摘要:
A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.
摘要:
A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit.
摘要:
A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields.
摘要:
A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W1 and an element length L1 perpendicular to the element width W1 and producing a magnetoresistive effect in which electrical resistance changes in response to an external magnetic field are arranged in an element-length direction with a space therebetween. An intermediate permanent magnet layer is disposed in the space, and the element units are connected to each other with the intermediate permanent magnet layer therebetween to form a connected-element body. A plurality of the connected-element bodies are arranged so as to be adjacent to one another in an element-width direction with a space therebetween, the ends of the connected-element bodies are connected to each other with an outer permanent magnet layer therebetween to form a magnetoresistive effect element having a meandering shape.
摘要:
In a magnetic detecting device, conductive patterns are formed on a substrate in a surrounding region outside chips, except for a region between the chips. Inner connection pads formed on each of the chips are wire-bonded to their corresponding conductive patterns, so that the chips are electrically connected to each other.
摘要:
In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers.
摘要:
In a magnetic detection device for obtaining an output from between a variable resistance element using the magnetoresistance effect and a reference resistance element, a balance between resistance values in the device can be easily adjusted in a wide range. A voltage is applied to a resistance adjusting unit, a reference resistance element, and a variable resistance element, which are serially connected, and is also applied to another variable resistance element, another reference resistance element, and another resistance adjusting unit, which are serially connected. When subjected to a magnetic field of a predetermined size, resistance values of the variable resistance elements change, and as a result, the potentials of output terminals change. Each of the resistance adjusting units includes serially connected parallel portions each including a plurality of parallel connected resistance elements. The resistance value of the resistance adjusting unit can be changed by bringing one of the parallel connected resistance elements into a non-conduction state.
摘要:
A magnetic detection device has stable characteristics having an area of a resist layer covering an insulating passivation layer, forming the magnetic detection element and a connection layer on a small stepped surface with high-precision, and preventing the resist layer from peeling, thereby providing a method of manufacturing the magnetic detection device. A resist layer 42 is overlapped through the insulating passivation layer 41 on an interconnection layer 35.
摘要:
A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W1 and an element length L1 perpendicular to the element width W1 and producing a magnetoresistive effect in which electrical resistance changes in response to an external magnetic field are arranged in an element-length direction with a space therebetween. An intermediate permanent magnet layer is disposed in the space, and the element units are connected to each other with the intermediate permanent magnet layer therebetween to form a connected-element body. A plurality of the connected-element bodies are arranged so as to be adjacent to one another in an element-width direction with a space therebetween, the ends of the connected-element bodies are connected to each other with an outer permanent magnet layer therebetween to form a magnetoresistive effect element having a meandering shape.
摘要:
In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers.