公开(公告)号：US07755003B2

公开(公告)日：2010-07-13

申请号：US11965093

申请日：2007-12-27

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： C21D1/40 ,  H05B3/68 ,  H05B1/02

CPC分类号： H01L21/67248

摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.

摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。

公开(公告)号：US20080156785A1

公开(公告)日：2008-07-03

申请号：US11965093

申请日：2007-12-27

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： H01L21/00 ,  H05B3/68

CPC分类号： H01L21/67248

摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.

摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。

公开(公告)号：US20050170087A1

公开(公告)日：2005-08-04

申请号：US11091760

申请日：2005-03-29

申请人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

发明人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

IPC分类号： B05D1/00 ,  B05D1/02 ,  H01L21/00 ,  B05D3/12

CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D1/02

摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.

公开(公告)号：US20120031892A1

公开(公告)日：2012-02-09

申请号：US13192635

申请日：2011-07-28

申请人： Kenichi Shigetomi ,  Jun Ookura

发明人： Kenichi Shigetomi ,  Jun Ookura

IPC分类号： H05B3/68

CPC分类号： H05B1/0233 ,  H01L21/67248

摘要： Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.

摘要翻译： 公开了一种包括第一工艺和第二工艺的热处理方法。 第一晶片（初始晶片）W1和第二晶片（下一个晶片）W2（和随后的晶片W）之间的第一过程包括将加热板的设定温度从第一温度改变到低于第一温度的第二温度 ; 以及在所述加热板的温度达到第二温度之前对第一基板进行热处理。 第二工序是在第一基板的第一工序结束后，将加热板的设定温度从第二温度变更为高于第二温度的第三温度; 以及在所述加热板的温度达到第三温度之后，当所述加热板的温度从第三温度变为第二温度时，对第二基板进行热处理。

公开(公告)号：US20050016818A1

公开(公告)日：2005-01-27

申请号：US10859340

申请日：2004-06-03

申请人： Kazuhiko Ito ,  Kazutoshi Ishimaru ,  Jun Ookura ,  Michio Kinoshita ,  Yuichi Douki

发明人： Kazuhiko Ito ,  Kazutoshi Ishimaru ,  Jun Ookura ,  Michio Kinoshita ,  Yuichi Douki

IPC分类号： H01L21/68 ,  B05B12/12 ,  B05B13/02 ,  H01L21/00

CPC分类号： H01L21/67259 ,  B05B12/122 ,  B05B13/0228 ,  Y10S414/136

摘要： A substrate processing apparatus can align a substrate with a high precision and a high speed by monitoring a mark formed on a surface of the substrate; operating an amount of misalignment between the center of the substrate and a rotation center of a substrate support member; determining a presence of the misalignment and adjusting the substrate such that the center of the substrate coincides with the rotation center of the substrate support member.

公开(公告)号：US06654668B1

公开(公告)日：2003-11-25

申请号：US09502580

申请日：2000-02-11

申请人： Koji Harada ,  Hisakazu Nakayama ,  Jun Ookura

发明人： Koji Harada ,  Hisakazu Nakayama ,  Jun Ookura

IPC分类号： G05D2300

CPC分类号： H01L21/67259 ,  H01L21/67248

摘要： The temperature of a hot plate is not more than a predetermined threshold when a wafer is accurately mounted at a substrate mounting position on the hot plate, whereas the temperature of the hot plate is the predetermined threshold when the wafer is not accurately mounted at the substrate mounting position on the hot plate. Therefore, when the temperature of the hot plate is not less than the predetermined threshold when the wafer is mounted on the hot plate, it is judged that the wafer is stranded on a guide, and an alarm is given by means of a speaker or a display section.

摘要翻译： 当晶片准确地安装在热板上的基板安装位置时，热板的温度不超过预定的阈值，而当热晶片的温度不准确地安装在基板上时，热板的温度是预定的阈值 安装位置在热板上。 因此，当晶片安装在热板上时，当热板的温度不低于预定阈值时，判断晶片搁在引导件上，并通过扬声器或 显示部分。

公开(公告)号：US06620245B2

公开(公告)日：2003-09-16

申请号：US09893707

申请日：2001-06-29

申请人： Seiki Ishida ,  Junichi Iwano ,  Jun Ookura ,  Michishige Saito

发明人： Seiki Ishida ,  Junichi Iwano ,  Jun Ookura ,  Michishige Saito

IPC分类号： B05C1100

CPC分类号： H01L21/6715 ,  H01L21/67248

摘要： An apparatus for processing a substrate of the present invention comprises a holder holding a substrate, a supply pipe being supplied with a processing solution from a first end and supplying the processing solution to the substrate from a second end, a first temperature controller having a first temperature controlled water circulated inside which controls a first temperature around the second end of the supply pipe and a second temperature controller having a second temperature controlled water drained from the first temperature controller circulated inside, which controls a second temperature around the first end of the supply pipe. With such a configuration, the temperature controlled water used for controlling the temperature of the processing solution just before its application onto the substrate can be recycled for controlling the temperature of the processing solution just after being supplied to a supply pipe.

摘要翻译： 本发明的基板的处理装置包括保持基板的保持器，从第一端供给处理液并从第二端向基板供给的供给管，第一温度控制器，具有第一 循环在其内的温度控制的水控制围绕供应管的第二端的第一温度;以及第二温度控制器，具有从第一温度控制器排出的第二温度控制的水，该第一温度控制器在内部循环，第一温度控制水围绕供应的第一端控制第二温度 管。 通过这样的结构，用于控制刚刚施加到基板上的处理液的温度的温度控制水可以再循环，以便在供给到供给管之后控制处理溶液的温度。

公开(公告)号：US07868270B2

公开(公告)日：2011-01-11

申请号：US12022522

申请日：2008-01-30

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： H05B3/68

CPC分类号： H01L21/67248 ,  H01L21/67178 ,  H01L21/67748

摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

摘要翻译： 在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度， 其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。 所述方法包括：获取调整数据，所述调整数据用于调整由用于将所述基板的温度从初始温度附近的第一温度升至围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。

公开(公告)号：US07488505B2

公开(公告)日：2009-02-10

申请号：US10885577

申请日：2004-07-08

申请人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

发明人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

IPC分类号： B05D3/12

CPC分类号： H01L21/67253 ,  B05D1/005 ,  B05D1/26 ,  H01L21/6715

摘要： When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and auxiliary nozzles separately movable, and monitoring means for monitoring the state of the surface of the substrate to detect the occurrence of an uncoated region on the surface of the substrate. On the basis of previously prepared coating data, a coating liquid is spirally applied on the substrate by the main nozzle. Then, if the monitoring means detects the occurrence of the uncoated region in a coated region in which the coating liquid has been applied by the main nozzle, a control part detects whether it is required to supply the coating liquid to the uncoated region. If it is required, the coating liquid is supplied to the uncoated region by the auxiliary nozzle. On the other hand, the portion of occurrence of the uncoated region has been grasped by the control part. If the uncoated region is continuously detected at the same place with respect to two substrates, it is determined that the setting of coating data is erroneous, and this is modified.

公开(公告)号：US20080283515A1

公开(公告)日：2008-11-20

申请号：US12022522

申请日：2008-01-30

申请人： Jun OOKURA ,  Eiichi SEKIMOTO ,  Hisakazu NAKAYAMA

发明人： Jun OOKURA ,  Eiichi SEKIMOTO ,  Hisakazu NAKAYAMA

IPC分类号： H05B3/68 ,  F27B9/04

CPC分类号： H01L21/67248 ,  H01L21/67178 ,  H01L21/67748

摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

摘要翻译： 在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度， 其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。 所述方法包括：获取调整数据，所述调整数据调整由用于将所述基板的温度从初始温度附近的第一温度提高到围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。