摘要:
The invention is to provide a catalyst excellent in product producibility and selectivity, and in coking degradation resistance and regeneration degradation resistance, which is for production of ethylene and propylene through catalytic conversion from a hydrocarbon material. The invention relates to a method for producing ethylene and propylene through catalytic conversion from an olefin, by contacting a hydrocarbon material with a zeolite-containing shaped catalyst satisfying the following requirements (1) to (6), in a reactor: (1) the zeolite is an intermediate pore-size zeolite having a pore size of from 5 to 6.5 angstroms, (2) the zeolite does not substantially contain a proton, (3) the zeolite contains at least one metal selected from the group consisting of metals belonging to the Group IB of the Periodic Table, (4) the zeolite-containing shaped catalyst comprises silica as a binder, (5) the zeolite-containing shaped catalyst has a side-crush strength of at least 2.5 N/mm, (6) the zeolite-containing shaped catalyst has a sodium content of 500 ppm or less as an H-exchange type thereof.
摘要:
On a substrate are configured piezoelectric elements composed of a mirror device, piezoelectric thin films, electrodes, and elastic members, and application of a voltage to the electrodes causes flexure deformation in the piezoelectric thin films, so that the mirror device is actuated. A plurality of the piezoelectric elements are arranged in parallel with a longitudinal direction thereof, and torsion springs are provided so as to extend in a direction orthogonal to the longitudinal direction and so as to hold the mirror device in connection with the substrate. The mirror device is connected to the piezoelectric elements through strain absorbers. In such a configuration, the torsion springs serve as a rotation axis, and the mirror device is inclined about the rotation axis.
摘要:
A high silica content zeolite-based catalyst for use in a reaction which uses a feedstock containing an aromatic hydrocarbon or which gives a product containing an aromatic hydrocarbon, which catalyst satisfies the following requirements (1), (2), (3) and (4): (1) the zeolite constituting a zeolite-based catalyst has an SiO2/Al2O3 molar ratio of from 20 to 200; (2) the zeolite constituting a zeolite-based catalyst has a primary particle diameter of from 0.3 to 3 &mgr;m; (3) when a zeolite-based catalyst is converted into H type, the H type zeolite-based catalyst has a ratio of the number of surface acid sites to the total number of acid sites is from 0.03 to 0.15; and (4) a zeolite-based catalyst exhibits a pyridine-desorbed amount (B) as measured at a temperature of from 500° C. to 900° C. by a hot desorption method when converted into H type after being subjected to a steam treatment at an H2O partial pressure of 0.8 atm and a temperature of 650° C. for 5 hours, and a pyridine-desorbed amount (A) as measured at a temperature of from 500° C. to 900° C. by a hot desorption method when converted into H type without the steam treatment, which amounts satisfy the following requirements: &agr;≦1.6 α = ( 1 B 2 - 1 A 2 ) ÷ 5 × 10 5 .
摘要翻译:用于反应中的高二氧化硅含量的沸石基催化剂,其使用含有芳族烃的原料或产生含有芳族烃的产物,该催化剂满足以下要求(1),(2),(3)和( 4):(1)构成沸石型催化剂的沸石的SiO 2 / Al 2 O 3摩尔比为20〜200; (2)构成沸石型催化剂的沸石的初级粒径为0.3〜3μm; (3)当沸石型催化剂转化为H型时,H型沸石型催化剂的表面酸性位数与酸性位置总数之比为0.03〜0.15; 和(4)沸石型催化剂在通过热脱附法在500℃〜900℃的温度下测定的吡啶解吸量(B)后,在经受蒸汽后变为H型时 在H 2 O分压为0.8atm,温度为650℃下处理5小时,并通过热解吸在500℃至900℃的温度下测定吡啶解吸量(A) 方法转换为H型无蒸汽处理,其数量满足以下要求:
摘要:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要:
The invention is to provide a catalyst for long-term, high-yield and stable production of ethylene and propylene in an efficient and simple method of catalytic conversion from a hydrocarbon material. The invention relates to a method for producing ethylene and propylene by contacting a hydrocarbon material that contains an olefin having from 4 to 12 carbon atoms in an amount of at least 20% by weight, with a zeolite-containing shaped catalyst satisfying the following requirements (1) to (4), in a reactor for catalytic conversion of that olefin: (1) the zeolite is an intermediate pore-size zeolite having a pore size of from 5 to 6.5 angstroms, (2) the zeolite does not substantially contain a proton, (3) the zeolite contains at least one metal selected from the group consisting of metals belonging to the Group IB of the Periodic Table, (4) the zeolite has a silica/alumina molar ratio (SiO2/Al2O3 molar ratio) of from 800 to 2,000.
摘要翻译:本发明提供一种用于从烃类材料进行催化转化的有效且简单的方法中长期,高产率和稳定地生产乙烯和丙烯的催化剂。 本发明涉及一种生产乙烯和丙烯的方法,该方法是将含有至少20重量%的含有4-12个碳原子的烯烃的烃材料与满足以下要求的含沸石成型催化剂 1)至(4)中,在该烯烃的催化转化反应器中:(1)沸石是孔径为5至6.5埃的中间孔径沸石,(2)沸石基本上不含有 质子,(3)沸石含有选自属于元素周期表第IB族的金属中的至少一种金属,(4)沸石的二氧化硅/氧化铝摩尔比(SiO 2 / Al 2 O 3摩尔比)为 800至2,000。
摘要:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要:
A process for producing 1,3-propanediol, comprising: hydrating acrolein in a liquid phase in the presence of a hydration catalyst to form 3-hydroxypropanal; separating any unreacted acrolein, if any is present; and carrying out catalytic hydrogenation of the 3-hydroxypropanal in a liquid or gas phase with a hydrogenation catalyst, wherein the hydration catalyst is a catalyst comprising at least one member selected from the group consisting of the following materials (a) to (c) and has a pH of 6 or less at 20° C., when made into a slurry by dispersing the catalyst in a quantity of water 5 times as much as the quantity of catalyst by weight: (a) a metalloaluminophosphate molecular sieve, (b) an FER type zeolite, and (c) an oxide or compound oxide, excluding crystalline aluminosilicate zeolites, which comprises one or more element(s) selected from the elements belonging to group 4, group 13 and group 14 of the periodic table.
摘要:
The drive section made by bonding the piezoelectric material on part of the elastic shim and the displacement amplifying section which amplifies the amplitude of vibration vibrated in the drive section are provided in the same plane. The device is driven at drive frequencies in a region between the resonance frequency of the drive section and the resonance frequency of the displacement amplifying section.
摘要:
There are provided an electrode tip dressing apparatus and an electrode tip dressing tool for resistance welding, which are miniaturized by reducing a rotational driving-force of a dressing tool. By adjusting a curvature radius of a dressing portion 4 of a dressing tool 2, a contact width, wherein a top electrode tip 5 abuts to the dressing portion 4 of the dressing tool 2, is adjusted from a rotational center of the dressing tool 2 to the outer side of the dressing tool 2. Dressing work done with the dressing tool 2 is thus made to be constant at the whole area of the dressing portion 4, from the rotational center of the dressing tool 2 to the outer side of the dressing tool 2. Accordingly, excess dressing work, which brings decline of productivity, can be avoided, thus enabling to dress the top electrode tip 5 with the minimal dressing work. A rotational driving-power of the dressing tool 2 is thereby reduced, enabling to labor-save and miniaturize the electrode tip dressing apparatus.