公开(公告)号：US20110120736A1

公开(公告)日：2011-05-26

申请号：US12752655

申请日：2010-04-01

Applicant: Hoon Hui Lee ,  Ki Ho Hwang ,  Hyung Ki Kim ,  Sang Hyun Kim

Inventor： Hoon Hui Lee ,  Ki Ho Hwang ,  Hyung Ki Kim ,  Sang Hyun Kim

IPC: A62C3/06

CPC classification number: A62C3/06

Abstract: The present invention provides a fire safety apparatus for a high-pressure gas storage system which can suitably ensure the fire safety of the high-pressure tank. Preferably, a flame transfer member having superior flammability is provided outside the high-pressure tank having a tank valve on a first end thereof. The flame transfer member extends a second end of the high-pressure tank to the tank valve, so that when a fire occurs, the flame transfer member rapidly burns creating flames and transfers heat from the origin of the fire to a PRD (pressure relief device) provided on the tank valve.

Abstract translation: 本发明提供一种能够适当地确保高压罐的消防安全的高压气体存储系统的消防安全装置。 优选地，具有优异的可燃性的火焰传递构件设置在其第一端上具有罐阀的高压罐的外部。 火焰传递构件将高压罐的第二端延伸到罐阀，使得当发生火灾时，火焰传递构件快速燃烧产生火焰并将热量从火源传递到PRD（压力释放装置 ）。

公开(公告)号：US20100167155A1

公开(公告)日：2010-07-01

申请号：US11999370

申请日：2007-12-04

Applicant: Sang Hyun Kim ,  Hoon Hee Lee ,  Hyung Ki Kim

Inventor： Sang Hyun Kim ,  Hoon Hee Lee ,  Hyung Ki Kim

IPC: H01M8/24

CPC classification number: H01M8/04201 ,  F17C5/06 ,  F17C11/005 ,  F17C2221/012 ,  H01M8/04089 ,  H01M8/04216 ,  Y02E60/321 ,  Y10T137/4673 ,  Y10T137/469

Abstract: The present invention provides a hydrogen supply system for a fuel cell which can compensate for a change in temperature, caused by heat generated when a high pressure tank is charged and discharged with hydrogen, using a metal hydride (MH) tank providing high hydrogen storage density, mounted in the high pressure tank such that hydrogen is to be discharged from the MH tank when hydrogen is charged to the high pressure tank, and hydrogen is to be charged to the MH tank when hydrogen is discharged from the high pressure tank.For this, the present invention provides a hydrogen supply system for a fuel cell, including: a high pressure tank which is capable of storing hydrogen received from a hydrogen refueling station and includes a metal hydride (MH) tank capable of storing hydrogen, mounted therein; first and second solenoid valves provided at both ends of the high pressure tank; a buffer tank connected in parallel to the high pressure tank; and a fuel cell stack connected to the buffer tank so that hydrogen from the high pressure tank or the MH tank is supplied to the stack through the buffer tank, wherein the hydrogen is charged from the hydrogen refueling station to the high pressure tank and discharged from the high pressure tank through the first solenoid valve, the hydrogen is charged and discharged to and from the MH tank through the second solenoid valve, the hydrogen is discharged from the MH tank as the first and second solenoid valves are simultaneously opened when the hydrogen is charged to the high pressure tank, and the hydrogen discharged from the MH tank is stored in the buffer tank and then supplied to the fuel cell stack.

Abstract translation: 本发明提供了一种用于燃料电池的氢气供应系统，其能够补偿当高压罐用氢气充放电时产生的热引起的温度变化，使用提供高储氢密度的金属氢化物（MH） 安装在高压罐中，以便当氢气被充入高压罐时氢从MH储存器中排出，当氢气从高压罐排出时，氢气将被充入MH储罐。 为此，本发明提供了一种用于燃料电池的氢气供应系统，包括：高压罐，其能够储存从加氢站接收的氢气，并且包括能够储存氢的金属氢化物（MH）罐，安装在其中 ; 设置在高压罐两端的第一和第二电磁阀; 与高压罐并联连接的缓冲罐; 以及连接到缓冲罐的燃料电池堆，使得来自高压罐或MH箱的氢气通过缓冲罐被供应到堆叠，其中氢气从加氢站被加载到高压罐并从 高压罐通过第一电磁阀，氢气通过第二电磁阀向MH箱充放电，当氢气为氢时，第一和第二电磁阀同时打开时氢从MH箱排出 充入高压罐，从MH箱排出的氢气储存在缓冲罐中，然后供给到燃料电池堆。

公开(公告)号：US07101783B2

公开(公告)日：2006-09-05

申请号：US10879299

申请日：2004-06-30

Applicant: Hyung Ki Kim

Inventor： Hyung Ki Kim

IPC: H01L21/4763

CPC classification number: H01L21/32051 ,  H01L27/10888 ,  H01L27/10894

Abstract: Disclosed is a method for forming a bit-line of a semiconductor device. In a line patterning process for forming a bit-line in a DRAM (Dynamic Random Access Memory) of a semiconductor device, a barrier metal layer and a tungsten layer are sequentially formed on an interlayer insulating film comprising a contact hole to fill the contact hole by a CVD (Chemical Vapor Deposition) method. Then, the barrier metal layer and the tungsten layer are removed until the interlayer insulating film is exposed, and a tungsten layer having small thickness is re-formed on the exposed interlayer insulating film by a PVD (physical Vapor Deposition) method. As a result, the bit-line area is reduced as much as the barrier metal layer removed from the upper portion of interlayer insulating film, thereby having low bit-line capacitance.

Abstract translation: 公开了一种形成半导体器件的位线的方法。 在用于在半导体器件的DRAM（动态随机存取存储器）中形成位线的线图案化工艺中，阻挡金属层和钨层依次形成在包括接触孔的层间绝缘膜上以填充接触孔 通过CVD（化学气相沉积）法。 然后，去除阻挡金属层和钨层，直到层间绝缘膜露出，并且通过PVD（物理气相沉积）方法在暴露的层间绝缘膜上重新形成厚度小的钨层。 结果，位线区域与从层间绝缘膜的上部去除的阻挡金属层一样减少，从而具有低的位线电容。

公开(公告)号：US08886405B2

公开(公告)日：2014-11-11

申请号：US13189955

申请日：2011-07-25

Applicant: Hyung Ki Kim ,  Sang Hyun Kim ,  Jihyun Shim

Inventor： Hyung Ki Kim ,  Sang Hyun Kim ,  Jihyun Shim

IPC: B60G17/0185 ,  B60W20/00 ,  B60K37/06 ,  H01M16/00 ,  B60L11/18 ,  H01M8/04

CPC classification number: H01M16/006 ,  B60L11/1892 ,  H01M8/04201 ,  H01M8/04208 ,  H01M8/04373 ,  H01M8/04425 ,  H01M2250/20 ,  Y02E60/50 ,  Y02T90/32 ,  Y02T90/34

Abstract: A power supply apparatus for a fuel cell vehicle, and provides a power supply apparatus of a fuel cell vehicle. More specifically, an InfraRed (IR) data transmitter transmits and receives data to/from a hydrogen charger and a power supply apparatus, that is connected to the IR data transmitter, selectively supplies power thereto according to the opening/closing of a fuel door. In particular, a sensing apparatus is connected to the power supply apparatus and senses opening/closing of the fuel door and a normal power source that is connected to the sensing apparatus for opening/closing the fuel door selectively supplies power to the sensing apparatus when the normal power source is off.

Abstract translation: 一种燃料电池车辆用电源装置，提供燃料电池车辆的供电装置。 更具体地说，红外线（IR）数据发射机与氢充电器和连接到IR数据发射器的电源装置发送和接收数据，根据燃料门的打开/关闭有选择地向其供电。 特别地，感测装置连接到电源装置并且感测燃料门的打开/关闭，并且连接到用于打开/关闭燃料门的感测装置的正常电源选择性地向传感装置供电，当该 正常电源关闭。

公开(公告)号：US07071059B1

公开(公告)日：2006-07-04

申请号：US11148557

申请日：2005-06-09

Applicant: Hyung Ki Kim

Inventor： Hyung Ki Kim

IPC: H01L21/336

CPC classification number: H01L29/7834 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823437 ,  H01L29/66636

Abstract: A method for forming a recess gate of a semiconductor device is disclosed. The method for forming a recess gate of a semiconductor device comprises forming a polysilicon layer pattern covering a contact region on a semiconductor substrate, etching a predetermined thickness of the semiconductor substrate in the active region using the polysilicon layer pattern as an etching mask to form a recess gate region, and forming and patterning the gate polysilicon layer, the gate conductive layer and the gate hard mask layer to form a recess gate.

Abstract translation: 公开了一种用于形成半导体器件的凹槽的方法。 形成半导体器件的凹槽的方法包括形成覆盖半导体衬底上的接触区域的多晶硅层图案，使用多晶硅层图案作为蚀刻掩模蚀刻有源区中的半导体衬底的预定厚度，以形成 并且形成和构图栅极多晶硅层，栅极导电层和栅极硬掩模层以形成凹陷栅极。

公开(公告)号：USD499220S1

公开(公告)日：2004-11-30

申请号：US29190082

申请日：2003-09-16

Applicant: Hyung Ki Kim

Designer： Hyung Ki Kim

公开(公告)号：US06348713B1

公开(公告)日：2002-02-19

申请号：US09577717

申请日：2000-05-23

Applicant: Hyung Ki Kim ,  Jong Wook Lee

Inventor： Hyung Ki Kim ,  Jong Wook Lee

IPC: H01L2701

CPC classification number: H01L27/1203 ,  H01L21/84

Abstract: Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.

公开(公告)号：USD607160S1

公开(公告)日：2009-12-29

申请号：US29311416

申请日：2009-03-11

Applicant: Sang Min Yu ,  Hyung Ki Kim

Designer： Sang Min Yu ,  Hyung Ki Kim

公开(公告)号：US20090272590A1

公开(公告)日：2009-11-05

申请号：US12268117

申请日：2008-11-10

Applicant: Hyung Ki Kim ,  Sang Hyun Kim ,  Hoon Hee Lee ,  Hee Yeon Ryu

Inventor： Hyung Ki Kim ,  Sang Hyun Kim ,  Hoon Hee Lee ,  Hee Yeon Ryu

IPC: B60K15/063

CPC classification number: B60K15/03006 ,  Y02E60/324

Abstract: The present invention provides a hydrogen storage system for a vehicle which is readily attachable to and detachable from the vehicle. The hydrogen storage system includes a plurality of hydrogen tanks filled with hydrogen at the outside and is mounted on the top of a rear underfloor of the vehicle in the form of a cartridge.For this purpose, the present invention provides a hydrogen storage system for a vehicle, including a hydrogen storage housing, accommodating a hydrogen storage material filled with hydrogen at the outside and easily attached to and detached from the vehicle using a quick connector.

Abstract translation: 本发明提供一种车辆的氢气储存系统，其易于附接到车辆上并可从车辆拆卸。 氢存储系统包括在外部填充有氢的多个氢气罐，并且以盒的形式安装在车辆的后地板的顶部上。 为此，本发明提供了一种用于车辆的氢存储系统，其包括储氢壳体，其容纳使用快速连接器容易地附接到车辆并从车辆拆卸的在外部填充氢的储氢材料。

公开(公告)号：US06479328B1

公开(公告)日：2002-11-12

申请号：US09705873

申请日：2000-11-06

Applicant: Hyung Ki Kim

Inventor： Hyung Ki Kim

IPC: H01L2100

CPC classification number: H01L21/76264 ,  H01L21/76281 ,  H01L21/76283

Abstract: The present invention discloses a method for fabricating a SOI wafer. The method for fabricating the SOI wafer of the present invention, comprising the steps of: preparing a semiconductor substrate and a base substrate; forming a pad oxide layer, a nitride layer and a mask oxide layer in sequence on one surface of the semiconductor substrate; etching the pad oxide layer, the nitride layer, and the mask oxide layer to expose an isolation region of the semiconductor substrate; forming a trench by etching the exposed semiconductor substrate region; removing the mask oxide layer; forming a field oxide layer having bird's-beak at the edge thereof by oxidizing the low surface of the trench; removing the field oxide layer; forming an isolation layer of trench type to fill the oxide layer into the trench; removing the nitride layer and the pad oxide layer; depositing a first insulating layer on the isolation layer and the semiconductor substrate; depositing a second insulating layer on the base substrate; bonding the semiconductor substrate and the base substrate to form a contact of the first insulating layer with the second insulating layer; polishing the surface of the semiconductor substrate using the isolation layer as a polishing stopper; and further polishing the surface of the semiconductor substrate to expose the bird's beak and to form a semiconductor layer of a desired thickness.

Abstract translation: 本发明公开了一种SOI晶片的制造方法。 本发明的SOI晶片的制造方法，其特征在于，包括：准备半导体基板和基板; 在半导体衬底的一个表面上依次形成衬垫氧化物层，氮化物层和掩模氧化物层; 蚀刻所述衬垫氧化物层，所述氮化物层和所述掩模氧化物层以暴露所述半导体衬底的隔离区域; 通过蚀刻暴露的半导体衬底区域形成沟槽; 去除掩模氧化物层; 通过氧化沟槽的低表面在其边缘处形成具有鸟嘴的场氧化物层; 去除场氧化物层; 形成沟槽类型的隔离层以将氧化物层填充到沟槽中; 去除氮化物层和衬垫氧化物层; 在所述隔离层和所述半导体衬底上沉积第一绝缘层; 在所述基底基板上沉积第二绝缘层; 键合半导体衬底和基底衬底以形成第一绝缘层与第二绝缘层的接触; 使用隔离层将半导体衬底的表面抛光为抛光停止器; 并进一步抛光半导体衬底的表面以暴露鸟的喙并形成所需厚度的半导体层。