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公开(公告)号：US07513214B2
公开(公告)日：2009-04-07
申请号：US10920180
申请日：2004-08-18
CPC分类号： H01J37/32623 , C23C16/505
摘要： The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.
摘要翻译： 通过将特定的气体引入到其中设置有等离子体阱的真空室中，将真空室的内部保持在特定的压力。 同时，通过作为排气装置的泵进行室的抽真空，并且通过对电极使用的高频电源将100MHz的高频功率提供给对电极。 因此，在真空室内产生均匀的等离子体，其中等离子体处理如蚀刻，沉积和表面重整可以与放置在基板电极上的基板均匀地进行。
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2.发明授权Membrane with bumps, method of manufacturing the same, and method of testing electrical circuit 失效具有凸块的膜，其制造方法以及测试电路的方法公开(公告)号：US07292056B2
公开(公告)日：2007-11-06
申请号：US11244138
申请日：2005-10-06
申请人： Izuru Matsuda
发明人： Izuru Matsuda
IPC分类号： G01R31/02
CPC分类号： G01R1/06711 , G01R1/0735 , G01R3/00 , H05K3/4007 , H05K3/423
摘要： Provided is a membrane with bumps whose variations in shape are minimized to a least extent and which are capable of supporting a micro electrical circuit. The membrane with bumps includes: a plurality of bumps, each of which is made up of a probe and an electrode, with the probe having a diameter which becomes smaller from one end toward another end of the probe, and with the electrode having a diameter which is larger than the diameter of the one end of the probe; and an insulating base where the bumps are positioned at predetermined locations so that the bumps are insulated from each other, wherein the probe is positioned, penetrating the insulating base in a thickness direction, and a metal film is placed between the electrode and the insulating base.
摘要翻译： 提供了一种具有凸块的膜，其形状的变化最小化到最小程度并且能够支撑微电路。 具有凸块的膜包括：多个凸起，每个凸起由探针和电极组成，探针的直径从探针的一端向另一端变小，电极的直径 其大于探针一端的直径; 以及绝缘基体，其中所述凸块位于预定位置，使得所述凸块彼此绝缘，其中所述探针被定位成在厚度方向上穿过所述绝缘基底，并且金属膜被放置在所述电极和所述绝缘基底之间 。
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公开(公告)号：US06830653B2
公开(公告)日：2004-12-14
申请号：US10207183
申请日：2002-07-30
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译： 一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的 通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和 电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板 的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。
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公开(公告)号：US06276892B1
公开(公告)日：2001-08-21
申请号：US09291657
申请日：1999-03-23
申请人： Hideo Haraguchi , Izuru Matsuda
发明人： Hideo Haraguchi , Izuru Matsuda
IPC分类号： B65G4907
CPC分类号： H01L21/67742 , Y10S414/13
摘要： An upper arm 4 and a lower arm 6 of a parallel link system that perform extension and retraction action in the same direction without mutual interference are arranged within a vacuum enclosure 1. Three magnetic couplings are arranged coaxially at three levels, through which extension/retraction action and swivel action of upper and lower arms are effected. Using a cam box having three output shafts driven by a single input shaft to which an arm drive motor is connected, extension/retraction drive and Z axis drive of upper and lower arms are performed, while swiveling action of upper and lower arms is driven by a swivel motor.
摘要翻译： 平行连杆系统的上臂4和下臂6在相同的方向上执行伸展和缩回动作而没有相互干涉地布置在真空外壳1内。三个磁性联轴器同轴地布置在三个等级上，延伸/缩回 上臂和下臂的动作和旋转动作得以实现。 使用具有由单个输入轴驱动的三个输出轴的凸轮盒，臂驱动马达连接到该凸轮箱，执行上下臂的伸出/缩回驱动和Z轴驱动，同时上臂和下臂的旋转动作由 旋转电机。
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公开(公告)号：US07406925B2
公开(公告)日：2008-08-05
申请号：US10983670
申请日：2004-11-09
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber. Also, a heat-conducting sheet is provided between the antenna and the antenna cover.
摘要翻译： 一种等离子体处理装置，包括真空室，用于向真空室供应气体的气体供应单元，用于排出真空室内部的排气单元，用于将真空室内部控制到特定压力的压力调节阀 ，用于将真空室内的基板放置的基板电极，与基板电极相对设置的天线，以及能够向天线供给频率为50MHz〜3GHz的高频电力的高频电源 。 等离子体处理装置还具有夹在天线和真空室的内表面之间的电介质板，用于覆盖天线和电介质板的侧表面的天线盖和天线的面向基板的表面，狭缝盖 覆盖真空室的面向基板的内表面的暴露表面，并将天线盖固定到真空室的壁表面。 此外，在天线和天线罩之间设置导热片。
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公开(公告)号：US20050082005A1
公开(公告)日：2005-04-21
申请号：US10983670
申请日：2004-11-09
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译： 一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的 通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和 电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板 的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。
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公开(公告)号：US06648976B1
公开(公告)日：2003-11-18
申请号：US09511787
申请日：2000-02-23
IPC分类号： C23C1600
CPC分类号： H01L21/6831 , G21K5/04 , H01J37/32009 , H01J2237/2001 , H01L21/67069 , H01L21/6875
摘要： A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.
摘要翻译： 等离子体处理装置包括用于从其中排出气体的真空室，用于在其中引入反应气体，并通过高频电力施加来产生等离子体。 在真空室中设置基板保持台，其中基板保持台包括具有凹部的固定面，其中待进行等离子体处理的基板的背面保持在设定面上。
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公开(公告)号：US06642533B2
公开(公告)日：2003-11-04
申请号：US09768065
申请日：2001-01-24
IPC分类号： G01N2162
CPC分类号： H01L21/67265 , H01L21/67772 , Y10S414/136 , Y10S414/137
摘要： A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.
摘要翻译： 基板检测传感器可操作地连接到门移动机构，用于相对于容纳多个基板的密封容器打开/关闭前门。 基板检测传感器进入密封容器，并与前门一体地下降地连续地检测基板，并且当检测到所有的基板时，从密封容器缩回。
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公开(公告)号：US5514243A
公开(公告)日：1996-05-07
申请号：US364106
申请日：1994-12-27
申请人： Izuru Matsuda , Masaki Suzuki
发明人： Izuru Matsuda , Masaki Suzuki
IPC分类号： H05K3/06 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/683 , H01L21/00
CPC分类号： H01J37/32009 , H01J37/32559
摘要： A dry etching apparatus includes a first electrode provided with means for controlling a temperature of a to-be-etched member, a second electrode disposed facing in parallel to the first electrode, a vacuum container housing the first and second electrodes therein, a device for feeding etching gas into the vacuum container, and a device for impressing a high frequency power between the first and second electrodes. A surface of the first electrode to be in touch with both the to-be-etched member and the etching gas and to which the high frequency power is impressed is coated with an insulating film of volume resistivity .rho. within a range: 1.times.10.sup.8 .OMEGA.cm.ltoreq..rho.
摘要翻译： 干蚀刻装置包括：第一电极，设置有用于控制被蚀刻部件的温度的装置;与第一电极平行设置的第二电极;容纳第一和第二电极的真空容器; 将蚀刻气体供给到真空容器中，以及用于在第一和第二电极之间施加高频电力的装置。 将要被蚀刻的构件和蚀刻气体两者接触并且施加高频功率的第一电极的表面涂覆体积电阻率rho的绝缘膜，范围为1×10 8Ω/ / = rho <1x109欧米伽厘米。
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公开(公告)号：US06864640B2
公开(公告)日：2005-03-08
申请号：US09918823
申请日：2001-08-01
IPC分类号： B81C1/00 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , G09G3/10
CPC分类号： H01J37/3244
摘要： A plasma processing method includes introducing a gas into a vacuum chamber through a hole of a dielectric tube attached to a metal body fixed to the vacuum chamber while exhausting from the vacuum chamber to keep the vacuum chamber within a specified pressure. High-frequency power with a frequency ranging from 100 kHz to 3 GHz is applied to a plasma source provided so as to face a substrate mounted on a substrate electrode in the vacuum chamber to generate plasma in the vacuum chamber to perform plasma processing of the substrate.
摘要翻译： 等离子体处理方法包括：通过安装在固定于真空室的金属体的电介质管的孔内将气体引入真空室，同时从真空室排出，将真空室保持在规定的压力范围内。 施加频率范围从100kHz至3GHz的高频功率施加到等离子体源，所述等离子体源设置为面对安装在真空室中的基板电极上的基板，以在真空室中产生等离子体，以执行基板的等离子体处理 。
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