公开(公告)号：US20110298072A1

公开(公告)日：2011-12-08

申请号：US12794101

申请日：2010-06-04

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US08709854B2

公开(公告)日：2014-04-29

申请号：US13620016

申请日：2012-09-14

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC: H01L21/00

CPC classification number: H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract translation: BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

公开(公告)号：US08614495B2

公开(公告)日：2013-12-24

申请号：US12766149

申请日：2010-04-23

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Yeur-Luen Tu ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Chung Chien Wang

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Yeur-Luen Tu ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Chung Chien Wang

IPC: H01L31/0236

CPC classification number: H01L31/1872 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器还包括形成在基板中的放射线检测装置。 放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括再结晶硅层。 重结晶的硅层形成在基板的背面。 重结晶的硅层的光致发光强度不同于衬底。

公开(公告)号：US20110260280A1

公开(公告)日：2011-10-27

申请号：US12766149

申请日：2010-04-23

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Yeur-Luen Tu ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Chung Chien Wang

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Yeur-Luen Tu ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Chung Chien Wang

IPC: H01L31/102 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/1872 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器还包括形成在基板中的放射线检测装置。 放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括再结晶硅层。 重结晶的硅层形成在基板的背面。 重结晶的硅层的光致发光强度不同于衬底。

公开(公告)号：US09356058B2

公开(公告)日：2016-05-31

申请号：US13597007

申请日：2012-08-28

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC: H01L21/311 ,  H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685

Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

Abstract translation: 用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除 通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。 一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层， 在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

公开(公告)号：US20130299931A1

公开(公告)日：2013-11-14

申请号：US13597007

申请日：2012-08-28

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC: H01L31/0232

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685

Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

Abstract translation: 用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除 通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。 一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层， 在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

公开(公告)号：US20130299886A1

公开(公告)日：2013-11-14

申请号：US13620016

申请日：2012-09-14

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract translation: BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

公开(公告)号：US08405182B2

公开(公告)日：2013-03-26

申请号：US13099092

申请日：2011-05-02

Applicant: Keng-Yu Chou ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Pao-Tung Cheng ,  Wen-De Wang ,  Chun-Chieh Chuang ,  Min-Feng Kao

Inventor： Keng-Yu Chou ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Pao-Tung Cheng ,  Wen-De Wang ,  Chun-Chieh Chuang ,  Min-Feng Kao

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。

公开(公告)号：US08981510B2

公开(公告)日：2015-03-17

申请号：US12794101

申请日：2010-06-04

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US20120280348A1

公开(公告)日：2012-11-08

申请号：US13099092

申请日：2011-05-02

Applicant: Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

Inventor： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。