Optical device and method for manufacturing same
    1.
    发明授权
    Optical device and method for manufacturing same 有权
    光学装置及其制造方法

    公开(公告)号:US09444006B2

    公开(公告)日:2016-09-13

    申请号:US14117613

    申请日:2012-08-14

    摘要: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.

    摘要翻译: 提供了一种光学器件及其制造方法。 根据本发明的光学装置包括:透明非晶基板; 形成在所述基板上的电流注入层; 形成在电流注入层上的石墨层; 以及形成在所述石墨层上的半导体单元,其中,在所述非晶基板上形成所述石墨层之后形成所述半导体单元,从而克服了涉及在非晶基板上形成半导体单元的常规方法的问题,以及所述半导体单元 本发明具有优异的结晶度。

    OPTICAL DEVICE AND METHOD FOR MANUFACTURING SAME
    3.
    发明申请
    OPTICAL DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光学装置及其制造方法

    公开(公告)号:US20140291690A1

    公开(公告)日:2014-10-02

    申请号:US14117613

    申请日:2012-08-14

    IPC分类号: H01L33/24 H01L33/32 H01L33/00

    摘要: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.

    摘要翻译: 提供了一种光学器件及其制造方法。 根据本发明的光学装置包括:透明非晶基板; 形成在所述基板上的电流注入层; 形成在电流注入层上的石墨层; 以及形成在所述石墨层上的半导体单元,其中,在所述非晶基板上形成所述石墨层之后形成所述半导体单元,从而克服了涉及在非晶基板上形成半导体单元的常规方法的问题,以及所述半导体单元 本发明具有优异的结晶度。