公开(公告)号：US07893311B2

公开(公告)日：2011-02-22

申请号：US12067037

申请日：2006-09-14

申请人： Yoshikazu Takamatsu ,  Kouji Nomura

发明人： Yoshikazu Takamatsu ,  Kouji Nomura

IPC分类号： C07C4/06

CPC分类号： B01J29/44 ,  B01J29/068 ,  B01J29/072 ,  B01J35/002 ,  B01J37/0009 ,  B01J2229/42 ,  C07C4/06 ,  C10G11/05 ,  C10G11/10 ,  C10G2300/1088 ,  C10G2300/4018 ,  C10G2400/20 ,  Y02P20/52 ,  Y02P20/584 ,  C07C11/04 ,  C07C11/06

摘要： The invention is to provide a catalyst excellent in product producibility and selectivity, and in coking degradation resistance and regeneration degradation resistance, which is for production of ethylene and propylene through catalytic conversion from a hydrocarbon material. The invention relates to a method for producing ethylene and propylene through catalytic conversion from an olefin, by contacting a hydrocarbon material with a zeolite-containing shaped catalyst satisfying the following requirements (1) to (6), in a reactor: (1) the zeolite is an intermediate pore-size zeolite having a pore size of from 5 to 6.5 angstroms, (2) the zeolite does not substantially contain a proton, (3) the zeolite contains at least one metal selected from the group consisting of metals belonging to the Group IB of the Periodic Table, (4) the zeolite-containing shaped catalyst comprises silica as a binder, (5) the zeolite-containing shaped catalyst has a side-crush strength of at least 2.5 N/mm, (6) the zeolite-containing shaped catalyst has a sodium content of 500 ppm or less as an H-exchange type thereof.

摘要翻译： 本发明提供一种产品生产性和选择性优异，耐焦化降解性和再生降解性优异的催化剂，其通过从烃类材料的催化转化而生产乙烯和丙烯。 本发明涉及一种通过从烯烃催化转化生产乙烯和丙烯的方法，通过在反应器中使烃材料与满足以下要求（1）至（6）的含沸石成型催化剂接触：（1） 沸石是孔径为5至6.5埃的中等孔径沸石，（2）沸石基本上不含质子，（3）沸石含有选自属于 （4）含沸石的成型催化剂包括二氧化硅作为粘合剂，（5）含沸石的成形催化剂的侧面压碎强度为至少2.5N / mm，（6） 含沸石的成形催化剂的H交换型的钠含量为500ppm以下。

公开(公告)号：US20050094931A1

公开(公告)日：2005-05-05

申请号：US10501893

申请日：2003-01-20

申请人： Kazuo Yokoyama ,  Katsuhiko Asai ,  Yousuke Irie ,  Shinichiro Aoki ,  Kouji Nomura ,  Katsuya Morinaka

发明人： Kazuo Yokoyama ,  Katsuhiko Asai ,  Yousuke Irie ,  Shinichiro Aoki ,  Kouji Nomura ,  Katsuya Morinaka

IPC分类号： B81B3/00 ,  G02B6/35 ,  G02B26/08 ,  G02B6/26

CPC分类号： G02B6/3578 ,  G02B6/352 ,  G02B6/3556 ,  G02B6/356 ,  G02B6/3566 ,  G02B26/0858

摘要： On a substrate are configured piezoelectric elements composed of a mirror device, piezoelectric thin films, electrodes, and elastic members, and application of a voltage to the electrodes causes flexure deformation in the piezoelectric thin films, so that the mirror device is actuated. A plurality of the piezoelectric elements are arranged in parallel with a longitudinal direction thereof, and torsion springs are provided so as to extend in a direction orthogonal to the longitudinal direction and so as to hold the mirror device in connection with the substrate. The mirror device is connected to the piezoelectric elements through strain absorbers. In such a configuration, the torsion springs serve as a rotation axis, and the mirror device is inclined about the rotation axis.

摘要翻译： 在基板上配置由反射镜装置，压电薄膜，电极和弹性部件构成的压电元件，并且向电极施加电压引起压电薄膜的弯曲变形，使得反射镜装置被致动。 多个压电元件与其长度方向平行地布置，并且扭转弹簧设置成在与纵向方向正交的方向上延伸，并且保持反射镜装置与基板连接。 镜装置通过应变吸收器连接到压电元件。 在这种构造中，扭转弹簧用作旋转轴，并且反射镜装置围绕旋转轴线倾斜。

公开(公告)号：US06207605B1

公开(公告)日：2001-03-27

申请号：US08905409

申请日：1997-08-04

申请人： Masatsugu Kawase ,  Kouji Nomura ,  Yukito Nagamori ,  Jiro Kinoshita

发明人： Masatsugu Kawase ,  Kouji Nomura ,  Yukito Nagamori ,  Jiro Kinoshita

IPC分类号： B01J2904

CPC分类号： C10G11/05 ,  B01J29/70 ,  B01J2229/16 ,  B01J2229/36 ,  C10G35/095

摘要： A high silica content zeolite-based catalyst for use in a reaction which uses a feedstock containing an aromatic hydrocarbon or which gives a product containing an aromatic hydrocarbon, which catalyst satisfies the following requirements (1), (2), (3) and (4): (1) the zeolite constituting a zeolite-based catalyst has an SiO2/Al2O3 molar ratio of from 20 to 200; (2) the zeolite constituting a zeolite-based catalyst has a primary particle diameter of from 0.3 to 3 &mgr;m; (3) when a zeolite-based catalyst is converted into H type, the H type zeolite-based catalyst has a ratio of the number of surface acid sites to the total number of acid sites is from 0.03 to 0.15; and (4) a zeolite-based catalyst exhibits a pyridine-desorbed amount (B) as measured at a temperature of from 500° C. to 900° C. by a hot desorption method when converted into H type after being subjected to a steam treatment at an H2O partial pressure of 0.8 atm and a temperature of 650° C. for 5 hours, and a pyridine-desorbed amount (A) as measured at a temperature of from 500° C. to 900° C. by a hot desorption method when converted into H type without the steam treatment, which amounts satisfy the following requirements: &agr;≦1.6 α = ( 1 B 2 - 1 A 2 ) ÷ 5 × 10 5 .

摘要翻译： 用于反应中的高二氧化硅含量的沸石基催化剂，其使用含有芳族烃的原料或产生含有芳族烃的产物，该催化剂满足以下要求（1），（2），（3）和（ 4）：（1）构成沸石型催化剂的沸石的SiO 2 / Al 2 O 3摩尔比为20〜200; （2）构成沸石型催化剂的沸石的初级粒径为0.3〜3μm; （3）当沸石型催化剂转化为H型时，H型沸石型催化剂的表面酸性位数与酸性位置总数之比为0.03〜0.15; 和（4）沸石型催化剂在通过热脱附法在500℃〜900℃的温度下测定的吡啶解吸量（B）后，在经受蒸汽后变为H型时 在H 2 O分压为0.8atm，温度为650℃下处理5小时，并通过热解吸在500℃至900℃的温度下测定吡啶解吸量（A） 方法转换为H型无蒸汽处理，其数量满足以下要求：

公开(公告)号：US20090263945A1

公开(公告)日：2009-10-22

申请号：US12492648

申请日：2009-06-26

申请人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

发明人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857

摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

摘要翻译： 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。

公开(公告)号：US07884257B2

公开(公告)日：2011-02-08

申请号：US12066991

申请日：2006-09-14

申请人： Yoshikazu Takamatsu ,  Kouji Nomura

发明人： Yoshikazu Takamatsu ,  Kouji Nomura

IPC分类号： C07C4/06

CPC分类号： B01J29/44 ,  B01J29/068 ,  B01J29/072 ,  B01J37/0009 ,  B01J2229/42 ,  C07C4/06 ,  C10G11/02 ,  C10G11/05 ,  C10G11/10 ,  C10G2300/1088 ,  C10G2300/4018 ,  C10G2400/20 ,  Y02P20/52 ,  C07C11/04 ,  C07C11/06

摘要： The invention is to provide a catalyst for long-term, high-yield and stable production of ethylene and propylene in an efficient and simple method of catalytic conversion from a hydrocarbon material. The invention relates to a method for producing ethylene and propylene by contacting a hydrocarbon material that contains an olefin having from 4 to 12 carbon atoms in an amount of at least 20% by weight, with a zeolite-containing shaped catalyst satisfying the following requirements (1) to (4), in a reactor for catalytic conversion of that olefin: (1) the zeolite is an intermediate pore-size zeolite having a pore size of from 5 to 6.5 angstroms, (2) the zeolite does not substantially contain a proton, (3) the zeolite contains at least one metal selected from the group consisting of metals belonging to the Group IB of the Periodic Table, (4) the zeolite has a silica/alumina molar ratio (SiO2/Al2O3 molar ratio) of from 800 to 2,000.

摘要翻译： 本发明提供一种用于从烃类材料进行催化转化的有效且简单的方法中长期，高产率和稳定地生产乙烯和丙烯的催化剂。 本发明涉及一种生产乙烯和丙烯的方法，该方法是将含有至少20重量％的含有4-12个碳原子的烯烃的烃材料与满足以下要求的含沸石成型催化剂 1）至（4）中，在该烯烃的催化转化反应器中：（1）沸石是孔径为5至6.5埃的中间孔径沸石，（2）沸石基本上不含有 质子，（3）沸石含有选自属于元素周期表第IB族的金属中的至少一种金属，（4）沸石的二氧化硅/氧化铝摩尔比（SiO 2 / Al 2 O 3摩尔比）为 800至2,000。

公开(公告)号：US07569890B2

公开(公告)日：2009-08-04

申请号：US11409081

申请日：2006-04-24

申请人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

发明人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC分类号： H01L23/62

CPC分类号： H01L21/823857

摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

摘要翻译： 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。

公开(公告)号：US20060273401A1

公开(公告)日：2006-12-07

申请号：US11409081

申请日：2006-04-24

申请人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

发明人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC分类号： H01L29/94

CPC分类号： H01L21/823857

摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

公开(公告)号：US06911566B2

公开(公告)日：2005-06-28

申请号：US10469513

申请日：2002-03-01

申请人： Takashi Tsunoda ,  Kouji Nomura

发明人： Takashi Tsunoda ,  Kouji Nomura

IPC分类号： B01J21/00 ,  B01J29/84 ,  C07C29/141 ,  C07C45/64 ,  C07C31/20 ,  C07C29/14 ,  C07C31/18 ,  C07C29/241

CPC分类号： C07C29/141 ,  B01J21/00 ,  B01J29/65 ,  B01J29/84 ,  B01J29/85 ,  C07C45/64 ,  C07C47/19 ,  C07C31/205

摘要： A process for producing 1,3-propanediol, comprising: hydrating acrolein in a liquid phase in the presence of a hydration catalyst to form 3-hydroxypropanal; separating any unreacted acrolein, if any is present; and carrying out catalytic hydrogenation of the 3-hydroxypropanal in a liquid or gas phase with a hydrogenation catalyst, wherein the hydration catalyst is a catalyst comprising at least one member selected from the group consisting of the following materials (a) to (c) and has a pH of 6 or less at 20° C., when made into a slurry by dispersing the catalyst in a quantity of water 5 times as much as the quantity of catalyst by weight: (a) a metalloaluminophosphate molecular sieve, (b) an FER type zeolite, and (c) an oxide or compound oxide, excluding crystalline aluminosilicate zeolites, which comprises one or more element(s) selected from the elements belonging to group 4, group 13 and group 14 of the periodic table.

摘要翻译： 一种生产1,3-丙二醇的方法，包括：在水合催化剂存在下，将液相中的丙烯醛水合，形成3-羟基丙醛; 分离任何未反应的丙烯醛（如果有的话） 并用氢化催化剂在液相或气相中进行3-羟基丙醛的催化氢化，其中所述水合催化剂是包含选自以下材料（a）至（c）和 在20℃时pH为6以下，当通过将催化剂分散到催化剂的量的5倍量的水中制成浆料时：（a）金属铝磷酸盐分子筛，（b） FER型沸石，和（c）不包括结晶硅铝酸盐沸石的氧化物或复合氧化物，其包含选自元素周期表第4族，第13族和第14族的元素的一种或多种元素。

公开(公告)号：US06222302B1

公开(公告)日：2001-04-24

申请号：US09163348

申请日：1998-09-30

申请人： Katsumi Imada ,  Katsunori Moritoki ,  Takeshi Masutani ,  Kouji Nomura ,  Kouji Kawakita

发明人： Katsumi Imada ,  Katsunori Moritoki ,  Takeshi Masutani ,  Kouji Nomura ,  Kouji Kawakita

IPC分类号： H01L4108

CPC分类号： H01L41/094

摘要： The drive section made by bonding the piezoelectric material on part of the elastic shim and the displacement amplifying section which amplifies the amplitude of vibration vibrated in the drive section are provided in the same plane. The device is driven at drive frequencies in a region between the resonance frequency of the drive section and the resonance frequency of the displacement amplifying section.

摘要翻译： 通过将弹性垫片的一部分上的压电材料和放大在驱动部分中振动的振动幅度放大的位移放大部分接合而制成的驱动部分设置在同一平面中。 该装置在驱动部分的谐振频率与位移放大部分的谐振频率之间的区域中以驱动频率驱动。

公开(公告)号：US08739591B2

公开(公告)日：2014-06-03

申请号：US11885376

申请日：2006-02-28

申请人： Shuhei Ogura ,  Kouji Nomura ,  Mikiji Suzuki ,  Yuki Doi ,  Takayuki Shimizu ,  Shinji Terada ,  Kiyoshi Shinki ,  Hideya Kimura ,  Yoshinori Tanaka

发明人： Shuhei Ogura ,  Kouji Nomura ,  Mikiji Suzuki ,  Yuki Doi ,  Takayuki Shimizu ,  Shinji Terada ,  Kiyoshi Shinki ,  Hideya Kimura ,  Yoshinori Tanaka

IPC分类号： B21D31/00

CPC分类号： B23K11/3063

摘要： There are provided an electrode tip dressing apparatus and an electrode tip dressing tool for resistance welding, which are miniaturized by reducing a rotational driving-force of a dressing tool. By adjusting a curvature radius of a dressing portion 4 of a dressing tool 2, a contact width, wherein a top electrode tip 5 abuts to the dressing portion 4 of the dressing tool 2, is adjusted from a rotational center of the dressing tool 2 to the outer side of the dressing tool 2. Dressing work done with the dressing tool 2 is thus made to be constant at the whole area of the dressing portion 4, from the rotational center of the dressing tool 2 to the outer side of the dressing tool 2. Accordingly, excess dressing work, which brings decline of productivity, can be avoided, thus enabling to dress the top electrode tip 5 with the minimal dressing work. A rotational driving-power of the dressing tool 2 is thereby reduced, enabling to labor-save and miniaturize the electrode tip dressing apparatus.

摘要翻译： 提供了一种用于电阻焊接的电极头修整装置和电极头修整工具，其通过减少修整工具的旋转驱动力而小型化。 通过调节修整工具2的修整部分4的曲率半径，其中顶部电极末端5邻接修整工具2的修整部分4的接触宽度从修整工具2的旋转中心被调整到 修整工具2的外侧。因此，使修整工具2完成的修整工作在修整部分4的整个区域中从修整工具2的旋转中心到修整工具的外侧是恒定的 因此，可以避免产生生产率下降的多余的修整工作，从而能够以最小的修整作业来装饰顶部电极末端5。 因此，修整工具2的旋转驱动力降低，能够省电并且使电极末端修整装置小型化。