公开(公告)号：US07960283B2

公开(公告)日：2011-06-14

申请号：US12825325

申请日：2010-06-28

Applicant: Jeff Jianhui Ye ,  Huang Liu ,  Alex K H See ,  Wei Lu ,  Hai Cong ,  Hui Peng Koh ,  Mei Sheng Zhou ,  Liang Choo Hsia

Inventor： Jeff Jianhui Ye ,  Huang Liu ,  Alex K H See ,  Wei Lu ,  Hai Cong ,  Hui Peng Koh ,  Mei Sheng Zhou ,  Liang Choo Hsia

IPC: H01L21/28 ,  H01L21/311

CPC classification number: H01L29/665 ,  H01L21/31116 ,  H01L29/6653 ,  H01L29/78

Abstract: A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts.

Abstract translation: 描述了在集成电路（IC）中形成硅化物触点的方法。 在水解过程期间进行间隔物拉回蚀刻以减少间隔物与间隔物底切下的源/漏硅化物接触之间的应力。 这样可以防止表面缺陷进入衬底，从而使硅化物管缺陷的发生最小化。 间隔物拉回蚀刻可以在第一退火步骤之后进行以形成硅化物接触。

公开(公告)号：US07745320B2

公开(公告)日：2010-06-29

申请号：US12124177

申请日：2008-05-21

Applicant: Jeff Jianhui Ye ,  Huang Liu ,  Alex K H See ,  Wei Lu ,  Hai Cong ,  Hui Peng Koh ,  Mei Sheng Zhou ,  Liang Choo Hsia

Inventor： Jeff Jianhui Ye ,  Huang Liu ,  Alex K H See ,  Wei Lu ,  Hai Cong ,  Hui Peng Koh ,  Mei Sheng Zhou ,  Liang Choo Hsia

IPC: H01L29/00 ,  H01L21/311

CPC classification number: H01L29/665 ,  H01L21/31116 ,  H01L29/6653 ,  H01L29/78

Abstract: A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts.

Abstract translation: 描述了在集成电路（IC）中形成硅化物触点的方法。 在水解过程期间进行间隔物拉回蚀刻以减少间隔物与间隔物底切下的源/漏硅化物接触之间的应力。 这样可以防止表面缺陷进入衬底，从而使硅化物管缺陷的发生最小化。 间隔物拉回蚀刻可以在第一退火步骤之后进行以形成硅化物接触。