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    WEARABLE TRAINING DEVICE FOR PITCHING
    1.
    发明申请
    WEARABLE TRAINING DEVICE FOR PITCHING 有权

    公开(公告)号：US20220362648A1

    公开(公告)日：2022-11-17

    申请号：US17662955

    申请日：2022-05-11

    申请人： Jason Jeffrey Snyder

    发明人： Jason Jeffrey Snyder

    IPC分类号： A63B69/00 ,  A63B71/06

    摘要： A movement assessment apparatus in the form of a wearable training apparatus for pitching is provided. The apparatus has a wearable form embodying a transducer device operatively associated with an engagement point along the external surface of the wearable form. A patch may externally cover and thus identify this engagement point. In use, so that when the wearable form is worn on the forearm below the elbow of a human wearer, wherein the patch is facing up and turned slightly inwards, the transducer device will produce a sound when compressed between the forearm and back side of the rib cage of the wearer. This intersection of the forearm and back side of the rib cage is indicative of proper pitching form.

    Measuring seebeck coefficient
    2.
    发明授权
    Measuring seebeck coefficient 有权
    测量贝贝克系数

    公开(公告)号：US09140612B2

    公开(公告)日：2015-09-22

    申请号：US13403835

    申请日：2012-02-23

    申请人： G. Jeffrey Snyder

    发明人： G. Jeffrey Snyder

    IPC分类号： G01K7/00 ,  G01K7/02 ,  G01N25/32

    CPC分类号： G01K7/02 ,  G01N25/32

    摘要： A high temperature Seebeck coefficient measurement apparatus and method with various features to minimize typical sources of errors is described. Common sources of temperature and voltage measurement errors which may impact accurate measurement are identified and reduced. Applying the identified principles, a high temperature Seebeck measurement apparatus and method employing a uniaxial, four-point geometry is described to operate from room temperature up to 1300K. These techniques for non-destructive Seebeck coefficient measurements are simple to operate, and are suitable for bulk samples with a broad range of physical types and shapes.

    摘要翻译： 描述了具有各种特征的高温塞贝克系数测量装置和方法以最小化典型的误差源。 识别和减少可能影响精确测量的常见温度和电压测量误差源。 应用确定的原理，描述了采用单轴四点几何形状的高温塞贝克测量装置和方法，从室温至1300K进行操作。 这些用于非破坏性塞贝克系数测量的技术操作简单，适用于具有广泛物理类型和形状的散装样品。

    n-Type doped PbTe and PbSe alloys for thermoelectric applications
    3.
    发明授权
    n-Type doped PbTe and PbSe alloys for thermoelectric applications 有权
    用于热电应用的n型掺杂PbTe和PbSe合金

    公开(公告)号：US08889028B2

    公开(公告)日：2014-11-18

    申请号：US13463726

    申请日：2012-05-03

    申请人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    发明人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    IPC分类号： H01L35/16 ,  H01L35/34 ,  C01B19/00

    CPC分类号： H01L35/16 ,  C01B19/007 ,  C01P2002/54 ,  C01P2006/40 ,  H01L35/34

    摘要： The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm−3.

    摘要翻译： 本发明表明，载流子的弱散射导致高迁移率，因此有助于实现低电阻率，对于热电材料具有高塞贝克系数。 本发明人通过在n型PbSe中获得高温下的热电特性值zT，在高温下由于导带中的载流子与价带相比较弱的散射而证明了这种效果。 本发明进一步证实了具有5.8×1018-1.4×1020cm-3载流子浓度的n型PbTe1-xIx的有利的热传递性质。

    n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS
    5.
    发明申请
    n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS 有权
    n型DOPED PbTe和PbSe合金用于热电应用

    公开(公告)号：US20140027681A1

    公开(公告)日：2014-01-30

    申请号：US13463726

    申请日：2012-05-03

    申请人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    发明人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    IPC分类号： H01L35/16

    CPC分类号： H01L35/16 ,  C01B19/007 ,  C01P2002/54 ,  C01P2006/40 ,  H01L35/34

    摘要： The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm−3.

    摘要翻译： 本发明表明，载流子的弱散射导致高迁移率，因此有助于实现低电阻率，对于热电材料具有较高的塞贝克系数。 本发明人通过在n型PbSe中获得高温下的热电特性值zT，在高温下由于导带中的载流子与价带相比较弱的散射而证明了这种效果。 本发明进一步证实了具有5.8×1018-1.4×1020cm-3载流子浓度的n型PbTe1-xIx的有利的热传递性质。

    Micro-combustion power system with dual path counter-flow system
    6.
    发明授权
    Micro-combustion power system with dual path counter-flow system 有权
    具有双路逆流系统的微燃电力系统

    公开(公告)号：US08614392B1

    公开(公告)日：2013-12-24

    申请号：US12584460

    申请日：2009-09-04

    申请人： Ying Hsu ,  Itzhak Sapir ,  Paul Ronney ,  G. Jeffrey Snyder

    发明人： Ying Hsu ,  Itzhak Sapir ,  Paul Ronney ,  G. Jeffrey Snyder

    IPC分类号： H01L35/32

    CPC分类号： H01L35/32 ,  H01L35/30

    摘要： A micro-combustion power system is disclosed. The invention is comprised of a housing that further comprises two flow path volumes, each having generally opposing flow path directions and each generally having opposing configurations.Each flow path volume comprises a pre-heating volume having at least one pre-heating heat exchange structure. Each flow path volume further comprises a combustion volume having a combustion means or structure such as a catalytic material disposed therein Further, each flow path volume comprise a post-combustion volume having at least one post-combustion heat exchange structure.One or more thermoelectric generator means is in thermal communication with at least one of the combustion volumes whereby thermal energy generated by an air/fuel catalytic reaction in the combustion volume is transferred to the thermoelectric generator to convert same to electrical energy for use by an external circuit.A novel element of the invention relates to the opposing configuration and opposing flow path directions of the respective flow path volumes. The pre-heating heat exchange structure in the first flow path volume and the opposing post-combustion heat exchange structure are comprised of a shared, thermally conductive structure and material. In this embodiment, waste heat from the exhaust gas in the post-combustion chamber is thermally transferred to the opposing pre-heating volume to heat the air/fuel mixture therein to a suitable pre-combustion temperature to take advantage of waste heat while better managing thermal/cooling issues of the device during operation.

    摘要翻译： 公开了一种微型燃烧动力系统。 本发明包括一个壳体，该壳体还包括两个流动通道体积，每个流动通道容积具有大致相对的流动路径方向，并且各自通常具有相对的构 每个流路体积包括具有至少一个预热热交换结构的预热体积。 每个流动路径体积还包括具有燃烧装置或结构（诸如设置在其中的催化材料）的燃烧体积。此外，每个流路容积包括具有至少一个后燃烧热交换结构的后燃烧体积。 一个或多个热电发生器装置与燃烧体积中的至少一个热交换，由此由燃烧体积中的空气/燃料催化反应产生的热能转移到热电发电机以将其转换为电能供外部使用 电路。 本发明的新颖元件涉及各个流路体积的相对构造和相对的流动路径方向。 第一流路体积中的预热热交换结构和相对的后燃烧热交换结构由共用的导热结构和材料构成。 在该实施例中，来自后燃烧室中来自废气的废热被热转移到相对的预热体积以将其中的空气/燃料混合物加热到合适的预燃温度以利用废热，同时更好地管理 操作期间设备的热/冷却问题。

    THERMOELECTRIC COOLING SYSTEM UTILIZING THE THOMSON EFFECT
    7.
    发明申请
    THERMOELECTRIC COOLING SYSTEM UTILIZING THE THOMSON EFFECT 审中-公开
    热电冷却系统利用THOMSON效应

    公开(公告)号：US20130074898A1

    公开(公告)日：2013-03-28

    申请号：US13625664

    申请日：2012-09-24

    申请人： G. Jeffrey Snyder

    发明人： G. Jeffrey Snyder

    IPC分类号： H01L35/32

    CPC分类号： H01L35/16 ,  H01L35/26

    摘要： Thermoelectric cooling systems are disclosed that utilize the Thomson effect. The disclosed systems can be used, for example, in cryogenic applications. In one aspect, a system is provided for thermoelectric cooling. The system comprises a pair of semiconductor elements, a cold plate and a hot plate. The pair of semiconductor elements comprises a P-type semiconductor element having a first carrier concentration and an N-type semiconductor element having a second carrier concentration. The first carrier concentration is functionally graded over the P-type semiconductor element and the second carrier concentration is functionally graded over the N-type semiconductor element. Each semiconductor element has a cold end and a hot end. The cold plate is thermally coupled to the cold ends of the P-type semiconductor elements and the N-type semiconductor element. The hot plate is thermally coupled to the hot ends of the P-type semiconductor element and the N-type semiconductor element.

    摘要翻译： 公开了利用汤姆逊效应的热电冷却系统。 所公开的系统可以用于例如低温应用中。 在一个方面，提供一种用于热电冷却的系统。 该系统包括一对半导体元件，冷板和热板。 该对半导体元件包括具有第一载流子浓度的P型半导体元件和具有第二载流子浓度的N型半导体元件。 第一载流子浓度在P型半导体元件上功能上分级，并且第二载流子浓度在功能上在N型半导体元件上分级。 每个半导体元件具有冷端和热端。 冷板热耦合到P型半导体元件和N型半导体元件的冷端。 热板热耦合到P型半导体元件和N型半导体元件的热端。

    SCANNING MEASUREMENT OF SEEBECK COEFFICIENT OF A HEATED SAMPLE
    8.
    发明申请
    SCANNING MEASUREMENT OF SEEBECK COEFFICIENT OF A HEATED SAMPLE 有权
    加热样品的SEEBECK系数的扫描测量

    公开(公告)号：US20130044788A1

    公开(公告)日：2013-02-21

    申请号：US13547006

    申请日：2012-07-11

    申请人： G. JEFFREY SNYDER

    发明人： G. JEFFREY SNYDER

    IPC分类号： G01K7/02

    CPC分类号： G01K7/02 ,  G01N25/72

    摘要： A novel scanning Seebeck coefficient measurement technique is disclosed utilizing a cold scanning thermocouple probe tip on heated bulk and thin film samples. The system measures variations in the Seebeck coefficient within the samples. The apparatus may be used for two dimensional mapping of the Seebeck coefficient on the bulk and thin film samples. This technique can be utilized for detection of defective regions, as well as phase separations in the sub-mm range of various thermoelectric materials.

    摘要翻译： 公开了一种新颖的扫描塞贝克系数测量技术，其利用加热的散装和薄膜样品上的冷扫描热电偶探针尖端。 该系统测量样品中塞贝克系数的变化。 该装置可用于块体和薄膜样品上塞贝克系数的二维映射。 该技术可用于检测缺陷区域，以及各种热电材料的毫米范围内的相分离。