公开(公告)号：US09780097B2

公开(公告)日：2017-10-03

申请号：US14965316

申请日：2015-12-10

Applicant: Kyo-Wook Lee ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

Inventor： Kyo-Wook Lee ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

IPC: H01L27/11 ,  H01L29/78

CPC classification number: H01L27/1104 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first to eighth gate structures. The first and second gate structures are on the first, second and fourth active fins, and extend in a second direction crossing the first direction. The third and fourth gate structures are on the first, second and third active fins, and extend in the second direction. The fifth and sixth gate structures are on the third active fin, and extend in the second direction. The seventh and eighth gate structures are on the fourth active fin, and extend in the second direction. The sixth gate structure is electrically connected to the third gate structure through the first contact plug, and the seventh gate structure is electrically connected to the second gate structure through a second contact plug.

公开(公告)号：US20160190141A1

公开(公告)日：2016-06-30

申请号：US14965316

申请日：2015-12-10

Applicant: KYO-WOOK LEE ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

Inventor： KYO-WOOK LEE ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

IPC: H01L27/11 ,  H01L29/78 ,  H01L23/48

CPC classification number: H01L27/1104 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first to eighth gate structures. The first and second gate structures are on the first, second and fourth active fins, and extend in a second direction crossing the first direction. The third and fourth gate structures are on the first, second and third active fins, and extend in the second direction. The fifth and sixth gate structures are on the third active fin, and extend in the second direction. The seventh and eighth gate structures are on the fourth active fin, and extend in the second direction. The sixth gate structure is electrically connected to the third gate structure through the first contact plug, and the seventh gate structure is electrically connected to the second gate structure through a second contact plug.

Abstract translation: 双端口SRAM器件包括具有场区域和在第一方向上延伸的第一至第四活性鳍片的衬底和具有第一至第八栅极结构的单元电池。 第一和第二栅极结构在第一，第二和第四活性鳍片上，并且沿与第一方向交叉的第二方向延伸。 第三和第四栅极结构在第一，第二和第三活性鳍片上，并且在第二方向上延伸。 第五和第六栅极结构在第三活性鳍上，并且在第二方向上延伸。 第七和第八栅极结构在第四活性鳍上，并沿第二方向延伸。 第六栅极结构通过第一接触插塞电连接到第三栅极结构，并且第七栅极结构通过第二接触插塞电连接到第二栅极结构。