公开(公告)号：US08819610B2

公开(公告)日：2014-08-26

申请号：US13778912

申请日：2013-02-27

申请人： Hsiang-Jen Tseng ,  Ting-Wei Chiang ,  Wei-Yu Chen ,  Ruei-Wun Sun ,  Hung-Jung Tseng ,  Shun Li Chen ,  Li-Chun Tien

发明人： Hsiang-Jen Tseng ,  Ting-Wei Chiang ,  Wei-Yu Chen ,  Ruei-Wun Sun ,  Hung-Jung Tseng ,  Shun Li Chen ,  Li-Chun Tien

IPC分类号： G06F17/50

CPC分类号： G06F17/5077 ,  G06F17/5068 ,  G06F17/5072 ,  H01L23/4824 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.

摘要翻译： 集成电路布局包括P型有源区，N型有源区，第一金属连接，第二金属连接和多个树干。 多个树干基本并排地形成并且彼此平行。 第一金属连接基本上设置在P型有源区上，并且与P型有源区中的PMOS晶体管的漏极区域电连接。 第二金属连接基本上设置在N型有源区上，并且与N型有源区中的NMOS晶体管的漏区电连接。 多个树干电连接并且基本上垂直于第一金属连接和第二金属连接。 多个树干的第一树干具有比多个树干中的其他树干的宽度宽的宽度，并且布置成位于两组树干之间。

公开(公告)号：US09323881B2

公开(公告)日：2016-04-26

申请号：US14341130

申请日：2014-07-25

申请人： Hsiang-Jen Tseng ,  Ting-Wei Chiang ,  Wei-Yu Chen ,  Ruei-Wun Sun ,  Hung-Jung Tseng ,  Shun Li Chen ,  Li-Chun Tien

发明人： Hsiang-Jen Tseng ,  Ting-Wei Chiang ,  Wei-Yu Chen ,  Ruei-Wun Sun ,  Hung-Jung Tseng ,  Shun Li Chen ,  Li-Chun Tien

IPC分类号： G06F17/50 ,  H01L23/482

CPC分类号： G06F17/5077 ,  G06F17/5068 ,  G06F17/5072 ,  H01L23/4824 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.

摘要翻译： 集成电路布局包括P型有源区和N型有源区，以及多个树干。 集成电路布局还包括连接到P型有源区的第一金属连接; 以及连接到N型有源区的第二金属连接。 多个树干的每个中继线与第一金属连接和第二金属连接电连接。 多个树干的每个树干基本上垂直于第一金属连接和第二金属连接。 多个树干的第一树干具有比多个树干中的其他树干的宽度宽的宽度。

公开(公告)号：US20140332971A1

公开(公告)日：2014-11-13

申请号：US14341130

申请日：2014-07-25

申请人： Hsiang-Jen TSENG ,  Ting-Wei CHIANG ,  Wei-Yu CHEN ,  Ruei-Wun SUN ,  Hung-Jung TSENG ,  Shun Li CHEN ,  Li-Chun TIEN

发明人： Hsiang-Jen TSENG ,  Ting-Wei CHIANG ,  Wei-Yu CHEN ,  Ruei-Wun SUN ,  Hung-Jung TSENG ,  Shun Li CHEN ,  Li-Chun TIEN

IPC分类号： G06F17/50 ,  H01L23/482

CPC分类号： G06F17/5077 ,  G06F17/5068 ,  G06F17/5072 ,  H01L23/4824 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.

摘要翻译： 集成电路布局包括P型有源区和N型有源区，以及多个树干。 集成电路布局还包括连接到P型有源区的第一金属连接; 以及连接到N型有源区的第二金属连接。 多个树干的每个中继线与第一金属连接和第二金属连接电连接。 多个树干的每个树干基本上垂直于第一金属连接和第二金属连接。 多个树干的第一树干具有比多个树干中的其他树干的宽度宽的宽度。

公开(公告)号：US20140195997A1

公开(公告)日：2014-07-10

申请号：US13778912

申请日：2013-02-27

申请人： Hsiang-Jen TSENG ,  Ting-Wei CHIANG ,  Wei-Yu CHEN ,  Ruei-Wun SUN ,  Hung-Jung TSENG ,  Shun Li CHEN ,  Li-Chun TIEN

发明人： Hsiang-Jen TSENG ,  Ting-Wei CHIANG ,  Wei-Yu CHEN ,  Ruei-Wun SUN ,  Hung-Jung TSENG ,  Shun Li CHEN ,  Li-Chun TIEN

IPC分类号： G06F17/50

CPC分类号： G06F17/5077 ,  G06F17/5068 ,  G06F17/5072 ,  H01L23/4824 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.

摘要翻译： 集成电路布局包括P型有源区，N型有源区，第一金属连接，第二金属连接和多个树干。 多个树干基本并排地形成并且彼此平行。 第一金属连接基本上设置在P型有源区上，并且与P型有源区中的PMOS晶体管的漏极区域电连接。 第二金属连接基本上设置在N型有源区上，并且与N型有源区中的NMOS晶体管的漏区电连接。 多个树干电连接并且基本上垂直于第一金属连接和第二金属连接。 多个树干的第一树干具有比多个树干中的其他树干的宽度宽的宽度，并且布置成位于两组树干之间。