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    PHOTOLITHOGRAPHY METHOD INCLUDING TECHNIQUE OF DETERMINING DISTRIBUTION OF ENERGY OF EXPOSURE LIGHT PASSING THROUGH SLIT OF EXPOSURE APPARATUS
    1.
    发明申请
    PHOTOLITHOGRAPHY METHOD INCLUDING TECHNIQUE OF DETERMINING DISTRIBUTION OF ENERGY OF EXPOSURE LIGHT PASSING THROUGH SLIT OF EXPOSURE APPARATUS 有权
    曝光方法包括确定曝光能量分布的技术的光刻方法

    公开(公告)号：US20120244476A1

    公开(公告)日：2012-09-27

    申请号：US13402902

    申请日：2012-02-23

    申请人： JIN-SEOK HEO ,  SEOK-HWAN OH ,  JEONG-HO YEO

    发明人： JIN-SEOK HEO ,  SEOK-HWAN OH ,  JEONG-HO YEO

    IPC分类号： G03F7/20

    CPC分类号： G03F7/20 ,  G03F7/70075 ,  G03F7/70133 ,  G03F7/70608 ,  G03F7/70616

    摘要： The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

    摘要翻译： 确定通过曝光装置的狭缝的曝光光的能量分布。 衬底上的光致抗蚀剂层在多次照射下曝光，同时改变每次射击的曝光光的强度。 然后将光致抗蚀剂层显影以形成样品光致抗蚀剂层。 分析显影样品光致抗蚀剂层的图像的颜色强度。 所选择的一个拍摄中的颜色强度的值与曝光光的强度的值相关，以产生沿着狭缝的长度的曝光光的能量分布。 使用能量分布来改变狭缝，使得当在制造半导体器件的工艺中使用狭缝时可以实现更理想的能量分布。

    METHOD AND APPARATUS FOR DETECTING PRESENCE OF SIGNAL IN WIRELESS COMMUNICATION SYSTEM BASED ON CR TECHNOLOGY
    2.
    发明申请
    METHOD AND APPARATUS FOR DETECTING PRESENCE OF SIGNAL IN WIRELESS COMMUNICATION SYSTEM BASED ON CR TECHNOLOGY 有权
    基于CR技术的无线通信系统信号存在检测方法与装置

    公开(公告)号：US20110286555A1

    公开(公告)日：2011-11-24

    申请号：US12885973

    申请日：2010-09-20

    申请人： Joon Ho Cho ,  Jeong Ho Yeo

    发明人： Joon Ho Cho ,  Jeong Ho Yeo

    IPC分类号： H04L27/06 ,  H04B1/16

    CPC分类号： H04L27/0006 ,  H04L25/021

    摘要： The present invention relates to a method of detecting the presence of a transmission signal of a transmitter in a reception signal in a wireless communication system based on CR technology. The method includes generating a frequency signal vector using a Fourier transform and a reception signal vector obtained by sampling the reception signal at a certain period, finding an eigenvalue and an eigenvector regarding a matrix, obtaining by approximating a covariance matrix of the frequency signal vector using a vectorized Fourier transform result of all channel impulse responses of the transmission signal linearly modulated, calculating a sufficient statistic on a basis of the frequency signal vector, the eigenvalue, and the eigenvector, finding a threshold which is a criterion for determining signal presence detection on a basis of a preset detection probability or a preset false alarm probability and the eigenvalue, and if the sufficient statistic is determined to be greater than the threshold, determining that the transmission signal exists.

    摘要翻译： 本发明涉及一种在基于CR技术的无线通信系统中在接收信号中检测发射机的发射信号的存在的方法。 该方法包括使用傅立叶变换和通过在一定周期对接收信号进行采样而获得的接收信号向量来生成频率信号向量，找到关于矩阵的特征值和特征向量，通过使用以下方式近似获得频率信号向量的协方差矩阵 对传输信号进行线性调制的所有信道脉冲响应的向量化傅里叶变换结果，基于频率信号向量，特征值和特征向量计算足够的统计量，找出作为确定信号存在检测的准则的阈值 预设检测概率或预设假警报概率和特征值的基础，并且如果确定足够的统计量大于阈值，则确定发送信号存在。

    METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS
    3.
    发明申请
    METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS 有权
    安装掩模和相关设备的方法

    公开(公告)号：US20110119644A1

    公开(公告)日：2011-05-19

    申请号：US12968178

    申请日：2010-12-14

    申请人： Dong-woon Park ,  Woo-sung Han ,  Seong-woon Choi ,  Jeong-ho Yeo

    发明人： Dong-woon Park ,  Woo-sung Han ,  Seong-woon Choi ,  Jeong-ho Yeo

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the first pattern and the term ξ is the position of the assist.

    摘要翻译： 公开了响应于第二图案对图像强度的贡献来布置掩模图案的方法和装置。 在布置掩模图案的一些方法中，获得函数h（＆xgr; -x）的分布，其表示第二图案对第一图案上的图像强度的贡献。 将第一模式的相邻区域离散为有限区域，并且用离散化区域的代表值h（x，xgr）替换函数h（＆xgr; -x）的分布。 使用具有相同h（x，xgr））的多边形区域来确定第二图案的位置。 如上所述，术语x是第一模式的位置和术语＆xgr; 是协助的位置。

    Method and apparatus for measuring overlay
    5.
    发明授权
    Method and apparatus for measuring overlay 有权
    测量覆盖层的方法和装置

    公开(公告)号：US08860953B2

    公开(公告)日：2014-10-14

    申请号：US13349770

    申请日：2012-01-13

    申请人： Seong-Bo Shim ,  Jeong-Ho Yeo ,  Ho-Yeon Kim

    发明人： Seong-Bo Shim ,  Jeong-Ho Yeo ,  Ho-Yeon Kim

    IPC分类号： G01B11/00 ,  G01B11/14 ,  G03F7/20

    CPC分类号： G03F7/70633

    摘要： A method of measuring an overlay includes generating an original signal using first and second overlay measurement keys that are spaced apart from each other, generating a first spectrum signal by performing Fourier transform of the original signal, generating a second spectrum signal by filtering the first spectrum signal, and generating a corrected signal by performing inverse Fourier transform of the second spectrum signal.

    摘要翻译： 测量覆盖的方法包括使用彼此间隔开的第一和第二覆盖测量键来产生原始信号，通过执行原始信号的傅里叶变换产生第一频谱信号，通过滤波第一频谱产生第二频谱信号 并通过执行第二频谱信号的傅立叶逆变换产生校正信号。

    Methods of inspecting structures
    6.
    发明授权
    Methods of inspecting structures 有权
    检查结构的方法

    公开(公告)号：US08625110B2

    公开(公告)日：2014-01-07

    申请号：US12662079

    申请日：2010-03-30

    申请人： Seouk-Hoon Woo ,  Jeong-Ho Yeo ,  Byeong-Ok Cho ,  Joo-On Park ,  Chang-Min Park ,  Won-Sun Kim

    发明人： Seouk-Hoon Woo ,  Jeong-Ho Yeo ,  Byeong-Ok Cho ,  Joo-On Park ,  Chang-Min Park ,  Won-Sun Kim

    IPC分类号： G01B11/28

    CPC分类号： G01B11/06 ,  G01B11/02 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/95615 ,  G03F7/70625

    摘要： A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

    摘要翻译： 检查结构的方法。 该方法包括根据参考结构的临界尺寸准备参考衍射强度的初步光谱，从设定的临界尺寸范围内的初步光谱获得线性光谱，将光照射到形成在基板上的各个测量结构，测量测量衍射强度 由测量结构衍射的光，并且使用线性光谱从测量衍射强度获得测量结构的临界尺寸。

    Methods of forming fine patterns using a nanoimprint lithography
    7.
    发明授权
    Methods of forming fine patterns using a nanoimprint lithography 失效
    使用纳米压印光刻形成精细图案的方法

    公开(公告)号：US08287792B2

    公开(公告)日：2012-10-16

    申请号：US12657750

    申请日：2010-01-27

    申请人： Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    发明人： Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    IPC分类号： B29C59/00

    CPC分类号： G03F7/0002 ,  B29C43/003 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00

    摘要： In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

    摘要翻译： 在形成精细图案的方法中，在基板上形成光固化涂层。 模板的第一表面与光固化涂层接触。 模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。 通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。 从第一图案生成第二图案，第二色散度小于第一色散度。 模板与固化涂层分开。 可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

    Method of Aligning a Wafer and Method of Monitoring a Lithography Process Including the Same
    8.
    发明申请
    Method of Aligning a Wafer and Method of Monitoring a Lithography Process Including the Same 审中-公开
    晶圆对准方法和包括其的平版印刷术的监控方法

    公开(公告)号：US20110317163A1

    公开(公告)日：2011-12-29

    申请号：US13166327

    申请日：2011-06-22

    申请人： Seung-Yoon Lee ,  Jeong-Ho Yeo ,  Chan Hwang

    发明人： Seung-Yoon Lee ,  Jeong-Ho Yeo ,  Chan Hwang

    IPC分类号： G01B11/14

    CPC分类号： G03F9/7046

    摘要： A method of aligning a wafer includes irradiating light onto a plurality of alignment marks of a wafer, detecting signals outputted from the alignment marks to obtain alignment position offsets, selecting a set of the alignment marks corresponding to the alignment position offsets having a same or similar distribution, and aligning the wafer based the selected alignment marks.

    摘要翻译： 对准晶片的方法包括将光照射到晶片的多个对准标记上，检测从对准标记输出的信号以获得对准位置偏移，选择与具有相同或相似的对准位置偏移对应的一组对准标记 分布和基于所选择的对准标记对齐晶片。

    Methods of inspecting structures
    10.
    发明申请
    Methods of inspecting structures 有权
    检查结构的方法

    公开(公告)号：US20110007329A1

    公开(公告)日：2011-01-13

    申请号：US12662079

    申请日：2010-03-30

    申请人： Seouk-Hoon Woo ,  Jeong-Ho Yeo ,  Byeong-Ok Cho ,  Joo-On Park ,  Chang-Min Park ,  Won-Sun Kim

    发明人： Seouk-Hoon Woo ,  Jeong-Ho Yeo ,  Byeong-Ok Cho ,  Joo-On Park ,  Chang-Min Park ,  Won-Sun Kim

    IPC分类号： G01B11/06 ,  G01B11/14

    CPC分类号： G01B11/06 ,  G01B11/02 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/95615 ,  G03F7/70625

    摘要： A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

    摘要翻译： 检查结构的方法。 该方法包括根据参考结构的临界尺寸准备参考衍射强度的初步光谱，从设定的临界尺寸范围内的初步光谱获得线性光谱，将光照射到形成在基板上的各个测量结构，测量测量衍射强度 由测量结构衍射的光，并且使用线性光谱从测量衍射强度获得测量结构的临界尺寸。