公开(公告)号：US08598632B2

公开(公告)日：2013-12-03

申请号：US13530679

申请日：2012-06-22

申请人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

IPC分类号： H01L27/118

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.

摘要翻译： 具有不同尺寸特征的集成电路，其中较小特征与具有通过常规光刻形成的尺寸的较大特征具有间距倍增关系。

公开(公告)号：US20060240340A1

公开(公告)日：2006-10-26

申请号：US11471012

申请日：2006-06-20

申请人： Zhiping Yin ,  Jingyi Bai

发明人： Zhiping Yin ,  Jingyi Bai

IPC分类号： G03F1/00

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/091

摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.

摘要翻译： 使用光酸产生剂（PAG）或酸来降低抗污垢和基底。 酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。 抗蚀剂下面的增加的酸层防止酸扩散。 在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。 在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。 高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

公开(公告)号：US20120273854A1

公开(公告)日：2012-11-01

申请号：US13173596

申请日：2011-06-30

申请人： Sergey Velichko ,  Jingyi Bai

发明人： Sergey Velichko ,  Jingyi Bai

IPC分类号： H01L31/113 ,  H01L21/265

CPC分类号： H01L27/1461 ,  H01L21/26586 ,  H01L27/14612 ,  H01L27/14623

摘要： A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.

摘要翻译： 全局快门像素单元包括串联连接的防晕（AB）晶体管，存储栅极（SG）晶体管和传输（TX）晶体管。 串联连接的晶体管耦合在电压源和浮动扩散（FD）区域之间。 光电二极管（PD）的端子连接在AB和SG晶体管的各个端子之间; 并且存储节点（SN）二极管的端子连接在SG和TX晶体管的各个端子之间。 PD区域的一部分在SN区域下延伸，使得PD区域将SN区域与杂散光子屏蔽。 此外，设置在SN区域上方的金属层向下延伸到SN区域，使得金属层将SN区域与杂散光子屏蔽。 此外，金属层的顶表面涂覆有抗反射层。

公开(公告)号：US08048812B2

公开(公告)日：2011-11-01

申请号：US12769071

申请日：2010-04-28

申请人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

IPC分类号： H01L21/302

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate.

摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一模式的较小特征。 通过图案化无定形碳层来实现间距倍增。 然后在非晶碳侧壁上形成侧壁间隔物，然后将其去除; 侧壁间隔物限定第一掩模图案。 然后沉积底部抗反射涂层（BARC）以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，其转移到BARC。 将组合图案转移到下面的非晶硅层。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 然后将组合的掩模图案蚀刻到下面的基底中。

公开(公告)号：US07985692B2

公开(公告)日：2011-07-26

申请号：US12018254

申请日：2008-01-23

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US07884022B2

公开(公告)日：2011-02-08

申请号：US11625165

申请日：2007-01-19

申请人： Jingyi Bai ,  Gurtej S Sandhu ,  Shuang Meng

发明人： Jingyi Bai ,  Gurtej S Sandhu ,  Shuang Meng

IPC分类号： H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

摘要： Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where the mandrels are formed of amorphous carbon and the spacer material is silicon oxide, the silicon oxide is first deposited by a plasma enhanced deposition process and then by a thermal chemical vapor deposition process. Oxygen gas and plasma-enhanced tetraethylorthosilicate (TEOS) are used as reactants in the plasma enhanced process, while ozone and TEOS are used as reactants in the thermal chemical vapor deposition process. The oxygen gas is less reactive with the amorphous carbon than ozone, thereby minimizing deformation of the mandrels caused by oxidation of the amorphous carbon.

摘要翻译： 使用两步法将间隔物材料沉积在心轴上进行间距倍增。 第一步的前体与心轴发生最小的反应，形成抵抗第二步骤沉积过程的化学反应的阻挡层，其使用与心轴更具反应性的前体。 在心轴由非晶碳形成并且间隔物材料是氧化硅的情况下，首先通过等离子体增强沉积工艺沉积氧化硅，然后通过热化学气相沉积工艺沉积。 在等离子体增强过程中使用氧气和等离子体增强的四乙基原硅酸盐（TEOS）作为反应物，而在热化学气相沉积工艺中使用臭氧和TEOS作为反应物。 氧气与无定形碳的反应性低于臭氧，从而最小化由无定形碳的氧化引起的心轴的变形。

公开(公告)号：US20100196807A1

公开(公告)日：2010-08-05

申请号：US12761151

申请日：2010-04-15

申请人： Zhiping Yin ,  Jingyi Bai

发明人： Zhiping Yin ,  Jingyi Bai

IPC分类号： G03F1/00 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/091

摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.

摘要翻译： 使用光酸产生剂（PAG）或酸来降低抗污垢和基底。 酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。 抗蚀剂下面的增加的酸层防止酸扩散。 在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。 在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。 高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

公开(公告)号：US07704673B2

公开(公告)日：2010-04-27

申请号：US11856556

申请日：2007-09-17

申请人： Zhiping Yin ,  Jingyi Bai

发明人： Zhiping Yin ,  Jingyi Bai

IPC分类号： G03F1/00 ,  G03C3/00 ,  G03C5/00 ,  G03C1/76 ,  G03C1/494

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/091

摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.

摘要翻译： 使用光酸产生剂（PAG）或酸来降低抗污垢和基底。 酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。 抗蚀剂下面的增加的酸层防止酸扩散。 在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。 在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。 高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

公开(公告)号：US20080128389A1

公开(公告)日：2008-06-05

申请号：US12018254

申请日：2008-01-23

申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

IPC分类号： B44C1/22

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

公开(公告)号：US20070049018A1

公开(公告)日：2007-03-01

申请号：US11213283

申请日：2005-08-26

申请人： Gurtej Sandhu ,  Max Hineman ,  Daniel Steckert ,  Jingyi Bai ,  Shane Trapp ,  Tony Schrock

发明人： Gurtej Sandhu ,  Max Hineman ,  Daniel Steckert ,  Jingyi Bai ,  Shane Trapp ,  Tony Schrock

IPC分类号： H01L21/44 ,  H01L21/302

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。