一层区域的第一腔中的第一发光器件; 以及第二发光部分，其包括在高于第一层区域的第二层区域的第二腔中的第二发光器件。

    QUANTUM-BASED FORCE REALIZATION APPARATUS AND FORCE MEASURER USING THE SAME
    7.
    发明申请
    QUANTUM-BASED FORCE REALIZATION APPARATUS AND FORCE MEASURER USING THE SAME 有权
    基于量子的力实现装置和使用它的力测量装置

    公开(公告)号：US20080047367A1

    公开(公告)日：2008-02-28

    申请号：US11696264

    申请日：2007-04-04

    申请人： Jae-hyuk CHOI ,  Min-seok KIM ,  Yon-kyu PARK ,  Kwang-cheol LEE ,  Mahn-soo CHOI

    发明人： Jae-hyuk CHOI ,  Min-seok KIM ,  Yon-kyu PARK ,  Kwang-cheol LEE ,  Mahn-soo CHOI

    IPC分类号： G01R33/02 ,  G01L1/04

    CPC分类号： G01R33/0358 ,  G01L1/005

    摘要： Disclosed herein are a force realization apparatus using a superconducting flux quantum, which is capable of generating force proportional to a flux quantum number by including a micron-sized superconducting annulus or superconducting quantum interference device in an ultra-sensitive cantilever, and a force measurer using the same. The quantum-based force realization apparatus includes: superconducting quantum trap means having a magnetic moment proportional to a flux quantum number; an ultra-sensitive cantilever which mounts therein the superconducting quantum trap means, has elasticity and is displaced by force generated by the superconducting quantum trap means located in a magnetic field gradient; and a magnetic field generator which applies a magnetic field to the superconducting quantum trap means.

    摘要翻译： 本文公开了一种使用超导通量量子的力实现装置，其能够通过在超灵敏悬臂中包括微米级的超导环形或超导量子干涉装置而产生与通量量子数成比例的力，以及使用 一样。 量子力实现装置包括：具有与磁通量子数成正比的磁矩的超导量子阱装置; 其中安装有超导量子阱装置的超灵敏悬臂具有弹性并由位于磁场梯度的超导量子阱装置产生的力移位; 以及向超导量子阱装置施加磁场的磁场发生器。

    Light emitting diode having multi-cell structure and method of manufacturing the same
    8.
    发明授权
    Light emitting diode having multi-cell structure and method of manufacturing the same 有权
    具有多单元结构的发光二极管及其制造方法

    公开(公告)号：US08710520B2

    公开(公告)日：2014-04-29

    申请号：US13504522

    申请日：2010-11-02

    申请人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    发明人： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    IPC分类号： H01L33/36

    CPC分类号： H01L33/60 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016

    摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

    摘要翻译： 公开了具有包括多个单电池的多单元结构的发光二极管。 发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率 。 即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

    Light emitting device
    9.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08089079B2

    公开(公告)日：2012-01-03

    申请号：US12145252

    申请日：2008-06-24

    申请人： Kwang Cheol Lee

    发明人： Kwang Cheol Lee

    IPC分类号： H01L29/20 ,  H01L33/00

    CPC分类号： H01L25/0753 ,  H01L33/50 ,  H01L2224/48091 ,  Y10S362/80 ,  H01L2924/00014

    摘要： A light emitting device includes a package body including a multilayer cavity; a first light emitting part including a first light emitting device in a first cavity of a first layer area of the multilayer cavity, and a second light emitting part including a second light emitting device in a second cavity of a second layer area higher than the first layer area.

    摘要翻译： 发光器件包括：包括多层腔的封装体; 第一发光部分，其包括在所述多层腔的第一层区域的第一腔中的第一发光器件，以及包括第二发光器件的第二发光器件，所述第二发光器件包括在第二发光器件的第二腔中， 层面积。