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1.发明申请FORMATION METHOD OF HEXAGONAL BORON NITRIDE THICK FILM ON A SUBSTRATE AND HEXAGONAL BORON NITRIDE THICK FILM LAMINATES THEREBY 审中-公开基底上的六方硼酸盐薄膜的形成方法和六方硼氮化物厚膜层压板公开(公告)号：US20160281221A1
公开(公告)日：2016-09-29
申请号：US15055290
申请日：2016-02-26
发明人： Soo-Min KIM , Ki-Kang KIM , Joo-Song Lee
CPC分类号： C23C16/342 , C01B21/0641 , C01P2002/82 , C01P2004/01 , C01P2004/03 , C01P2004/04 , C23C16/01 , C23C16/0209 , C23C16/56 , C25B1/02
摘要： The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film
摘要翻译： 本发明涉及在基板上制造多层六方氮化硼（h-BN）厚膜的方法，更具体地说，涉及一种在基板上形成多层h-BN厚膜的方法，该方法包括：（a） （b）将h-BN前体供应到加热的第一基底的h-BN前体供应步骤，（c）将所供应的h-BN前体溶解在第一基底中的前体溶解步骤， 以及（d）将含有溶解的h-BN前体的第一基板冷却的基板冷却工序，以及包含通过制备方法制备的多层h-BN厚膜的层压体和形成具有h- BN厚膜
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公开(公告)号：US10113230B2
公开(公告)日：2018-10-30
申请号：US15055290
申请日：2016-02-26
发明人： Soo-Min Kim , Ki-Kang Kim , Joo-Song Lee
摘要： The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film.
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3.发明申请公开(公告)号：US20020051895A1
公开(公告)日：2002-05-02
申请号：US09947208
申请日：2001-09-04
发明人： Hyun Nam Cho , Young Chul Kim , Jae-Min Hong , Jong-Bok Kim , Doo Kyung Moon , Young Sei Park , Ho Seong Nam
IPC分类号： H05B033/12 , C08G061/00
CPC分类号： H01L51/0043 , C08G61/02 , C08L65/00 , C09K11/06 , H01L51/0035 , H01L51/0038 , H01L51/0039 , Y10S428/917
摘要： A fluorene-based polymer of the following Formula (I) and electroluminescent devices using the same. 1 wherein, R1, R2, R3 and R4 are same or different and represent hydrogen, aliphatic or alicyclic alkyl or alkoxy groups containing 1 to 22 carbon atoms, aryl or aryloxy group containing 6 to 18 carbon atoms, cyano, cyanoethyl, or an alkyl or aryl derivatives of silicon, tin or germanium; X represents diacetylene, diethynyl aryl, divinylaryl group or a single bond; and n is an integer equal to or grater than 1.
摘要翻译： 下式（I）的芴类聚合物和使用其的电致发光器件。 其中，R 1，R 2，R 3和R 4相同或不同，表示氢，含有1至22个碳原子的脂族或脂环族烷基或烷氧基，含有6至18个碳原子的芳基或芳氧基，氰基，氰基乙基或烷基或 硅，锡或锗的芳基衍生物; X表示乙炔基，二乙炔基芳基，二乙烯基芳基或单键; n是等于或大于1的整数。
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公开(公告)号：US20240269139A1
公开(公告)日：2024-08-15
申请号：US18033872
申请日：2021-10-26
发明人： Nathanael S. Gray , Eric S. Fischer , Fleur M. Ferguson , Katherine Donovan , Jonathan W. Bushman , Taebo Sim , Debabrata Bhunia , SeongShick Ryu
IPC分类号： A61K31/506 , A61K31/4725 , A61K31/5025 , A61K31/519 , A61K31/55 , G01N33/50
CPC分类号： A61K31/506 , A61K31/4725 , A61K31/5025 , A61K31/519 , A61K31/55 , G01N33/502 , G01N2333/912 , G01N2560/00 , G01N2570/00
摘要： The present invention relates to bifunctional compounds for targeted kinase degradation, methods for treating diseases or conditions mediated by aberrant kinase activity, and methods for identifying degradable kinases and optimal kinase:scaffold pairs.
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