公开(公告)号：US20100110931A1

公开(公告)日：2010-05-06

申请号：US12524447

申请日：2008-02-13

Applicant: Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

Inventor： Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

IPC: H04L12/28

CPC classification number: H04L61/2038 ,  H04L29/12254 ,  H04W8/26

Abstract: The present invention relates to a method of efficiently assigning addresses in a WPAN and a WPAN device. The address assignment method of the present invention is performed by a higher device. Address assignment information for determining an address to be assigned to a lower device, is managed. An address is assigned to a lower device that requests connection from the higher device based on the address assignment information. The address assignment information is updated to a address value as the address value is assigned, and the updated address assignment information is transmitted to lower devices. If an update of address assignment information is requested by the lower device that assigned an address value to a device lower thereto, the address assignment information is updated and the updated address assignment information is transmitted to lower devices.

Abstract translation: 本发明涉及一种在WPAN和WPAN设备中有效分配地址的方法。 本发明的地址分配方法由较高的装置进行。 管理用于确定要分配给下位装置的地址的地址分配信息。 根据地址分配信息，将地址分配给从较高设备请求连接的下位机。 地址分配信息被更新为地址值，并且将更新的地址分配信息发送到下位装置。 如果地址分配信息的更新被下位装置请求，下位装置将地址值分配给下位装置，则更新地址分配信息，将更新后的地址分配信息发送给下位装置。

公开(公告)号：US20070099371A1

公开(公告)日：2007-05-03

申请号：US11528147

申请日：2006-09-26

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L21/8238

CPC classification number: H01L27/1463 ,  H01L27/14623

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The method can include: forming a device isolation layer on a device isolation region of a semiconductor substrate; forming photodiodes on photodiode regions of the semiconductor substrate; forming a salicide metal layer and a barrier metal layer sequentially on the entire surface of the semiconductor layer; forming a light blocking layer between the photodiodes to block a light incident a photodiode from reaching an adjacent photodiode by selectively removing the salicide metal layer and the barrier metal layer that have not reacted during a silicide process; and forming a dielectric layer on the entire surface of the semiconductor substrate having the light blocking layer.

Abstract translation: 提供CMOS图像传感器及其制造方法。 该方法可以包括：在半导体衬底的器件隔离区上形成器件隔离层; 在半导体衬底的光电二极管区域上形成光电二极管; 在半导体层的整个表面上依次形成自对准金属层和阻挡金属层; 在所述光电二极管之间形成遮光层，以通过选择性地去除在硅化物处理期间未反应的所述自对准金属层和所述阻挡金属层来阻挡入射光电二极管到达相邻光电二极管的光; 以及在具有遮光层的半导体衬底的整个表面上形成电介质层。

公开(公告)号：US20070096168A1

公开(公告)日：2007-05-03

申请号：US11580387

申请日：2006-10-12

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L29/80 ,  H01L31/112

CPC classification number: H01L27/14643 ,  H01L27/14609

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，能够通过增加浮动扩散区域的结电容来改善图像传感器的特性。 CMOS图像传感器通常包括光电二极管和多个晶体管（例如，传输，复位，驱动和选择晶体管），第一导电类型半导体衬底，其具有包括光电二极管区域，浮动扩散区域和 电压输入/输出区域，有源区域上的每个晶体管的栅电极，对应于电压输入/输出区域的半导体衬底中的第一导电类型的第一阱区域，对应于半导体衬底中的第一导电类型第二阱区域 浮动扩散区域和在每个栅电极的相对侧的半导体衬底中的第二导电型扩散区域。

公开(公告)号：US20070085119A1

公开(公告)日：2007-04-19

申请号：US11580388

申请日：2006-10-12

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L31/113

CPC classification number: H01L27/14609 ,  H01L21/76895 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, for reducing or preventing damage to a photodiode and improving a pixel design margin to achieve scale down of a pixel. The CMOS image sensor includes an isolation layer in a semiconductor substrate, a gate electrode crossing a part of the isolation layer and the active area, a photodiode area in the active area, an insulating sidewall spacer on sides of the gate electrode, a metal silicide layer on the gate electrode and at least part of a surface of the photodiode area adjacent to the gate electrode, a metal layer electrically connecting the gate electrode to the photodiode area, and a dielectric layer on the entire surface of semiconductor substrate.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，用于减少或防止对光电二极管的损坏并提高像素设计余量以实现像素的缩小。 CMOS图像传感器包括半导体衬底中的隔离层，与绝缘层和有源区域交叉的栅电极，有源区中的光电二极管区域，栅电极侧的绝缘侧壁隔离物，金属硅化物 以及与栅电极相邻的光电二极管区域的表面的至少一部分，将栅极电极连接到光电二极管区域的金属层和在半导体基板的整个表面上的电介质层。

公开(公告)号：US20050040160A1

公开(公告)日：2005-02-24

申请号：US10768084

申请日：2004-02-02

Applicant: In Jeon

Inventor： In Jeon

IPC: F24C15/18 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/6479

Abstract: A microwave oven is capable of cooking food using steam produced in a cooking cavity. The microwave oven includes a cabinet in which a cooking cavity is defined. A microwave heating unit radiates microwaves into the cooking cavity. A steaming unit is provided on a predetermined position of the cabinet to define a cooking space, which is partitioned from the cooking cavity. A steam guide passage guides steam produced in the cooking cavity, into the steaming unit.

Abstract translation: 微波炉能够使用在烹饪腔中产生的蒸汽烹饪食物。 微波炉包括一个柜子，在其中定义了烹饪腔。 微波加热单元将微波辐射到烹饪腔中。 蒸汽单元设置在机柜的预定位置，以限定烹饪空间，烹饪空间与烹饪腔隔开。 蒸汽引导通道引导烹饪腔中产生的蒸汽进入蒸汽单元。

公开(公告)号：US08861483B2

公开(公告)日：2014-10-14

申请号：US12524483

申请日：2008-02-13

Applicant: Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

Inventor： Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

IPC: H04W40/24 ,  H04W74/04 ,  H04W48/12 ,  H04W72/12 ,  H04W84/18

CPC classification number: H04W74/04 ,  H04W40/244 ,  H04W48/12 ,  H04W72/12 ,  H04W84/18

Abstract: The present invention relates to a method and to a wireless personal area network (WPAN) device in which the device sets the beacon slot in the WPAN device and receives beacon slot information from neighbor devices, while setting the beacon table of the devices, to avoid the transmission time of the neighbor devices and the transmission time of the devices neighboring the neighbor devices in a WPAN. In the method, beacon message, including information about neighbors' transmission time and information about neighbors' neighbors' transmission time, is received from neighbor devices. The beacon message is combined, and the neighbors' transmission time information and the neighbors' neighbors' transmission time information are input into a beacon table. The neighbors' transmission time and the neighbors' neighbors' transmission time are input into a field for BTTSs to be avoided in the beacon table. The first beacon slot is set, as my beacon transmission slot, among beacon slots except for the transmission time input into the field for BTTSs to be avoided. Information about the set beacon transmission slot is input into a field for my BTTS in the beacon table.

Abstract translation: 本发明涉及一种方法和无线个域网（WPAN）装置，其中设备在WPAN设备中设置信标时隙，并在设置设备的信标表的同时从邻居设备接收信标时隙信息，以避免 相邻设备的传输时间和与WPAN中相邻设备相邻的设备的传输时间。 在该方法中，从相邻设备接收到包括关于邻居的传输时间的信息和关于邻居的邻居的传输时间的信息的信标消息。 组合信标消息，并将邻居的发送时间信息和邻居的邻居发送时间信息输入信标表。 将邻居的发送时间和邻居的邻居的发送时间输入到字段中，以便在信标表中避免BTTS。 第一个信标时隙作为我的信标传输时隙设置在信号时隙之外，除了输入到现场的传输时间之外，可以避免BTTSs。 关于设置的信标传输时隙的信息被输入到信标表中的BTTS的字段中。

公开(公告)号：US20130303668A1

公开(公告)日：2013-11-14

申请号：US13988544

申请日：2011-11-10

Applicant: Il Joong Yoon ,  In Jeon ,  Og Ryang Wi ,  Cheol-Jong Park ,  Yeon-Jo Hong

Inventor： Il Joong Yoon ,  In Jeon ,  Og Ryang Wi ,  Cheol-Jong Park ,  Yeon-Jo Hong

IPC: C08K5/3475 ,  C08K5/07

CPC classification number: C08K5/3475 ,  C08G18/10 ,  C08G18/3243 ,  C08G18/4854 ,  C08G18/7621 ,  C08K5/07 ,  C08G18/3876

Abstract: The ozone-resistant polyurethane composition according to the present invention, which is for the linings of valves, pipes or ozone contactors used in advanced water-treatment plants, comprises: 100 parts by weight of a polyurethane prepolymer consisting of toluene diisocyanate and poly(tetramethylene ether)glycol; from 8 to 14 parts by weight of 6-methyl-2,4-bis(methylthio)phenylene-1,3-diamine; and from 0.8 to 2.8 parts by weight of benzophenone or benzotriazole. Also, the production method for the ozone-resistant polyurethane composition according to the present invention, which is for the linings of valves, pipes or ozone contactors used in advanced water treatment plants, comprises the steps of: mixing from 0.8 to 2.8 parts by weight of benzophenone or benzotriazole in 100 parts by weight of a polyurethane prepolymer consisting of toluene diisocyanate and poly(tetramethylene ether)glycol, and stirring for between 25 and 35 minutes at between 90 and 100° C.; and mixing from 8 to 14 parts by weight of 6-methyl-2,4-bis(methylthio)phenylene-1,3-diamine into the stirred liquid.

Abstract translation: 根据本发明的用于先进水处理设备中使用的阀门，管道或臭氧接触器的衬里的耐臭氧聚氨酯组合物包括：100重量份的由甲苯二异氰酸酯和聚（四亚甲基 乙醚） 8〜14重量份的6-甲基-2,4-双（甲硫基）亚苯基-1,3-二胺; 和0.8至2.8重量份的二苯甲酮或苯并三唑。 此外，本发明的耐臭氧性聚氨酯组合物的制造方法，其用于先进的水处理装置中使用的阀，管或臭氧接触器的衬垫，包括以下步骤：将0.8至2.8重量份 的二苯甲酮或苯并三唑在100重量份由甲苯二异氰酸酯和聚（四亚甲基醚）二醇组成的聚氨酯预聚物中，并在90至100℃之间搅拌25至35分钟; 并将8至14重量份的6-甲基-2,4-双（甲硫基）亚苯基-1,3-二胺混入搅拌液中。

公开(公告)号：US20070069322A1

公开(公告)日：2007-03-29

申请号：US11528178

申请日：2006-09-26

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L31/06

CPC classification number: H01L27/14643 ,  H01L27/14601 ,  H01L27/14689

Abstract: Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.

Abstract translation: 提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括光电二极管，传输晶体管，复位晶体管，驱动晶体管和选择晶体管。 器件隔离层形成在第一导电类型的衬底上。 传输晶体管的栅电极，复位晶体管，驱动晶体管和选择晶体管形成在衬底的有源区上，栅极绝缘层位于它们之间。 第一扩散区域由有源区域的第一区域中的第二导电类型形成，其中第一区域不包括传输晶体管和复位晶体管与光电二极管区域之间的浮动扩散区域。 第二扩散区域以比第二导电型第一扩散区域低的浓度在浮动扩散区域中由第二导电类型形成。

公开(公告)号：US20060001121A1

公开(公告)日：2006-01-05

申请号：US11175524

申请日：2005-07-05

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L31/06 ,  H01L21/331

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14689

Abstract: A phototransistor of a CMOS image sensor suitable for decreasing the size of layout, and a method for fabricating the phototransistor are disclosed, in which the phototransistor includes a first conductive type semiconductor substrate; an STI layer on the first conductive type semiconductor substrate, to define an active area and a device isolation area in the first conductive type semiconductor substrate; a second conductive type well in the first conductive type semiconductor substrate; a gate line on the first conductive type semiconductor substrate; an ohmic contact layer in the second conductive type well, wherein the ohmic contact layer is overlapped with the gate line in state of interposing the STI layer therebetween; and a contact to connect the gate line with the ohmic contact layer through the STI layer.

Abstract translation: 公开了适用于减小布局尺寸的CMOS图像传感器的光电晶体管，以及制造光电晶体管的方法，其中光电晶体管包括第一导电型半导体衬底; 在第一导电类型半导体衬底上的STI层，以限定第一导电类型半导体衬底中的有源区和器件隔离区; 在第一导电类型半导体衬底中的第二导电类型阱; 在第一导电型半导体衬底上的栅极线; 在第二导电类型阱中的欧姆接触层，其中欧姆接触层在其间插入STI层的状态下与栅极线重叠; 以及通过STI层将栅极线与欧姆接触层连接的触点。

公开(公告)号：US20050139832A1

公开(公告)日：2005-06-30

申请号：US10970347

申请日：2004-10-21

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L27/108 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/0232

Abstract: CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 公开的CMOS图像传感器包括：半导体衬底; 光电二极管; 位于光电二极管上方的微透镜; 以及位于微透镜上方的滤色器层。