公开(公告)号：US20130206992A1

公开(公告)日：2013-08-15

申请号：US13820575

申请日：2011-06-24

Applicant: Jong Han Jin ,  Jae Wan Kim ,  Jong Ahn Kim ,  Chu-Shik Kang

Inventor： Jong Han Jin ,  Jae Wan Kim ,  Jong Ahn Kim ,  Chu-Shik Kang

IPC: G01B11/22 ,  G01B11/12

CPC classification number: G01B11/22 ,  G01B9/02008 ,  G01B11/12 ,  G01B2210/56 ,  G01N21/9501 ,  G01N2021/95653

Abstract: The present invention pertains to a device and a method for measuring a via hole of a silicon wafer, wherein it is possible to precisely measure the depth of the via hole without damaging the wafer. Broadband infrared light is radiated to a silicon wafer which has a superior light transmission property, so that the depth of the via hole may be measured from the light which is reflected from each boundary surface of the wafer and the interference signal of reference light. The via hole measuring device according to the present invention includes: a light source unit for generating broadband infrared light; and an interferometer for radiating the light generated from the light source unit to a silicon wafer, so as to measure the depth of a via hole formed on the wafer according to the spectrum period of the interference signal of the light, which is reflected from the silicon wafer.

Abstract translation: 本发明涉及用于测量硅晶片的通孔的装置和方法，其中可以精确地测量通孔的深度而不损坏晶片。 宽带红外光被照射到具有优异的透光性的硅晶片，从而可以从从晶片的每个边界面反射的光和参考光的干涉信号测量通孔的深度。 根据本发明的通孔测量装置包括：用于产生宽带红外光的光源单元; 以及干涉仪，用于将从光源单元产生的光发射到硅晶片，以便根据光的干涉信号的光谱周期来测量形成在晶片上的通孔的深度，该距离从 硅晶片。

公开(公告)号：US08009350B2

公开(公告)日：2011-08-30

申请号：US12366634

申请日：2009-02-05

Applicant: Seung-Woo Kim ,  Jong-Han Jin ,  Seung-Chul Kim ,  In-Yong Park

Inventor： Seung-Woo Kim ,  Jong-Han Jin ,  Seung-Chul Kim ,  In-Yong Park

IPC: G02F2/02 ,  G02F1/35 ,  H01S3/10

CPC classification number: G02F1/353 ,  G02F2001/354 ,  G02F2203/10 ,  H01S3/0092 ,  H01S3/1625 ,  H01S3/1636

Abstract: Disclosed herein is a laptop-size high-order harmonic generation apparatus using near field enhancement. The laptop-size high-order harmonic generation apparatus using near field enhancement includes a femtosecond laser generator, light transfer means for transferring light output from the femtosecond laser generator, micro patterns formed of metallic thin films and configured to have nano-sized apertures for generating near field enhancement when the light output from the light transfer means passes through the micro patterns, a gas supply unit for supplying inert gas to the light when the light transferred through the light transfer means passes through the micro patterns, and a vacuum chamber for accommodating the micro patterns and the gas supply unit under a vacuum atmosphere.

Abstract translation: 本文公开了一种使用近场增强的笔记本电脑大型高次谐波产生装置。 使用近场增强的膝上型计算机大型高次谐波发生装置包括飞秒激光发生器，用于传送从飞秒激光发生器输出的光的光传输装置，由金属薄膜形成的微图案，并且被配置为具有用于产生的纳米尺寸的孔 当来自光传输装置的光输出通过微图案时的近场增强;气体供应单元，用于当通过光传输装置转移的光通过微图形时，向光提供惰性气体;以及真空室，用于容纳 微图案和气体供应单元在真空气氛下。

公开(公告)号：US20100098118A1

公开(公告)日：2010-04-22

申请号：US12366634

申请日：2009-02-05

Applicant: Seung-Woo Kim ,  Jong-Han Jin ,  Seung-Chul Kim ,  In-Yong Park

Inventor： Seung-Woo Kim ,  Jong-Han Jin ,  Seung-Chul Kim ,  In-Yong Park

IPC: H01S3/10 ,  H01S3/22

CPC classification number: G02F1/353 ,  G02F2001/354 ,  G02F2203/10 ,  H01S3/0092 ,  H01S3/1625 ,  H01S3/1636

Abstract: Disclosed herein is a laptop-size high-order harmonic generation apparatus using near field enhancement. The laptop-size high-order harmonic generation apparatus using near field enhancement includes a femtosecond laser generator, light transfer means for transferring light output from the femtosecond laser generator, micro patterns formed of metallic thin films and configured to have nano-sized apertures for generating near field enhancement when the light output from the light transfer means passes through the micro patterns, a gas supply unit for supplying inert gas to the light when the light transferred through the light transfer means passes through the micro patterns, and a vacuum chamber for accommodating the micro patterns and the gas supply unit under a vacuum atmosphere.

Abstract translation: 本文公开了一种使用近场增强的笔记本电脑大型高次谐波产生装置。 使用近场增强的膝上型计算机大型高次谐波发生装置包括飞秒激光发生器，用于传送从飞秒激光发生器输出的光的光传输装置，由金属薄膜形成的微图案，并且被配置为具有用于产生的纳米尺寸的孔 当来自光传输装置的光输出通过微图案时的近场增强;气体供应单元，用于当通过光传输装置转移的光通过微图形时，向光提供惰性气体;以及真空室，用于容纳 微图案和气体供应单元在真空气氛下。

公开(公告)号：US09121696B2

公开(公告)日：2015-09-01

申请号：US13820575

申请日：2011-06-24

Applicant: Jong Han Jin ,  Jae Wan Kim ,  Jong Ahn Kim ,  Chu-Shik Kang

Inventor： Jong Han Jin ,  Jae Wan Kim ,  Jong Ahn Kim ,  Chu-Shik Kang

IPC: G01J5/02 ,  G01B11/22 ,  G01B11/12 ,  G01B9/02 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01B11/22 ,  G01B9/02008 ,  G01B11/12 ,  G01B2210/56 ,  G01N21/9501 ,  G01N2021/95653

Abstract: The present invention pertains to a device and a method for measuring a via hole of a silicon wafer, wherein it is possible to precisely measure the depth of the via hole without damaging the wafer. Broadband infrared light is radiated to a silicon wafer which has a superior light transmission property, so that the depth of the via hole may be measured from the light which is reflected from each boundary surface of the wafer and the interference signal of reference light. The via hole measuring device according to the present invention includes: a light source unit for generating broadband infrared light; and an interferometer for radiating the light generated from the light source unit to a silicon wafer, so as to measure the depth of a via hole formed on the wafer according to the spectrum period of the interference signal of the light, which is reflected from the silicon wafer.

Abstract translation: 本发明涉及用于测量硅晶片的通孔的装置和方法，其中可以精确地测量通孔的深度而不损坏晶片。 宽带红外光被照射到具有优异的透光性的硅晶片，从而可以从从晶片的每个边界面反射的光和参考光的干涉信号测量通孔的深度。 根据本发明的通孔测量装置包括：用于产生宽带红外光的光源单元; 以及干涉仪，用于将从光源单元产生的光发射到硅晶片，以便根据光的干涉信号的光谱周期来测量形成在晶片上的通孔的深度，该距离从 硅晶片。