公开(公告)号：US20230197804A1

公开(公告)日：2023-06-22

申请号：US17556627

申请日：2021-12-20

申请人： Nazila HARATIPOUR ,  Gilbert DEWEY ,  I-Cheng TUNG ,  Nancy ZELICK ,  Chi-Hing CHOI ,  Jitendra Kumar JHA ,  Jack T. KAVALIEROS

发明人： Nazila HARATIPOUR ,  Gilbert DEWEY ,  I-Cheng TUNG ,  Nancy ZELICK ,  Chi-Hing CHOI ,  Jitendra Kumar JHA ,  Jack T. KAVALIEROS

IPC分类号： H01L29/417 ,  H01L29/45

CPC分类号： H01L29/41791 ,  H01L29/45

摘要： Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source or drain structure. The conductive trench contact structure includes a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer.