摘要:
A resin-coated metallic pigment in which a coating layer constituted of a single layer or a plurality of layers is formed on a surface of a base particle, an outermost layer of the coating layer being composed of a resin which is a polymer containing one or more compounds selected from a monomer and an oligomer having two or more polymerizable double bonds as a constituent unit, and a surface portion of the outermost layer being treated with a surface modifier which is a compound having one polymerizable double bond.
摘要:
A metal-coated flake glass of the present invention includes: a flake glass; a metal coating layer formed to coat a surface of the flake glass; and a silicon oxide-based protective layer formed to coat a surface of the metal coating layer. The silicon oxide-based protective layer contains nitrogen at an amount of 0.05 mass % to 0.5 mass % relative to a whole of the metal-coated flake glass.
摘要:
A pass transistor circuit of the present invention includes a plurality of pass transistor sections having pass transistor logics and has a logic functionality which is based on a pass transistor logic functionality of a plurality of pass transistor sections. One or more of the pass transistor sections is a CMOSFET formed of a p-type MOSFET and an n-type MOSFET. At least one of the p-type MOSFET and the n-type MOSFET of the CMOSFET is a transistor having a TFT structure.
摘要:
Embodiments of this invention provide a disposable wearing article facilitating even an aged person having relatively weak forth to pull a waist-opening periphery in the transverse direction to widen the waist-opening to a desired size, despite this and the waist region should not slip down during use of the wearing article. Waist elastic elements (36) are stretched in the transverse direction X at a stretch ratio in a range of about 2.5 to about 3.0 and having fineness in a range of about 800 to about 1000 dtex, a dimension between the waist elastic elements (36) adjacent in the transverse direction X is in a range of about 5.5 to about 6.0 mm and each of waist elastic regions (38) in which the waist elastic elements (36) are present has a tensile stress at a moment of 255% stretching in the transverse direction X in a range of about 4.5 to about 6.0N/35 mm and a tensile stress at a moment of 167% stretching in the transverse direction is in a range of about 1.7 to about 2.1N/35 mm.
摘要:
In a pants-type diaper, two folding lines which are extensive in a longitudinal direction and which are spaced in a widthwise direction are formed at an absorber that is disposed in a crotch region A of the pants-type diaper. A plurality of compression lines which are extensive in the widthwise direction and which are spaced in the longitudinal direction are formed in a predetermined region of the absorber. An angle formed by a centerline in a widthwise direction in the compression lines and the widthwise direction is configured so as to be included in a range of 0 degrees to 45 degrees. Two of the compression lines are adjacent to each other in the longitudinal direction are configured so as to approach at a predetermined portion.
摘要:
A metal-coated flake glass of the present invention includes: a flake glass; a metal coating layer formed to coat a surface of the flake glass; and a silicon oxide-based protective layer formed to coat a surface of the metal coating layer. The silicon oxide-based protective layer contains nitrogen at an amount of 0.05 mass % to 0.5 mass % relative to a whole of the metal-coated flake glass.
摘要:
The metal pigment of the present invention has a structure in which an organic carboxylic acid metal salt is adhered onto metal particles, and may also have a structure in which a first compound is adhered onto the metal particles, and the organic carboxylic acid metal salt is adhered onto the first compound.
摘要:
Embodiments of this invention provide a disposable wearing article facilitating even an aged person having relatively weak forth to pull a waist-opening periphery in the transverse direction to widen the waist-opening to a desired size, despite this and the waist region should not slip down during use of the wearing article. Waist elastic elements (36) are stretched in the transverse direction X at a stretch ratio in a range of about 2.5 to about 3.0 and having fineness in a range of about 800 to about 1000 dtex, a dimension between the waist elastic elements (36) adjacent in the transverse direction X is in a range of about 5.5 to about 6.0 mm and each of waist elastic regions (38) in which the waist elastic elements (36) are present has a tensile stress at a moment of 255% stretching in the transverse direction X in a range of about 4.5 to about 6.0N/35 mm and a tensile stress at a moment of 167% stretching in the transverse direction is in a range of about 1.7 to about 2.1N/35 mm.
摘要:
A lithographic printing plate printer includes: an original-film loading section; a lithographic printing plate loading section; a printing surface plate on which an original film is brought into close contact with a lithographic printing plate; a light source for printing an image on the original film onto the lithographic printing plate on the printing surface plate; a punch-hole punching unit for punching a punch hole in the original film; an original film transporting unit for taking out the original film in the original-film loading section and transporting it onto the printing surface plate via the punch-hole punching means; and a lithographic printing plate transporting unit for taking out the lithographic printing plate in the lithographic printing plate loading section and transporting it onto the printing surface plate.
摘要:
A gate array is provided which includes a semiconductor substrate having a main surface. The main surface includes a cell region and a channel region adjacent to the cell region. A cell column including a plurality of basic cells arranged regularly is provided in the cell region. A first interconnecting line is provided in the channel region for connecting the basic cells. In accordance with the gate array, as the first interconnecting line is formed in the channel region in advance for connecting the basic cells, it is not necessary to form a first interconnecting line when manufacturing a semiconductor integrated circuit device. Accordingly, the time period for development of a semiconductor integrated circuit device can be reduced as compared with a case where conventional basic cells are used.