公开(公告)号：US08927348B2

公开(公告)日：2015-01-06

申请号：US12992232

申请日：2009-05-12

申请人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

发明人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/16 ,  H01L33/20

CPC分类号： H01L33/0095 ,  H01L24/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.

摘要翻译： 提供一种III族氮化物半导体发光器件的制造方法，其中可以获得内部量子效率和光提取效率优异的发光器件，III族氮化物半导体发光器件和 灯。 包括以半导体层（30）形成到衬底（2）的主表面（20）的外延步骤，在半导体层（30）上形成保护膜的掩模步骤，半导体层去除步骤 通过激光照射去除保护膜和半导体层（30）以露出基板（2），减小基板（2）的厚度的研磨步骤，抛光基板（2）的抛光步骤，激光 在衬底（2）的内部提供加工标记的处理步骤，在形成具有粗糙表面的衬底（2）的分割表面的同时产生多个发光器件（1）的划分步骤。

公开(公告)号：US08916904B2

公开(公告)日：2014-12-23

申请号：US13752781

申请日：2013-01-29

申请人： Hironao Shinohara ,  Kensuke Hirano

发明人： Hironao Shinohara ,  Kensuke Hirano

IPC分类号： H01L33/00 ,  H01L31/02 ,  H01L31/0304

CPC分类号： H01L31/02 ,  B23K26/0622 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/03044 ,  H01L33/0095 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2924/00014

摘要： In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.

摘要翻译： 在具有蓝宝石衬底的半导体发光元件和层叠在蓝宝石衬底上的下半导体层和上半导体层的蓝宝石衬底包括衬底顶表面，衬底底表面，第一衬底侧表面和第二衬底侧表面 ; 多个第一切口和多个第二切口设置在第一基板侧表面和基板顶表面之间以及第二基板侧表面和基板顶表面之间的边界部分处; 下半导体层包括下半导体底表面，下半导体顶表面，第一下半导体侧表面和第二下半导体侧表面; 多个第一突出部分和多个第一按压部分设置在第一下半导体侧表面上; 并且多个第二突出部分和第二平坦部分设置在第二下部半导体侧表面上。

公开(公告)号：US08502254B2

公开(公告)日：2013-08-06

申请号：US13255037

申请日：2010-03-05

申请人： Daisuke Hiraiwa ,  Hironao Shinohara

发明人： Daisuke Hiraiwa ,  Hironao Shinohara

IPC分类号： H01L33/22

CPC分类号： H01L33/145 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

摘要翻译： 公开了一种III族氮化物半导体发光器件，其抑制透光电极和直接在电极下方的半导体层的电流集中，以提高发光效率，抑制电极中的光吸收或由于多次反射引起的光损失 提高光提取效率，具有优异的外量子效率和电特性。 其中n型半导体层（4），发光层（5）和p型半导体层（6）依次层叠的半导体层（20）形成在单晶底层（ 3），其形成在基板（11）上。 在p型半导体层（6）上形成透光电极（7）。 绝缘层（15）形成在p型半导体层（6）的至少一部分上，透光电极（7）形成为覆盖绝缘层（15）。 在透光电极（7）的表面（7a）上，在与p型半导体层（6）上设置的绝缘层（15）对应的位置A设置正极焊盘（8）。 n型半导体层（4）的薄层电阻低于透光性电极（7）的薄层电阻。

公开(公告)号：US08421107B2

公开(公告)日：2013-04-16

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US08258541B2

公开(公告)日：2012-09-04

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US07982232B2

公开(公告)日：2011-07-19

申请号：US12199767

申请日：2008-08-27

申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

摘要翻译： 提供了具有优异的光提取效率和低波长不均匀性的半导体发光器件，其制造方法和灯。 半导体发光器件包括依次层叠的n型半导体层12，发光层13，p型半导体层14和氧化钛系导电膜层15， 凸面15形成在氧化钛系导电膜层的表面的至少一部分上。

公开(公告)号：US07968361B2

公开(公告)日：2011-06-28

申请号：US12295206

申请日：2007-03-30

申请人： Hiroshi Osawa ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Hironao Shinohara

IPC分类号： H01L21/66

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

摘要翻译： 提供一种发光特性和发光效率优异的氮化镓系化合物半导体发光元件的制造方法。 在这种制造氮化镓基化合物半导体发光器件的方法中，其是至少具有缓冲层的GaN基半导体发光器件的制造方法，n型半导体层，发光层和 p型半导体层在其上形成由凸形和凹形形成的不均匀图案的半透明基板上，缓冲层通过在具有枢转磁控管磁路和缓冲层的装置中进行的溅射法形成 含有AlN，ZnO，Mg或Hf。

公开(公告)号：US20110095327A1

公开(公告)日：2011-04-28

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US20110018022A1

公开(公告)日：2011-01-27

申请号：US12922422

申请日：2009-03-13

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.

摘要翻译： 本发明的半导体发光器件包括：衬底（101）; 包括形成在所述基板（101）上的发光层（105）的层叠半导体层（20）。 形成在层叠半导体层（20）的顶面上的透光性电极（109）。 以及形成在所述透光性电极（109）上的接合层（110）和接合焊盘电极（107），其中所述接合焊盘电极（107）具有包括金属反射层（107a）和接合层（107c）的层叠结构 ），并且金属反射层（107a）由选自Ag，Al，Ru，Rh，Pd，Os，Ir中的至少一种金属制成 和Pt，或含有金属的合金。

公开(公告)号：US07847314B2

公开(公告)日：2010-12-07

申请号：US12065970

申请日：2006-09-05

申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。