公开(公告)号：US07664152B2

公开(公告)日：2010-02-16

申请号：US11763640

申请日：2007-06-15

Applicant: Junichi Horie

Inventor： Junichi Horie

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0202 ,  H01S5/0425

Abstract: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.

Abstract translation: 半导体激光装置具有通过Au镀层形成的前表面电极，通过Au镀覆形成的后表面电极，在前表面电极或后表面电极上的防粘膜，并且由不与Au反应的材料制成， 以及覆盖发光侧的端面和与发光侧相反的端面的涂膜。 防粘膜可以至少位于前表面电极或后表面电极的四个角处。

公开(公告)号：US20090317976A1

公开(公告)日：2009-12-24

申请号：US12256019

申请日：2008-10-22

Applicant: Junichi Horie

Inventor： Junichi Horie

IPC: H01L21/311

CPC classification number: H01J37/321 ,  H01J37/32174

Abstract: An etching system includes: a vacuum chamber; a stage for mounting a workpiece, the stage being disposed within the vacuum chamber; a first electrode located within the vacuum chamber and above the stage; a second located between the first electrode and a ceiling of the vacuum chamber; a gas supply for introducing a process gas into the vacuum chamber; a variable capacitance element connected to the second electrode; and a radio frequency power supply connected to the first electrode and connected through the variable capacitance element to the second electrode. The radio frequency power supply supplies radio frequency power to the first and second electrodes to produce an inductively coupled plasma in the process gas within the vacuum chamber.

Abstract translation: 蚀刻系统包括：真空室; 用于安装工件的台，所述台设置在所述真空室内; 位于真空室内并位于载物台上方的第一电极; 位于所述第一电极和所述真空室的天花板之间的第二位置; 用于将工艺气体引入真空室中的气体供给装置; 连接到所述第二电极的可变电容元件; 和连接到第一电极并通过可变电容元件连接到第二电极的射频电源。 射频电源向第一和第二电极提供射频功率，以在真空室内的处理气体中产生电感耦合等离子体。

公开(公告)号：US07624633B2

公开(公告)日：2009-12-01

申请号：US11854130

申请日：2007-09-12

Applicant: Keiichi Nakada ,  Junichi Horie ,  Hiroshi Nakano ,  Izumi Watanabe

Inventor： Keiichi Nakada ,  Junichi Horie ,  Hiroshi Nakano ,  Izumi Watanabe

IPC: G01F1/68

CPC classification number: G01F1/699 ,  G01F1/6842 ,  G01F1/692

Abstract: A thermal-type fluid flow sensor comprises a heating resistor formed on a thin film of a substrate, and plural thermal sensitive resistors configuring a bridge circuit. The thermal sensitive resistors are disposed on the thin film of the substrate so as to be located on an adjacent upstream side and an adjacent downstream side of the heating resistor in a stream direction of fluid to be measured. Resistor traces for the thermal sensitive resistors are formed so that the respective thermal sensitive resistors exhibit substantially equal changes in resistance with each other to distortion caused in the thin film.

Abstract translation: 热式流体流量传感器包括形成在基板的薄膜上的加热电阻器和构成桥接电路的多个热敏电阻器。 热敏电阻器设置在基板的薄膜上，以便沿着待测流体的流动方向位于加热电阻器的相邻上游侧和相邻的下游侧。 形成用于热敏电阻器的电阻迹线，使得相应的热敏电阻器在薄膜中产生的失真相对于电阻变化相当大。

公开(公告)号：US07395707B2

公开(公告)日：2008-07-08

申请号：US11505987

申请日：2006-08-18

Applicant: Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

Inventor： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC: G01F1/68

CPC classification number: G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

Abstract translation: 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。

公开(公告)号：US07228614B2

公开(公告)日：2007-06-12

申请号：US11088175

申请日：2005-03-24

Applicant: Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

Inventor： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

IPC: H04R31/00

CPC classification number: G01F1/692 ,  G01F1/6845 ,  Y10T29/49002 ,  Y10T29/49007 ,  Y10T29/4902

Abstract: A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.

Abstract translation: 能够减少长期变化的气体流量计包括形成有空腔的硅半导体衬底和通过绝缘膜形成在半导体衬底的空腔上方的加热元件。 热元件是以高浓度杂质掺杂的硅（Si）半导体薄膜。 在上面形成作为在热元件的发热温度范围内较少渗透并且较少吸收氢的阻挡层的化学计量稳定的氮化硅（Si 3 N 4 N 4）薄膜， 在硅（Si）半导体薄膜之下。

公开(公告)号：US20050268713A1

公开(公告)日：2005-12-08

申请号：US11187823

申请日：2005-07-25

Applicant: Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

Inventor： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC: G01F1/684 ,  F02D35/00 ,  F02D41/18 ,  F02D45/00 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699 ,  G01F1/68

CPC classification number: G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

Abstract translation: 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。

公开(公告)号：US20050132814A1

公开(公告)日：2005-06-23

申请号：US11049872

申请日：2005-02-04

Applicant: Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

Inventor： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

IPC: B81B3/00 ,  B81B7/00 ,  G01L7/08 ,  G01L9/00 ,  H01L21/00

CPC classification number: B81C1/00333 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

Abstract: The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

Abstract translation: 本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器 生产力和耐久性。 在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。 此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。 这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。 此外，具有小膜应力的密封材料减小了隔膜的时间变形。

公开(公告)号：US06877383B2

公开(公告)日：2005-04-12

申请号：US10247637

申请日：2002-09-20

Applicant: Junichi Horie ,  Yasuo Onose ,  Norio Ichikawa ,  Seiji Kuryu ,  Satoshi Shimada ,  Akihiko Saito ,  Keiji Hanzawa ,  Masahiro Matsumoto ,  Hiroshi Moriya ,  Akio Yasukawa ,  Atsushi Miyazaki

Inventor： Junichi Horie ,  Yasuo Onose ,  Norio Ichikawa ,  Seiji Kuryu ,  Satoshi Shimada ,  Akihiko Saito ,  Keiji Hanzawa ,  Masahiro Matsumoto ,  Hiroshi Moriya ,  Akio Yasukawa ,  Atsushi Miyazaki

IPC: G01L9/00 ,  G01L9/12

CPC classification number: G01L9/0073

Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

Abstract translation: 通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。 压力传感器测量误差小，浮动电容和漏电流小，特性好。 作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。 隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。

公开(公告)号：US5676851A

公开(公告)日：1997-10-14

申请号：US723875

申请日：1996-09-23

Applicant: Masayoshi Suzuki ,  Takao Sasayama ,  Keizi Hanzawa ,  Norio Ichikawa ,  Junichi Horie ,  Yukiko Sugisawa ,  Yuuji Ogasawara

Inventor： Masayoshi Suzuki ,  Takao Sasayama ,  Keizi Hanzawa ,  Norio Ichikawa ,  Junichi Horie ,  Yukiko Sugisawa ,  Yuuji Ogasawara

IPC: G01P1/02 ,  G01P15/125 ,  B44C1/22 ,  H01L21/00

CPC classification number: G01P1/023 ,  G01P15/125 ,  G01P2015/0828

Abstract: A capacitance acceleration sensor and method of making same are disclosed. A capacitance acceleration sensor includes a movable electrode etched from a silicon plate which is clamped between two solid dielectric plate members of glass, silicon oxides, or oxygen oxides. Static electrodes are secured to surfaces of the dielectric members facing opposite the movable electrode, thereby providing easy manufacturing assessibility for leadout wires from these electrodes. In certain embodiments, the movable electrode is formed integrally with a monocrystalline silicon plate member which also contains an integrated circuit for generating an output acceleration signal in response to movement of the movable electrode when the assembly experiences acceleration forces.

Abstract translation: 公开了一种电容加速度传感器及其制造方法。 电容加速度传感器包括从硅板蚀刻的可移动电极，其被夹在玻璃，氧化硅或氧化物的两个固体电介质板构件之间。 静电极固定在与可动电极相对的电介质元件的表面上，从而为这些电极提供引出线的易制造评估。 在某些实施例中，可移动电极与单晶硅板构件整体形成，该单晶硅板构件还包含用于当组件经受加速力时响应于可移动电极的移动而产生输出加速度信号的集成电路。

公开(公告)号：US20080198889A1

公开(公告)日：2008-08-21

申请号：US11763640

申请日：2007-06-15

Applicant: Junichi Horie

Inventor： Junichi Horie

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0202 ,  H01S5/0425

Abstract: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.

Abstract translation: 半导体激光装置具有通过Au镀层形成的前表面电极，通过Au镀覆形成的后表面电极，在前表面电极或后表面电极上的防粘膜，并且由不与Au反应的材料制成， 以及覆盖发光侧的端面和与发光侧相反的端面的涂膜。 防粘膜可以至少位于前表面电极或后表面电极的四个角处。