公开(公告)号：US20070278621A1

公开(公告)日：2007-12-06

申请号：US10580669

申请日：2004-12-03

申请人： Holger Rucker ,  Bernd Heinemann

发明人： Holger Rucker ,  Bernd Heinemann

IPC分类号： H01L29/70 ,  H01L21/331

CPC分类号： H01L29/66287 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the emitter which is surrounded by a spacer of insulating material. The epitaxial base layer is raised in a heightwise direction perpendicularly to the substrate surface. An emitter of a T-shaped cross-sectional profile is separated laterally from the outer base portion by a spacer of insulating material. Its vertical bar of the T-shape adjoins with its lower end the inner base portion. The lateral extent of the spacer increases from its interface with respect to the base layer with increasing height above the base layer, wherein a first interface formed by the emitter and the spacer meets a second interface formed by the emitter and the inner base portion at a first angle which is either a right angle or an obtuse angle, and a third interface formed by the spacer and the outer base portion meets the second interface at a second obtuse angle which is larger than the first angle.

摘要翻译： 双极晶体管具有基底，其具有外延基底层和凸起的基底连接区域，该基底连接区域在与衬底表面平行的方向上包围由绝缘材料的隔离物围绕的发射器。 外延基层在与基板表面垂直的高度方向上升高。 通过绝缘材料的间隔件将T形横截面轮廓的发射器从外部基部侧向分开。 其T形的垂直杆的下端与内部基部相邻。 间隔物的横向范围从其相对于基底层的界面增加，其高度高于基底层，其中由发射体和间隔物形成的第一界面与由发射体和内部基底部分形成的第二界面在 第一角度是直角或钝角，并且由间隔件和外基部形成的第三界面以大于第一角度的第二钝角与第二界面相交。

公开(公告)号：US20050023642A1

公开(公告)日：2005-02-03

申请号：US10496531

申请日：2002-12-02

申请人： Bernd Heinemann ,  Dieter Knoll ,  Karl-Ernst Ehwald ,  Holger Rucker

发明人： Bernd Heinemann ,  Dieter Knoll ,  Karl-Ernst Ehwald ,  Holger Rucker

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L29/737 ,  H01L21/8222

CPC分类号： H01L29/66287 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/7325

摘要： The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.

摘要翻译： 根据本发明的半导体器件包括衬底，限定半导体衬底的有源区域的场绝缘区域，集电极，与集电极相关联的至少一个集电极接触区域以及具有相关联的基极连接区域的基极。 集电极和集电极接触区形成在相同的有源区中。 此外，基极连接区部分地延伸在有源区上方并且通过绝缘体层与有源区的表面分离。